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Uniform Monolayer Pealing by Cyclic Etching of Gallium Arsenide (100) and Silicon (100) Surfaces

通过砷化镓 (100) 和硅 (100) 表面的循环蚀刻实现均匀单层剥离

基本信息

批准号：
9307259
负责人：
Andrew Kummel
金额：
$ 26.5万
依托单位：
University of California-San Diego
依托单位国家：
美国
项目类别：
Continuing Grant
财政年份：
1993
资助国家：
美国
起止时间：
1993-08-01 至 1997-07-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=9307259&HistoricalAwards=false
关键词：
Uniform Monolayer Pealing Cyclic Etching

项目摘要

9307259 Kummel This research addresses precise etching of GaAs(100) and Si(100) by an exact integral number of monolayers using saturation dosing of Cl2 followed by laser induced desorption. Molecular chlorine is required because it only absorbs to a coverage of one monolayer on these two surfaces. The critical qualities for the laser induced thermal desorption are (a) uniformity across the sample; (b) complete removal of all etching products; (c) restoration of the surface to a clean well-ordered state. These characteristics will be sought through the use of sequences of nanosecond laser pulses or single microsecond laser pulses rather than the conventional nanosecond single pulse technique. The monolayer peeling technique is critical to the development of quantum well devices because, if successful, it would allow etching to the exact interface between two thin semiconductor layers such as GaAs and AlGaAs. %%% The goal of this study is to devise a method of etching GaAs(100) and Si(100) at room temperature without surface damage and with an ultra-precise atomic level control over etch depth. This proposed technique of monolayer peeling is cyclic etching with chlorine and laser induced thermal desorption. The monolayer peeling technique is critical to the development of advanced electronic and photonic devices and integrated circuits using structures such as compound semiconductor quantum wells, because it would provide the basis for a critical fabrication process, etching to the exact interface between two ultra-thin semiconductor layers such as GaAs and AlGaAs.

小行星9307259 本研究解决了精确蚀刻GaAs（100）和Si（100）的一个精确的整数单层使用饱和剂量的Cl 2，然后用激光诱导解吸。需要分子氯，因为它只吸收这两个表面上的一个单层。激光诱导热脱附的关键品质是：（a）整个样品的均匀性;（B）完全去除所有蚀刻产物;（c）将表面恢复到干净有序的状态。这些特性将通过使用纳秒激光脉冲序列或单个微秒激光脉冲而不是传统的纳秒单脉冲技术来寻求。单层剥离技术对量子阱器件的发展至关重要，因为如果成功，它将允许蚀刻到两个薄半导体层（如GaAs和AlGaAs）之间的精确界面。本研究的目标是设计一种在室温下蚀刻GaAs（100）和Si（100）而不损伤表面并且在蚀刻深度上具有超精确原子级控制的方法。本文提出的单层剥离技术是用氯和激光诱导热脱附的循环蚀刻。单层剥离技术对于使用诸如化合物半导体量子威尔斯的结构的先进电子和光子器件以及集成电路的开发是至关重要的，因为它将为关键制造工艺提供基础，蚀刻到两个超薄半导体层（诸如GaAs和AlGaAs）之间的精确界面。