Monolayer Nucleation and Passivation of Advanced Electronic Materials

先进电子材料的单层成核和钝化

• 批准号: 1207213
• 负责人: Andrew Kummel
• 金额: $ 45.29万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-06-01 至 2017-05-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1207213&HistoricalAwards=false
• 关键词: Monolayer; Nucleation; Passivation; Advanced; Electronic

Technical Description: Atomic layer deposition is a cyclic chemical process that provides sub-nanometer control of layer thickness. The bonding of the first layer is the critical step in providing a low defect interface, which enables nucleation of atomic layer deposition within each unit cell. The project is developing an atomic layer understanding of oxide monolayers deposited on two very different semiconducting materials, gallium nitride and graphene, by combining scanning tunneling microscopy and scanning tunneling spectroscopy. These materials have surfaces with very low chemical reactivity, enabling the fabrication of unique electronics devices; however, these materials lack reactive atoms that can strongly bond to atomic layer deposition precursors. For graphene, the non-reactive surface is functionalized via adsorption of an ordered monolayer of organic coordination complexes while for gallium nitride and order layer of inorganic function groups are deposited. Two techniques are developed with broad applicability: (a) ultra high vacuum cross-sectional Kelvin Probe Force Microscopy to image the electrostatic potentials inside working capacitors and field effect transistors on the nanoscale and (b) contactless ultra high vacuum variable frequency capacitance-voltage for in-situ measurement of gate oxide defects.Non-technical Description: At present, computer chip speed and performance are limited by the dissipation of heat. Further increases in performance require decreasing in the supply voltage to stabilize heat dissipation per unit area. This research project seeks to develop the monolayer chemistry required for nucleating layer by layer growth of the nanoscale insulators, which will enable lower-power computing or more efficient high power communication. The project includes activities designed to recruit and support under-represented minority PhD students and undergraduate students who are interested in materials science and engineering or materials chemistry.

技术描述：原子层沉积是一种循环化学工艺，可对层厚度进行亚纳米级控制。第一层的键合是提供低缺陷界面的关键步骤，这使得在每个单位晶胞内的原子层沉积成核。该项目正在通过结合扫描隧道显微镜和扫描隧道光谱学，对沉积在两种非常不同的半导体材料氮化镓和石墨烯上的氧化物单层进行原子层理解。这些材料的表面具有非常低的化学反应性，使得能够制造独特的电子器件;然而，这些材料缺乏可以与原子层沉积前体强烈结合的反应性原子。对于石墨烯，非反应性表面通过有机配位络合物的有序单层的吸附而官能化，而对于氮化镓，沉积无机官能团的有序层。开发了两种具有广泛适用性的技术：（a）超高真空横截面开尔文探针力显微镜，用于在纳米级上对工作电容器和场效应晶体管内部的静电势进行成像;以及（B）非接触式超高真空变频电容电压，用于栅极氧化物缺陷的原位测量。目前，计算机芯片的速度和性能受到散热的限制。性能的进一步提高需要降低电源电压以稳定每单位面积的散热。该研究项目旨在开发纳米级绝缘体逐层生长所需的单层化学，这将实现低功耗计算或更高效的高功率通信。该项目包括旨在招募和支持代表性不足的少数民族博士生和对材料科学和工程或材料化学感兴趣的本科生的活动。