Toward Spin- and Valleytronic Devices
Toward Spin- and Valleytronic Devices
批准号:
1508925
负责人:
Mansour Shayegan
金额:
$40.5万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2015
资助国家:
美国
项目状态:
已结题
起止时间:
2015-07-01 至 2019-06-30
中文摘要
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英文摘要
Spintronics and, more recently, valleytronics, are emerging areas in solid state science and engineering that utilizes carriers' spin/valley degrees of freedom to realize novel electronic devices that rely on the creation, manipulation, and detection of spin/valley currents. Such manipulation is expected to impact the field of quantum computing, as spin/valley are candidates for registering the quantum bit of information in quantum computers. The focus of the projects proposed here is to study ballistic transport in clean carrier systems in layered semiconductor structures. The goal is to demonstrate and characterize a number of electronic devices such as spin-interference device, spin-filter, and valley-filter, whose operation relies on the manipulation of spin and/or valley degrees of freedom. The project incorporates a comprehensive educational component, including graduate and undergraduate students training and curriculum development. Outreach activities involve developing demonstration kits for K-12 students in New Jersey schools, for public libraries and for teachers training programs at Princeton University. The main goal of the proposed projects is to demonstrate and characterize a number of electronic devices whose operation relies on the manipulation of spin and/or valley degrees of freedom. These include a spin-interference device, a spin-filter, and a valley-filter. The devices will be based mainly on two different carrier systems: (1) two-dimensional hole system in GaAs quantum wells which possesses a strong and tunable spin-orbit interaction, and (2) 2D electron system in AlAs quantum wells where the electrons occupy conduction band valleys with tunable densities, and also have a large Lande effective g-factor so that they can be easily spin-polarized. The projects will involve fabrication of various devices using modern crystal growth and lithography techniques, and transport measurements. The projects will contribute to the fundamental understanding of the ballistic transport in semiconductor structures. Such knowledge is essential for advancements in the emerging fields of spintronics and/or valleytronics and quantum computing.
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批准号:2104771
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项目类别:Standard Grant
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资助金额:$68.0万
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财政年份:2021
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负责人:Mansour Shayegan
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依托单位:
Electronic spin and valley degrees of freedom - based novel quantum devices
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批准号:1906253
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项目类别:Standard Grant
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资助金额:$40.5万
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Probing Exotic Phases of Two-dimensional Electrons in Unconventional Systems
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批准号:1709076
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资助金额:$74.24万
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财政年份:2018
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依托单位:
Interacting Two-dimensional Electrons in Unconventional Systems
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批准号:1305691
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项目类别:Continuing Grant
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资助金额:$62.0万
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财政年份:2013
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负责人:Mansour Shayegan
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依托单位:
MRI: Acquisition of a Cryogen-free dilution refrigerator with a 12 T magnet
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批准号:1126061
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项目类别:Standard Grant
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资助金额:$43.6万
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财政年份:2011
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负责人:Mansour Shayegan
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依托单位:
Ballistic Transport in 2D Carrier Systems: Role of Spin and Valley Degrees of Freedom
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批准号:1001719
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项目类别:Standard Grant
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资助金额:$36.0万
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财政年份:2010
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负责人:Mansour Shayegan
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依托单位:
Two-Dimensional Electron Systems in AlAs Quantum Wells: Fabrication and Physics
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批准号:0904117
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项目类别:Continuing Grant
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资助金额:$61.0万
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财政年份:2009
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负责人:Mansour Shayegan
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依托单位:
Spin Dependent Ballistic and Phase Coherent Transport in 2D Carrier Systems
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批准号:0701550
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项目类别:Standard Grant
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资助金额:$30.0万
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财政年份:2007
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Electron Systems in AlAs Quantum Wells
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批准号:0502477
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项目类别:Continuing Grant
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资助金额:$56.0万
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财政年份:2005
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负责人:Mansour Shayegan
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依托单位:
Ballistic Spin Transport in 2D Carrier Systems
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批准号:0400661
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项目类别:Standard Grant
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资助金额:$18.0万
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财政年份:2004
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负责人:Mansour Shayegan
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依托单位:
Two-dimensional Electrons in Modulation-Doped AlAs Quantum Wells
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批准号:0202016
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:2002
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负责人:Mansour Shayegan
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依托单位:
Acquisition of Molecular Beam Epitaxy Equipment for Research and Education in High Quality GaAs Structures
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批准号:0113046
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项目类别:Standard Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
Quantum Hall Effect and Mesoscopic Physics
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批准号:0108024
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项目类别:Fellowship Award
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资助金额:$3.72万
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财政年份:2001
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负责人:Mansour Shayegan
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依托单位:
A Spin Interference Device
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批准号:0080458
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项目类别:Standard Grant
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资助金额:$24.0万
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财政年份:2000
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负责人:Mansour Shayegan
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依托单位:
Electron Transport in AlAs/GaAs Quasi Two-Dimensional Systems
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批准号:9971021
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项目类别:Continuing Grant
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资助金额:$36.0万
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财政年份:1999
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负责人:Mansour Shayegan
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依托单位:
Multicomponent Correlated Electron Systems: Fabrication andPhysics
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批准号:9623511
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项目类别:Continuing Grant
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资助金额:$33.87万
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财政年份:1996
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Physics of Low-Disorder Electron and Hole Systems
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批准号:9222418
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项目类别:Continuing Grant
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资助金额:$31.5万
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财政年份:1993
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负责人:Mansour Shayegan
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依托单位:
Engineering Research Equipment: Upgrading of Facilities for the Fabrication of GaAs/A1GaAs Heterostructures by MBE and Electron Beam Lithography
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批准号:9111897
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项目类别:Standard Grant
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资助金额:$3.02万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Fabrication and Electronic Properties of GaAs/AlGaAs Heterostructures with Atomically Precise Lateral Features
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批准号:9112740
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项目类别:Continuing Grant
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资助金额:$20.4万
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财政年份:1991
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负责人:Mansour Shayegan
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依托单位:
Selectively-doped Gallium-Arsenide Heterojunction Thin-Film Structures: Fabrication & Physics
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批准号:8921073
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项目类别:Continuing Grant
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资助金额:$24.5万
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财政年份:1990
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负责人:Mansour Shayegan
-
依托单位:
国内基金
海外基金
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