Acquisition of and Student Training for Low Temperature STM for Analysis/Fabrication of Single Site Defects

用于单点缺陷分析/制造的低温 STM 的获取和学生培训

基本信息

  • 批准号:
    0315794
  • 负责人:
  • 金额:
    $ 33.35万
  • 依托单位:
  • 依托单位国家:
    美国
  • 项目类别:
    Continuing Grant
  • 财政年份:
    2003
  • 资助国家:
    美国
  • 起止时间:
    2003-09-01 至 2006-08-31
  • 项目状态:
    已结题

项目摘要

This grant supports the purchase of a low temperature scanning tunneling microscope (STM) that will be used for investigations of defects and bonding sites in electronic and sensor materials. The low temperature STM provides a zero drift environment in which isolated molecules do not diffuse. In this quiet, stationary environment, the local electronic structure of single defects or bonding sites can be determined using current-voltage (dI/dV) measurements. The specific systems that will be studied with this instrument include: (a) defects at the semiconductor/gate oxide interface; (b) polysilole-based nanowire sensors; (c) halogen reactions with aluminum; (d) mixed, asymmetric metal phthalocyanine-based chemical sensors; and (e) fabrication of ordered arrays of single macromolecular assemblies. With the advent of commercial software (VASP) for calculating the electronic structures of molecules on surfaces, low temperature STM and STS studies can be directly compared to both simulated STM images and the partial density of states on single atoms. This comparison provides critical insights into the control of electronic structure on surfaces. This instrument will have impact on a broad audience at the university. (a) The San Diego Fellowship program for entering graduate students: UCSD is donating 3 months of support for 4 entering graduate students. These fellowships will be used to support graduate students to increase the diversity of the chemistry and physics graduate programs. (b) Undergraduate research: Undergraduate students will be involved in the proposed research via the Howard Hughes Undergraduate Enrichment Program (HHUEP) and the UCSD Office of Academic Enrichment. (c) UCSD-TV and webcasts: Lectures that are appropriate for high school and college students will be recorded for both broadcast and webcast by the UCSD-TV education outreach program. (d) Teacher training: The funds support one high school science teacher per summer to work in a research laboratory at UCSD. The teacher will have the opportunity to learn how to use the telemetry system developed at the UCSD National Center for Microscopy and Imaging Research (NCMIR). The NCMIR facilities house an electron microscope that can be remotely controlled via the web, enabling teachers and students to use the SEM directly from their classrooms. (e) Industrial collaborations: The low temperature STM will be used in collaborative research projects that focus on device and sensor development and involve Motorola, Microsense, and IBM.
该补助金支持购买一台低温扫描隧道显微镜(STM),用于电子和传感器材料中缺陷和粘合部位的调查。低温STM提供了一个零漂移的环境,其中孤立的分子不扩散。在这种安静、稳定的环境中,可以使用电流-电压(dI/dV)测量来确定单个缺陷或键合位点的局部电子结构。将使用该仪器研究的具体系统包括:(a)半导体/栅氧化物界面处的缺陷;(B)基于聚硅氧烷的纳米线传感器;(c)卤素与铝的反应;(d)基于混合、不对称金属酞菁的化学传感器;以及(e)制造单个大分子组件的有序阵列。随着用于计算表面分子电子结构的商业软件(VASP)的出现,低温STM和STS研究可以直接与模拟STM图像和单个原子上的部分态密度进行比较。这种比较提供了关键的见解控制表面上的电子结构。这一工具将对大学的广大听众产生影响。(a)圣地亚哥奖学金计划进入研究生:UCSD捐赠3个月的支持4进入研究生。这些奖学金将用于支持研究生增加化学和物理研究生课程的多样性。(b)本科研究:本科生将通过霍华德休斯本科丰富计划(HHUEP)和加州大学圣地亚哥分校学术丰富办公室参与拟议的研究。(c)UCSD-TV和网络广播:适合高中和大学生的讲座将被录制下来,由UCSD-TV教育推广计划进行广播和网络直播。(d)教师培训:该基金每年夏天支持一名高中科学教师在UCSD的研究实验室工作。教师将有机会学习如何使用UCSD国家显微镜和成像研究中心(NCMIR)开发的遥测系统。NCMIR设施内有一台电子显微镜,可以通过网络远程控制,使教师和学生能够直接从教室使用SEM。(e)工业合作:低温STM将用于合作研究项目,重点是设备和传感器开发,涉及摩托罗拉,Microsense和IBM。

项目成果

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Andrew Kummel其他文献

Andrew Kummel的其他文献

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{{ truncateString('Andrew Kummel', 18)}}的其他基金

Monolayer Nucleation and Passivation of Advanced Electronic Materials
先进电子材料的单层成核和钝化
  • 批准号:
    1207213
  • 财政年份:
    2012
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant
Chemical Dynamics of Gas Adsorption and Desorption on Organic Sensor Films
有机传感器薄膜上气体吸附和解吸的化学动力学
  • 批准号:
    0848502
  • 财政年份:
    2009
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant
Atomic and Electronic Structure at the ALD Oxide-Compound Semiconductor Interface
ALD 氧化物-化合物半导体界面的原子和电子结构
  • 批准号:
    0706243
  • 财政年份:
    2007
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant
Gas Reaction Dynamics on Layers of Metal Coordination Complexes
金属配位配合物层上的气体反应动力学
  • 批准号:
    0350571
  • 财政年份:
    2004
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant
ITR: Materials for InAs MOSFETs: The Enabling Transistor for Low Power, 100 GHz+ Information Transfer and Processing
ITR:InAs MOSFET 材料:实现低功耗、100 GHz 信息传输和处理的晶体管
  • 批准号:
    0312255
  • 财政年份:
    2003
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant
Binding, Electronic Structure, and Growth of a Passive Interface: Ga203/GaAs(100)
被动界面的结合、电子结构和生长:Ga2O3/GaAs(100)
  • 批准号:
    9985801
  • 财政年份:
    2000
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant
Energy Release, Chemical Selectivity, and Stereochemistry of Interhalogen Reactions with Low Work Function Surfaces
低功函数表面卤素间反应的能量释放、化学选择性和立体化学
  • 批准号:
    0074813
  • 财政年份:
    2000
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant
Remote Dissociation of Halogens and Interhalogens onto Low Work Function Surfaces
卤素和卤素间化合物在低功函数表面上的远程离解
  • 批准号:
    9700546
  • 财政年份:
    1997
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant
Halogen Passivation of GaAs (100)
GaAs 的卤素钝化 (100)
  • 批准号:
    9527814
  • 财政年份:
    1996
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Standard Grant
Uniform Monolayer Pealing by Cyclic Etching of Gallium Arsenide (100) and Silicon (100) Surfaces
通过砷化镓 (100) 和硅 (100) 表面的循环蚀刻实现均匀单层剥离
  • 批准号:
    9307259
  • 财政年份:
    1993
  • 资助金额:
    $ 33.35万
  • 项目类别:
    Continuing Grant

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