3D Integrated 80Gb/s SiGe Heterojunction Bipolar Electroabsoprtion Modulator

3D 集成 80Gb/s SiGe 异质结双极电吸收调制器

• 批准号: 1128479
• 负责人: Valencia Koomson
• 金额: $ 10.15万
• 依托单位: Tufts University
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-08-15 至 2015-07-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1128479&HistoricalAwards=false
• 关键词: 3D; Integrated; 80Gb; SiGe; Heterojunction

The objective of this research is to create a new class of Si-based electroabsorption modulators (EAM) that operate at an unprecedented bandwidth of 80Gb/s. The approach is to use 3D wafer bonding technology to vertically couple light into a nanowire high-index contrast silicon waveguide. A graded base SiGe heterojunction transistor is the baseline electric structure of the modulator, while the free carrier plasma effect is used to generate optical absorption modulation. Intellectual merits: For high capacity fiber-optic systems, a Si-based, monolithically integrated fast EAM is an appealing alternative technology to commercial III-V compound semiconductor based modulators. The proposed research will explore the carrier transport phenomena and its corresponding optical attenuation effect in a SiGe heterojuction transistor, as well as various design trade-offs among modulation depth, signal dispersion, operation speed, power consumption, and local heating effects. The proposed work will design a fully integrated modulator driver circuit using unmodified, silicon fabrication processes. Broader impacts: An 80Gbps, low-power, and small footprint Si based EAM will be a breakthrough technology in advancing the development of the next generation of broadband fiber-optic networking and lightwave circuits for high-speed computing. There is a strong, synergistic educational and mentoring component for students at all levels. Outreach efforts will broaden participation of under-represented groups and undergraduate students in research programs at both institutions. K-12 outreach activities will be in collaboration with New York New Vision program at RPI, and through the Center for Engineering Educational Outreach (CEEO) at Tufts.

本研究的目的是创造一种新型的硅基电吸收调制器（EAM），其工作在前所未有的80 Gb/s的带宽。 该方法是使用3D晶片键合技术将光垂直耦合到纳米线高折射率对比度硅波导中。 该调制器的基本电学结构为渐变基区SiGe异质结晶体管，利用自由载流子等离子体效应产生光吸收调制。智力优点：对于高容量光纤系统，基于Si的单片集成快速EAM是商业III-V族化合物半导体基调制器的有吸引力的替代技术。拟议的研究将探讨载流子输运现象及其相应的光衰减效应在SiGe异质结晶体管，以及各种设计之间的权衡调制深度，信号色散，操作速度，功耗和局部加热效应。拟议的工作将设计一个完全集成的调制器驱动电路使用未经修改的，硅制造工艺。更广泛的影响：80 Gbps、低功耗、小尺寸的硅基EAM将是推动下一代宽带光纤网络和高速计算光波电路发展的突破性技术。有一个强大的，协同的教育和辅导的组成部分，为各级学生。外联工作将扩大代表性不足的群体和本科生在这两个机构的研究计划的参与。K-12外展活动将与RPI的纽约新视野计划合作，并通过塔夫茨的工程教育外展中心（CEEO）进行。