Ballistic Transport in 2D Carrier Systems: Role of Spin and Valley Degrees of Freedom
Ballistic Transport in 2D Carrier Systems: Role of Spin and Valley Degrees of Freedom
批准号:
1001719
负责人:
Mansour Shayegan
金额:
$36.0万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2010
资助国家:
美国
项目状态:
已结题
起止时间:
2010-06-15 至 2013-05-31
中文摘要
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英文摘要
Spintronics is an emerging area in solid state science and engineering. Its broad goal is to utilize carriers, spin to realize novel electronic devices that rely on the creation, manipulation, and detection of spin and spin-currents. If successful, such manipulation of spins could also impact the even more exotic field of quantum computing, as spin is the leading candidate for registering the quantum bit of information in the proposed quantum computers. The goal of this project is to explore ballistic transport in clean, two-dimensional carrier systems in modulation-doped semiconductors. The project includes the fabrication and study of a number of devices whose operation relies on the manipulation of spin and/or valley degrees of freedom. The devices will be based on two different carrier systems: (1) two-dimensional hole system in GaAs quantum wells which possesses a strong and tunable spin-orbit interaction, and (2) two-dimensional electron system in AlAs quantum wells where the electrons occupy conduction band valleys with tunable densities, and have a large Lande effective g-factor so that the electrons can be easily spin-polarized. The project will involve crystal growth of the basic materials via molecular beam epitaxy, fabrication of various devices using modern lithography techniques, and transport measurements.Intellectual merit: The project will contribute to the fundamental understanding of the ballistic transport in semiconductor structures. Such knowledge is essential for advancements in the emerging fields of spintronics and quantum computing. It can also lead to the development of unforeseen device concepts. Broader impacts: The impact of the project will be seen in the scientific community and beyond. Results of the research will be communicated through publications and conference presentations to the specialized as well as general science and engineering communities, where the topic is generating substantial interest. Progress in this area will also benefit society in the long term as it may lead to novel electronic devices and information processing systems.The project incorporates a high quality and comprehensive educational component. It will result in the education of students in critical, state-of-the art areas of science and technology, including the fabrication, characterization, and physics of high quality layered semiconductor structures. Well-trained students in these fields will be invaluable resources for the US as well as for the rest of the world. The PI will also make every effort to attract to this project students from underrepresented groups.The PI is committed to a broader education of the public in science and engineering. Some of the topics and results of this project will be incorporated into undergraduate and graduate courses that he teaches at Princeton University. The PI will also participate in various K-12 demonstrations and teacher training programs in electricity and magnetism, general areas that are closely linked to the topic of this proposal. These activities include training sessions, kit development, and demonstrations at regional school, and at Princeton University.
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MRI: Acquisition of a Cryogen-free dilution refrigerator with a 12 T magnet
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Two-Dimensional Electron Systems in AlAs Quantum Wells: Fabrication and Physics
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Spin Dependent Ballistic and Phase Coherent Transport in 2D Carrier Systems
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依托单位:
Fabrication and Physics of Electron Systems in AlAs Quantum Wells
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批准号:0502477
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资助金额:$56.0万
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依托单位:
Ballistic Spin Transport in 2D Carrier Systems
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资助金额:$18.0万
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财政年份:2004
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负责人:Mansour Shayegan
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依托单位:
Two-dimensional Electrons in Modulation-Doped AlAs Quantum Wells
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批准号:0202016
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资助金额:$42.0万
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财政年份:2002
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依托单位:
Acquisition of Molecular Beam Epitaxy Equipment for Research and Education in High Quality GaAs Structures
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Quantum Hall Effect and Mesoscopic Physics
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资助金额:$3.72万
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财政年份:2001
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依托单位:
A Spin Interference Device
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批准号:0080458
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资助金额:$24.0万
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财政年份:2000
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Electron Transport in AlAs/GaAs Quasi Two-Dimensional Systems
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财政年份:1999
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依托单位:
Multicomponent Correlated Electron Systems: Fabrication andPhysics
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财政年份:1996
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依托单位:
Fabrication and Physics of Low-Disorder Electron and Hole Systems
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资助金额:$31.5万
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财政年份:1993
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依托单位:
Engineering Research Equipment: Upgrading of Facilities for the Fabrication of GaAs/A1GaAs Heterostructures by MBE and Electron Beam Lithography
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财政年份:1991
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依托单位:
Fabrication and Electronic Properties of GaAs/AlGaAs Heterostructures with Atomically Precise Lateral Features
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Selectively-doped Gallium-Arsenide Heterojunction Thin-Film Structures: Fabrication & Physics
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财政年份:1990
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