Halogen Passivation of GaAs (100)

GaAs 的卤素钝化 (100)

• 批准号: 9527814
• 负责人: Andrew Kummel
• 金额: $ 52.29万
• 依托单位: University of California-San Diego
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1996
• 资助国家: 美国
• 起止时间: 1996-04-15 至 2000-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9527814&HistoricalAwards=false
• 关键词: Halogen; Passivation; GaAs; 100

9527814 Kummel This research project is an effort to understand basic halogen chemistry on GaAs, and the correlations between surface chemistry, structure and electronic properties. Additionally, the project includes an activity to apply the results of the chemical passivation study to device fabrication with development of a gate insulator of CaF2 or SrF2 and a halogen passivated, un-pinned GaAs surface. For basic passivation studies an atomic passivation layer will be formed by dosing of F2, Cl2, Br2, I2 with a differentially pumped MBE source and cycling the substrate temperature to remove arsenic halides or gallium polyhalide from the surface. Samples will be characterized in an STM chamber with XPS and STM used to detect the position of the Fermi level within the bandgap. %%% The knowledge and understanding gained from this research project is expected to contribute in a fundamental way to improving the performance of advanced compound semiconductor materials used in computing, information processing, and telecommunications by providing a fundamental understanding and a basis for designing and producing improved layered structures of materials required for advanced devices and circuits. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. ***

本研究项目旨在了解GaAs上卤素的基本化学性质，以及表面化学、结构和电子性质之间的关系。此外，该项目还包括一项将化学钝化研究结果应用于器件制造的活动，包括开发CaF2或SrF2栅极绝缘体和卤素钝化、非钉住的GaAs表面。对于基本的钝化研究，原子钝化层将通过用差泵浦MBE源注入F2， Cl2, Br2， I2并循环衬底温度从表面去除砷卤化物或多卤化镓来形成。样品将在STM室中进行表征，XPS和STM用于检测带隙内费米能级的位置。从本研究项目中获得的知识和理解有望为改进用于计算、信息处理和电信的先进化合物半导体材料的性能做出根本性的贡献，为设计和生产先进器件和电路所需的改进的材料层状结构提供基本的理解和基础。该计划的一个重要特点是通过培养学生在一个基础和技术上重要的领域的研究和教育的整合。＊＊＊