Fabrication and Physics of Electron Systems in AlAs Quantum Wells
Fabrication and Physics of Electron Systems in AlAs Quantum Wells
批准号:
0502477
负责人:
Mansour Shayegan
金额:
$56.0万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2005
资助国家:
美国
项目状态:
已结题
起止时间:
2005-05-01 至 2009-04-30
中文摘要
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英文摘要
An investigation of electron interaction physics in high-quality, quantum-confined semiconductor structures will be conducted. The program includes studies of both fabrication, via the molecular beam epitaxy technique, and of electronic transport properties at low temperatures and high magnetic fields where electron correlation phenomena dominate. The emphasis of the work is on novel, high-quality two-dimensional electron systems (2DESs) confined to selectively-doped AlAs quantum wells; these 2DESs have parameters that are very different from those of the standard 2DESs in GaAs. Several problems, including the influence of valley degeneracy on the integer and fractional quantum Hall states, and the role of the spin degree of freedom on transitions between the quantum Hall states will be studied. The project will be carried out by graduate and undergraduate students who will be trained in crucial areas of crystal growth, fabrication, and electrical measurements. The principal investigator and his group will take part in the K-12 teacher education programs at Princeton University and also present demonstrations at the Liberty Science Center. One of the most fascinating areas in solid state physics concerns new states of matter that come about primarily because of the interaction between the electrons. To explore such states, one needs specimens in which the imperfections, including impurities and crystal defects, are reduced to a minimum. This study involves the fabrication of such samples, and measurements of their novel electronic properties. The emphasis is on two-dimensional electron systems in aluminum-arsenide quantum wells. These have parameters that are very different from the commonly studied gallium-arsenide samples. An understanding of the states and phenomena observed in the new samples not only will advance our knowledge of fundamental physics, but can also lead to novel device concepts. A major component of this research is the training and education of graduate and undergraduate students in critical areas of crystal growth, semiconductor sample processing, and electrical measurements. Well-trained students in this field will be invaluable resources for the US as well as the rest of the world. The principal investigator and his group will take part in the K-12 teacher education programs at Princeton University and also present demonstrations at the Liberty Science Center.
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Probing Exotic Phases of Ultra High Mobility Two-Dimensional Electrons
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批准号:2104771
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项目类别:Standard Grant
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资助金额:$68.0万
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财政年份:2021
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负责人:Mansour Shayegan
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依托单位:
Electronic spin and valley degrees of freedom - based novel quantum devices
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批准号:1906253
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项目类别:Standard Grant
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资助金额:$40.5万
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财政年份:2019
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负责人:Mansour Shayegan
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依托单位:
Probing Exotic Phases of Two-dimensional Electrons in Unconventional Systems
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批准号:1709076
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项目类别:Continuing Grant
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资助金额:$74.24万
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财政年份:2018
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负责人:Mansour Shayegan
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依托单位:
Toward Spin- and Valleytronic Devices
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批准号:1508925
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项目类别:Standard Grant
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资助金额:$40.5万
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财政年份:2015
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负责人:Mansour Shayegan
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依托单位:
Interacting Two-dimensional Electrons in Unconventional Systems
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批准号:1305691
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项目类别:Continuing Grant
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资助金额:$62.0万
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财政年份:2013
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负责人:Mansour Shayegan
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依托单位:
MRI: Acquisition of a Cryogen-free dilution refrigerator with a 12 T magnet
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批准号:1126061
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项目类别:Standard Grant
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资助金额:$43.6万
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财政年份:2011
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负责人:Mansour Shayegan
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依托单位:
Ballistic Transport in 2D Carrier Systems: Role of Spin and Valley Degrees of Freedom
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批准号:1001719
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2010
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负责人:Mansour Shayegan
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依托单位:
Two-Dimensional Electron Systems in AlAs Quantum Wells: Fabrication and Physics
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批准号:0904117
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项目类别:Continuing Grant
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资助金额:$61.0万
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财政年份:2009
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负责人:Mansour Shayegan
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依托单位:
Spin Dependent Ballistic and Phase Coherent Transport in 2D Carrier Systems
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批准号:0701550
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2007
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负责人:Mansour Shayegan
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依托单位:
Ballistic Spin Transport in 2D Carrier Systems
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批准号:0400661
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项目类别:Standard Grant
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资助金额:$18.0万
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财政年份:2004
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负责人:Mansour Shayegan
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依托单位:
Two-dimensional Electrons in Modulation-Doped AlAs Quantum Wells
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批准号:0202016
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2002
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负责人:Mansour Shayegan
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依托单位:
Acquisition of Molecular Beam Epitaxy Equipment for Research and Education in High Quality GaAs Structures
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批准号:0113046
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
Quantum Hall Effect and Mesoscopic Physics
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批准号:0108024
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项目类别:Fellowship Award
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资助金额:$3.72万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
A Spin Interference Device
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批准号:0080458
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项目类别:Standard Grant
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资助金额:$24.0万
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财政年份:2000
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负责人:Mansour Shayegan
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依托单位:
Electron Transport in AlAs/GaAs Quasi Two-Dimensional Systems
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批准号:9971021
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:1999
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负责人:Mansour Shayegan
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依托单位:
Multicomponent Correlated Electron Systems: Fabrication andPhysics
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批准号:9623511
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项目类别:Continuing Grant
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资助金额:$33.87万
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财政年份:1996
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Low-Disorder Electron and Hole Systems
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批准号:9222418
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项目类别:Continuing Grant
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资助金额:$31.5万
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财政年份:1993
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负责人:Mansour Shayegan
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依托单位:
Engineering Research Equipment: Upgrading of Facilities for the Fabrication of GaAs/A1GaAs Heterostructures by MBE and Electron Beam Lithography
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批准号:9111897
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项目类别:Standard Grant
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资助金额:$3.02万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Electronic Properties of GaAs/AlGaAs Heterostructures with Atomically Precise Lateral Features
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批准号:9112740
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项目类别:Continuing Grant
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资助金额:$20.4万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Selectively-doped Gallium-Arsenide Heterojunction Thin-Film Structures: Fabrication & Physics
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批准号:8921073
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项目类别:Continuing Grant
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资助金额:$24.5万
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财政年份:1990
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负责人:Mansour Shayegan
-
依托单位:
国内基金
海外基金
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