Monolayer Nucleation and Passivation of Advanced Electronic Materials
Monolayer Nucleation and Passivation of Advanced Electronic Materials
批准号:
1207213
负责人:
Andrew Kummel
金额:
$45.29万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-06-01 至 2017-05-31
中文摘要
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英文摘要
Technical Description: Atomic layer deposition is a cyclic chemical process that provides sub-nanometer control of layer thickness. The bonding of the first layer is the critical step in providing a low defect interface, which enables nucleation of atomic layer deposition within each unit cell. The project is developing an atomic layer understanding of oxide monolayers deposited on two very different semiconducting materials, gallium nitride and graphene, by combining scanning tunneling microscopy and scanning tunneling spectroscopy. These materials have surfaces with very low chemical reactivity, enabling the fabrication of unique electronics devices; however, these materials lack reactive atoms that can strongly bond to atomic layer deposition precursors. For graphene, the non-reactive surface is functionalized via adsorption of an ordered monolayer of organic coordination complexes while for gallium nitride and order layer of inorganic function groups are deposited. Two techniques are developed with broad applicability: (a) ultra high vacuum cross-sectional Kelvin Probe Force Microscopy to image the electrostatic potentials inside working capacitors and field effect transistors on the nanoscale and (b) contactless ultra high vacuum variable frequency capacitance-voltage for in-situ measurement of gate oxide defects.Non-technical Description: At present, computer chip speed and performance are limited by the dissipation of heat. Further increases in performance require decreasing in the supply voltage to stabilize heat dissipation per unit area. This research project seeks to develop the monolayer chemistry required for nucleating layer by layer growth of the nanoscale insulators, which will enable lower-power computing or more efficient high power communication. The project includes activities designed to recruit and support under-represented minority PhD students and undergraduate students who are interested in materials science and engineering or materials chemistry.
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会议论文
Chemical Dynamics of Gas Adsorption and Desorption on Organic Sensor Films
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批准号:0848502
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项目类别:Continuing Grant
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资助金额:$39.0万
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财政年份:2009
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负责人:Andrew Kummel
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依托单位:
Atomic and Electronic Structure at the ALD Oxide-Compound Semiconductor Interface
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批准号:0706243
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项目类别:Continuing Grant
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资助金额:$45.33万
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财政年份:2007
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负责人:Andrew Kummel
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依托单位:
Gas Reaction Dynamics on Layers of Metal Coordination Complexes
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批准号:0350571
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2004
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负责人:Andrew Kummel
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依托单位:
Acquisition of and Student Training for Low Temperature STM for Analysis/Fabrication of Single Site Defects
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批准号:0315794
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项目类别:Continuing Grant
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资助金额:$33.35万
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财政年份:2003
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负责人:Andrew Kummel
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依托单位:
ITR: Materials for InAs MOSFETs: The Enabling Transistor for Low Power, 100 GHz+ Information Transfer and Processing
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批准号:0312255
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2003
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负责人:Andrew Kummel
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依托单位:
Binding, Electronic Structure, and Growth of a Passive Interface: Ga203/GaAs(100)
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批准号:9985801
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项目类别:Continuing Grant
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资助金额:$53.78万
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财政年份:2000
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负责人:Andrew Kummel
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依托单位:
Energy Release, Chemical Selectivity, and Stereochemistry of Interhalogen Reactions with Low Work Function Surfaces
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批准号:0074813
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项目类别:Continuing Grant
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资助金额:$37.0万
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财政年份:2000
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负责人:Andrew Kummel
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依托单位:
Remote Dissociation of Halogens and Interhalogens onto Low Work Function Surfaces
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批准号:9700546
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项目类别:Continuing Grant
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资助金额:$42.0万
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财政年份:1997
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负责人:Andrew Kummel
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依托单位:
Halogen Passivation of GaAs (100)
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批准号:9527814
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项目类别:Standard Grant
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资助金额:$52.29万
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财政年份:1996
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负责人:Andrew Kummel
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依托单位:
Uniform Monolayer Pealing by Cyclic Etching of Gallium Arsenide (100) and Silicon (100) Surfaces
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批准号:9307259
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项目类别:Continuing Grant
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资助金额:$26.5万
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财政年份:1993
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负责人:Andrew Kummel
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依托单位:
The Effect of Molecular Orientation and Impact Parameter Upon Activated Associative Desorption and Chemisorption
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批准号:9200468
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项目类别:Continuing Grant
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资助金额:$26.65万
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财政年份:1992
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负责人:Andrew Kummel
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依托单位:
The Effect of Molecular Orientation Geometry Upon Associative Activated Desorption
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批准号:8813805
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项目类别:Continuing Grant
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资助金额:$27.36万
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财政年份:1989
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负责人:Andrew Kummel
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依托单位:
海外基金