Two-Dimensional Electron Systems in AlAs Quantum Wells: Fabrication and Physics
Two-Dimensional Electron Systems in AlAs Quantum Wells: Fabrication and Physics
批准号:
0904117
负责人:
Mansour Shayegan
金额:
$61.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2009
资助国家:
美国
项目状态:
已结题
起止时间:
2009-08-15 至 2014-01-31
中文摘要
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英文摘要
****NON-TECHNICAL ABSTRACT****One of the most fascinating areas in solid-state physics concerns new states of matter that come about primarily because of the interaction between electrons. To explore such states, one needs specimens in which the imperfections, including impurities and crystal defects, are reduced to a minimum. This individual investigator award supports a project involving the fabrication of such samples, and measurements of their novel electronic properties. The emphasis is on two-dimensional electron systems in aluminum-arsenide quantum wells. These have parameters that are very different from the commonly studied gallium-arsenide samples. An understanding of the states and phenomena observed in the new samples not only will advance our knowledge of fundamental physics, but can also lead to novel device concepts. A major component of this research is the training and education of graduate and undergraduate students in critical areas of crystal growth, semiconductor sample processing, and electrical measurements. Well-trained students in this field will be invaluable resources for the US as well as the rest of the world.****TECHNICAL ABSTRACT****This individual investigator award supports a project to explore and elucidate electron interaction physics in high-quality, quantum-confined semiconductor structures. The program includes studies of fabrication, via the molecular beam epitaxy technique, and of electronic transport properties at low temperatures and high magnetic fields where electron correlation phenomena dominate. The emphasis of the work is on novel, high-quality two-dimensional electron systems (2DESs) confined to selectively-doped AlAs quantum wells; these 2DESs have parameters that are very different from those of the standard 2DESs in GaAs. Several problems, including the influence of the spin and valley degrees of freedom on the integer and fractional quantum Hall states will be investigated. Graduate and undergraduate students will be involved with these experimental research projects. The students will be trained in crucial areas of crystal growth, fabrication, and electrical measurements.
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Probing Exotic Phases of Ultra High Mobility Two-Dimensional Electrons
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批准号:2104771
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项目类别:Standard Grant
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资助金额:$68.0万
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财政年份:2021
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负责人:Mansour Shayegan
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依托单位:
Electronic spin and valley degrees of freedom - based novel quantum devices
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批准号:1906253
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项目类别:Standard Grant
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资助金额:$40.5万
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财政年份:2019
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负责人:Mansour Shayegan
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依托单位:
Probing Exotic Phases of Two-dimensional Electrons in Unconventional Systems
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批准号:1709076
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项目类别:Continuing Grant
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资助金额:$74.24万
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财政年份:2018
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负责人:Mansour Shayegan
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依托单位:
Toward Spin- and Valleytronic Devices
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批准号:1508925
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项目类别:Standard Grant
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资助金额:$40.5万
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财政年份:2015
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负责人:Mansour Shayegan
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依托单位:
Interacting Two-dimensional Electrons in Unconventional Systems
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批准号:1305691
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项目类别:Continuing Grant
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资助金额:$62.0万
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财政年份:2013
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负责人:Mansour Shayegan
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依托单位:
MRI: Acquisition of a Cryogen-free dilution refrigerator with a 12 T magnet
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批准号:1126061
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项目类别:Standard Grant
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资助金额:$43.6万
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财政年份:2011
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负责人:Mansour Shayegan
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依托单位:
Ballistic Transport in 2D Carrier Systems: Role of Spin and Valley Degrees of Freedom
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批准号:1001719
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2010
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负责人:Mansour Shayegan
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依托单位:
Spin Dependent Ballistic and Phase Coherent Transport in 2D Carrier Systems
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批准号:0701550
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2007
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Electron Systems in AlAs Quantum Wells
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批准号:0502477
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项目类别:Continuing Grant
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资助金额:$56.0万
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财政年份:2005
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负责人:Mansour Shayegan
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依托单位:
Ballistic Spin Transport in 2D Carrier Systems
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批准号:0400661
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项目类别:Standard Grant
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资助金额:$18.0万
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财政年份:2004
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负责人:Mansour Shayegan
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依托单位:
Two-dimensional Electrons in Modulation-Doped AlAs Quantum Wells
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批准号:0202016
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2002
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负责人:Mansour Shayegan
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依托单位:
Acquisition of Molecular Beam Epitaxy Equipment for Research and Education in High Quality GaAs Structures
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批准号:0113046
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
Quantum Hall Effect and Mesoscopic Physics
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批准号:0108024
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项目类别:Fellowship Award
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资助金额:$3.72万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
A Spin Interference Device
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批准号:0080458
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项目类别:Standard Grant
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资助金额:$24.0万
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财政年份:2000
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负责人:Mansour Shayegan
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依托单位:
Electron Transport in AlAs/GaAs Quasi Two-Dimensional Systems
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批准号:9971021
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:1999
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负责人:Mansour Shayegan
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依托单位:
Multicomponent Correlated Electron Systems: Fabrication andPhysics
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批准号:9623511
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项目类别:Continuing Grant
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资助金额:$33.87万
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财政年份:1996
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Low-Disorder Electron and Hole Systems
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批准号:9222418
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项目类别:Continuing Grant
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资助金额:$31.5万
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财政年份:1993
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负责人:Mansour Shayegan
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依托单位:
Engineering Research Equipment: Upgrading of Facilities for the Fabrication of GaAs/A1GaAs Heterostructures by MBE and Electron Beam Lithography
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批准号:9111897
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项目类别:Standard Grant
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资助金额:$3.02万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Electronic Properties of GaAs/AlGaAs Heterostructures with Atomically Precise Lateral Features
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批准号:9112740
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项目类别:Continuing Grant
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资助金额:$20.4万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Selectively-doped Gallium-Arsenide Heterojunction Thin-Film Structures: Fabrication & Physics
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批准号:8921073
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项目类别:Continuing Grant
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资助金额:$24.5万
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财政年份:1990
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负责人:Mansour Shayegan
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依托单位:
国内基金
海外基金
Scalable Learning and Optimization: High-dimensional Models and Online Decision-Making Strategies for Big Data Analysis
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批准号:--
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项目类别:合作创新研究团队
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资助金额:--
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批准年份:2024
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负责人:姚韬
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依托单位: