Spin Dependent Ballistic and Phase Coherent Transport in 2D Carrier Systems
Spin Dependent Ballistic and Phase Coherent Transport in 2D Carrier Systems
批准号:
0701550
负责人:
Mansour Shayegan
金额:
$30.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2007
资助国家:
美国
项目状态:
已结题
起止时间:
2007-04-15 至 2010-03-31
中文摘要
本研究的目的是探索调制掺杂半导体中清洁二维(2D)载流子系统中的弹道自旋和谷输运。 该方法是制造和研究一些设备,可以证明注入,过滤和检测的自旋和/或谷电流。这些器件将基于两种不同的载体系统:(1)GaAs空穴,它具有强的和可调的自旋轨道相互作用;(2)AlAs电子,由于它们的有效g因子大,可以在适度的磁场下自旋极化。 该项目将有助于对半导体结构中的弹道和相位相干输运的基本理解。这些知识对于自旋电子学和量子计算等新兴领域的进步至关重要。它还可能导致不可预见的设备概念的发展。更广泛的影响: 该项目的影响将在科学界内外看到。研究结果将通过出版物和会议报告传达给专业以及一般的科学和工程界。 从长远来看,这一领域的进展将使社会受益,因为它可能导致新的电子设备和信息处理系统。重要的是,该项目包括一个高质量和全面的教育组成部分,并将导致在关键的、最先进的科学和技术领域培训学生,包括来自代表性不足群体的学生。外联活动将包括参与各种K-12教师培训计划,包括与本提案主题相关的电学和磁学一般领域。
英文摘要
The objective of this research is to explore ballistic spin and valley transport in clean, two-dimensional (2D) carrier systems in modulation-doped semiconductors. The approach is to fabricate and study a number of devices that can demonstrate the injection, filtering, and detection of spin and/or valley currents. The devices will be based on two different carrier systems: (1) GaAs holes which possess a strong and tunable spin-orbit interaction, and (2) AlAs electrons which, thanks to their large effective g-factor, can be spin-polarized with a modest magnetic field.Intellectual Merit: The project will contribute to the fundamental understanding of the ballistic and phase coherent transport in semiconductor structures. Such knowledge is essential for advancements in the emerging fields of spintronics and quantum computing. It can also lead to the development of unforeseen device concepts. Broader Impacts: The impact of the project will be seen in the scientific community and beyond. Results of the research will be communicated through publications and conference presentations to the specialized as well as general science and engineering communities. Progress in this area will benefit society in the long term as it may lead to novel electronic devices and information processing systems. Importantly, the project incorporates a high quality and comprehensive educational component and will result in the training of students, including those from underrepresented groups in critical, state-of-the art areas of science and technology. Outreach will include participation in various K-12 teacher training programs in electricity and magnetism, general areas that are linked to the topic of this proposal.
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会议论文
Probing Exotic Phases of Ultra High Mobility Two-Dimensional Electrons
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批准号:2104771
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项目类别:Standard Grant
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资助金额:$68.0万
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财政年份:2021
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负责人:Mansour Shayegan
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依托单位:
Electronic spin and valley degrees of freedom - based novel quantum devices
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批准号:1906253
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项目类别:Standard Grant
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资助金额:$40.5万
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财政年份:2019
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负责人:Mansour Shayegan
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依托单位:
Probing Exotic Phases of Two-dimensional Electrons in Unconventional Systems
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批准号:1709076
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项目类别:Continuing Grant
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资助金额:$74.24万
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财政年份:2018
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负责人:Mansour Shayegan
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依托单位:
Toward Spin- and Valleytronic Devices
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批准号:1508925
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项目类别:Standard Grant
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资助金额:$40.5万
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财政年份:2015
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负责人:Mansour Shayegan
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依托单位:
Interacting Two-dimensional Electrons in Unconventional Systems
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批准号:1305691
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项目类别:Continuing Grant
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资助金额:$62.0万
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财政年份:2013
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负责人:Mansour Shayegan
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依托单位:
MRI: Acquisition of a Cryogen-free dilution refrigerator with a 12 T magnet
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批准号:1126061
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项目类别:Standard Grant
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资助金额:$43.6万
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财政年份:2011
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负责人:Mansour Shayegan
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依托单位:
Ballistic Transport in 2D Carrier Systems: Role of Spin and Valley Degrees of Freedom
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批准号:1001719
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2010
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负责人:Mansour Shayegan
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依托单位:
Two-Dimensional Electron Systems in AlAs Quantum Wells: Fabrication and Physics
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批准号:0904117
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项目类别:Continuing Grant
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资助金额:$61.0万
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财政年份:2009
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Electron Systems in AlAs Quantum Wells
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批准号:0502477
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项目类别:Continuing Grant
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资助金额:$56.0万
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财政年份:2005
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负责人:Mansour Shayegan
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依托单位:
Ballistic Spin Transport in 2D Carrier Systems
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批准号:0400661
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项目类别:Standard Grant
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资助金额:$18.0万
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财政年份:2004
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负责人:Mansour Shayegan
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依托单位:
Two-dimensional Electrons in Modulation-Doped AlAs Quantum Wells
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批准号:0202016
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2002
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负责人:Mansour Shayegan
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依托单位:
Acquisition of Molecular Beam Epitaxy Equipment for Research and Education in High Quality GaAs Structures
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批准号:0113046
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
Quantum Hall Effect and Mesoscopic Physics
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批准号:0108024
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项目类别:Fellowship Award
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资助金额:$3.72万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
A Spin Interference Device
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批准号:0080458
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项目类别:Standard Grant
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资助金额:$24.0万
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财政年份:2000
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负责人:Mansour Shayegan
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依托单位:
Electron Transport in AlAs/GaAs Quasi Two-Dimensional Systems
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批准号:9971021
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:1999
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负责人:Mansour Shayegan
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依托单位:
Multicomponent Correlated Electron Systems: Fabrication andPhysics
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批准号:9623511
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项目类别:Continuing Grant
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资助金额:$33.87万
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财政年份:1996
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Low-Disorder Electron and Hole Systems
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批准号:9222418
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项目类别:Continuing Grant
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资助金额:$31.5万
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财政年份:1993
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负责人:Mansour Shayegan
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依托单位:
Engineering Research Equipment: Upgrading of Facilities for the Fabrication of GaAs/A1GaAs Heterostructures by MBE and Electron Beam Lithography
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批准号:9111897
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项目类别:Standard Grant
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资助金额:$3.02万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Electronic Properties of GaAs/AlGaAs Heterostructures with Atomically Precise Lateral Features
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批准号:9112740
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项目类别:Continuing Grant
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资助金额:$20.4万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Selectively-doped Gallium-Arsenide Heterojunction Thin-Film Structures: Fabrication & Physics
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批准号:8921073
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项目类别:Continuing Grant
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资助金额:$24.5万
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财政年份:1990
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负责人:Mansour Shayegan
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依托单位:
国内基金
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批准年份:2011
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