Remote Dissociation of Halogens and Interhalogens onto Low Work Function Surfaces

卤素和卤素间化合物在低功函数表面上的远程离解

基本信息

  • 批准号:
    9700546
  • 负责人:
  • 金额:
    $ 42万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    1997
  • 资助国家:
    美国
  • 起止时间:
    1997-03-01 至 2001-02-28
  • 项目状态:
    已结题

项目摘要

This research project, supported by the Analytical and Surface Chemistry Program, explores the interaction of halogen molecules with the well characterized Al(111) surface. It is particularly concerned with the abstractive dissociative adsorption which can occur with halogens, especially interhalogen molecules. Professor Kummel and his students at the University of California at San Diego will combine molecular beam scattering and scanning tunneling microscopy methods to probe the detailed dynamics of the interaction of these molecules, with a view to understanding the long range charge transfer process which accompanies dissociative adsorption. Oriented beam methods will also be used to probe the interaction of pendular states of the interhalogens with the low work function aluminum surface. An understanding of the dissociative adsorption of simple, high electron affinity molecules such as chlorine when interacting with low work function metals such as aluminum is the focus of this research project. Probing the dynamics of this interaction using scattering and surface microscopic methods will provide information about the mechanisms of these reactions, which are important in the processing of electronic materials, and in corrosion processes.
该研究项目由分析和表面化学计划支持,探索卤素分子与表征良好的Al(111)表面的相互作用。 它特别关注的是抽象的解离吸附,可以发生与卤素,特别是卤间分子。 教授 库梅尔和他在圣地亚哥的加州大学的学生们 将联合收割机分子束散射和扫描隧道 显微镜方法来探测这些分子的相互作用的详细动力学,以期了解伴随解离吸附的长程电荷转移过程。 定向束方法还将用于探测卤素间化合物的摆动态与低功函数铝表面的相互作用。 本研究项目的重点是了解简单的高电子亲和性分子(如氯)与低功函数金属(如铝)相互作用时的解离吸附。 使用散射和表面显微镜方法探测这种相互作用的动力学将提供有关这些反应机制的信息,这些反应在电子材料加工和腐蚀过程中非常重要。

项目成果

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Andrew Kummel其他文献

Andrew Kummel的其他文献

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{{ truncateString('Andrew Kummel', 18)}}的其他基金

Monolayer Nucleation and Passivation of Advanced Electronic Materials
先进电子材料的单层成核和钝化
  • 批准号:
    1207213
  • 财政年份:
    2012
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Chemical Dynamics of Gas Adsorption and Desorption on Organic Sensor Films
有机传感器薄膜上气体吸附和解吸的化学动力学
  • 批准号:
    0848502
  • 财政年份:
    2009
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Atomic and Electronic Structure at the ALD Oxide-Compound Semiconductor Interface
ALD 氧化物-化合物半导体界面的原子和电子结构
  • 批准号:
    0706243
  • 财政年份:
    2007
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Gas Reaction Dynamics on Layers of Metal Coordination Complexes
金属配位配合物层上的气体反应动力学
  • 批准号:
    0350571
  • 财政年份:
    2004
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Acquisition of and Student Training for Low Temperature STM for Analysis/Fabrication of Single Site Defects
用于单点缺陷分析/制造的低温 STM 的获取和学生培训
  • 批准号:
    0315794
  • 财政年份:
    2003
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
ITR: Materials for InAs MOSFETs: The Enabling Transistor for Low Power, 100 GHz+ Information Transfer and Processing
ITR:InAs MOSFET 材料:实现低功耗、100 GHz 信息传输和处理的晶体管
  • 批准号:
    0312255
  • 财政年份:
    2003
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Binding, Electronic Structure, and Growth of a Passive Interface: Ga203/GaAs(100)
被动界面的结合、电子结构和生长:Ga2O3/GaAs(100)
  • 批准号:
    9985801
  • 财政年份:
    2000
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Energy Release, Chemical Selectivity, and Stereochemistry of Interhalogen Reactions with Low Work Function Surfaces
低功函数表面卤素间反应的能量释放、化学选择性和立体化学
  • 批准号:
    0074813
  • 财政年份:
    2000
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant
Halogen Passivation of GaAs (100)
GaAs 的卤素钝化 (100)
  • 批准号:
    9527814
  • 财政年份:
    1996
  • 资助金额:
    $ 42万
  • 项目类别:
    Standard Grant
Uniform Monolayer Pealing by Cyclic Etching of Gallium Arsenide (100) and Silicon (100) Surfaces
通过砷化镓 (100) 和硅 (100) 表面的循环蚀刻实现均匀单层剥离
  • 批准号:
    9307259
  • 财政年份:
    1993
  • 资助金额:
    $ 42万
  • 项目类别:
    Continuing Grant

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