3D Integrated 80Gb/s SiGe Heterojunction Bipolar Electroabsoprtion Modulator
3D Integrated 80Gb/s SiGe Heterojunction Bipolar Electroabsoprtion Modulator
批准号:
1128479
负责人:
Valencia Koomson
金额:
$10.15万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-08-15 至 2015-07-31
中文摘要
这项研究的目的是创造一种新型的基于硅的电吸收调制器(EAM),其工作带宽达到前所未有的80Gb/s。该方法是使用3D晶圆键合技术将光垂直耦合到纳米线高折射率对比度硅波导中。该调制器以梯度基极SiGe异质结晶体管为基准电结构,利用自由载流子等离子体效应产生光吸收调制。知识优势:对于高容量光纤系统,基于硅的单片集成快速EAM是商用III-V化合物半导体调制器的一种有吸引力的替代技术。本研究将探讨SiGe异质结晶体管中的载流子输运现象及其相应的光衰减效应,以及调制深度、信号色散、运算速度、功耗和局部加热效应之间的各种设计权衡。提出的工作将设计一个完全集成的调制器驱动电路,使用未经修改的硅制造工艺。更广泛的影响:80Gbps、低功耗、小占地的硅基EAM将是推动下一代宽带光纤网络和高速计算光波电路发展的突破性技术。有一个强大的,协同的教育和指导组成部分的学生在所有水平。拓展工作将扩大代表性不足的群体和本科生在两所大学研究项目中的参与。K-12外展活动将与RPI的纽约新视野项目合作,并通过塔夫茨大学的工程教育外展中心(CEEO)进行。
英文摘要
The objective of this research is to create a new class of Si-based electroabsorption modulators (EAM) that operate at an unprecedented bandwidth of 80Gb/s. The approach is to use 3D wafer bonding technology to vertically couple light into a nanowire high-index contrast silicon waveguide. A graded base SiGe heterojunction transistor is the baseline electric structure of the modulator, while the free carrier plasma effect is used to generate optical absorption modulation. Intellectual merits: For high capacity fiber-optic systems, a Si-based, monolithically integrated fast EAM is an appealing alternative technology to commercial III-V compound semiconductor based modulators. The proposed research will explore the carrier transport phenomena and its corresponding optical attenuation effect in a SiGe heterojuction transistor, as well as various design trade-offs among modulation depth, signal dispersion, operation speed, power consumption, and local heating effects. The proposed work will design a fully integrated modulator driver circuit using unmodified, silicon fabrication processes. Broader impacts: An 80Gbps, low-power, and small footprint Si based EAM will be a breakthrough technology in advancing the development of the next generation of broadband fiber-optic networking and lightwave circuits for high-speed computing. There is a strong, synergistic educational and mentoring component for students at all levels. Outreach efforts will broaden participation of under-represented groups and undergraduate students in research programs at both institutions. K-12 outreach activities will be in collaboration with New York New Vision program at RPI, and through the Center for Engineering Educational Outreach (CEEO) at Tufts.
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Workshop: 21st Annual on Interconnections within High-speed Digital Systems: Support for Student Participation. To be Held in Sante Fe, New Mexico on May 2-5, 2010.
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