Nanoelectronic Material Characterization using Single Electron Transistors
Nanoelectronic Material Characterization using Single Electron Transistors
批准号:
1207394
负责人:
Alexei Orlov
金额:
$46.5万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2012
资助国家:
美国
项目状态:
已结题
起止时间:
2012-06-01 至 2016-05-31
中文摘要
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英文摘要
Technical Description: With the shrinking of electronics towards the nanometer scale, just a few misplaced dopants can cause significant variability in the performance of electronic devices. Therefore, the development of an ability to accurately map vacancies, defects, dopant atoms, and interface structures becomes urgent to enable future generations of electronic devices. To achieve these goals, this project develops methods for detailed investigation of charged defects in electronics-relevant materials. The approach is to integrate novel electronic materials with single-electron transistor structures so that the native imperfections in the materials and fabrication-induced defects are directly detectable through evaluation of the single-electron transistor's characteristics. Both low-frequency testing methods (e.g., conductance mapping) and high- frequency techniques (e.g., microwave reflectometry) are used to provide detailed characterization of charged defects in the barrier materials over a broad frequency range. The project aims to contribute to the detailed understanding of the interfaces and dielectric materials used in charge-based electronic devices.Non-technical Description: This project investigates new methods to characterize materials used in mainstream silicon electronics and emerging nanoelectronic devices by using single electron transistors, which are charge-sensing devices that can detect the motion of extremely small amounts of electrical charge in their vicinity. The research project is expected to contribute to the further development of novel electronic materials and to enhance understanding of electronically active interfaces between materials at the nanometer scale. The educational activities associated with this project include the development of educational and training opportunities for graduate and undergraduate students in an interdisciplinary environment as well as for diversity and minority recruiting. An outreach program with a local high school, established previously by PIs, continues to introduce high-school teachers and students to engineering and for them to conduct research at the University of Notre Dame in an atmosphere of maximum inclusivity.
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Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
隧道势垒原子层沉积纳米镶嵌金属单电子晶体管的制备
DOI:
10.1116/1.4932156
发表时间:
2015
期刊:
and Phenomena
影响因子:
--
作者:
[Karbasian, Golnaz, Orlov, Alexei O., Snider, Gregory L.]
通讯作者:
Snider, Gregory L.
DOI:
10.1063/1.4883228
发表时间:
2014-06
期刊:
Applied Physics Letters
影响因子:
4
作者:
[B. Villis;A. Orlov;S. Barraud;M. Vinet;M. Sanquer;P. Fay;G. Snider;X. Jehl]
通讯作者:
B. Villis;A. Orlov;S. Barraud;M. Vinet;M. Sanquer;P. Fay;G. Snider;X. Jehl
Experimental demonstration of single electron transistors featuring SiO2 plasma-enhanced atomic layer deposition in Ni-SiO2-Ni tunnel junctions
Ni-SiO2-Ni 隧道结中 SiO2 等离子体增强原子层沉积单电子晶体管的实验演示
DOI:
10.1116/1.4935960
发表时间:
2016
期刊:
and Films
影响因子:
--
作者:
[Karbasian, Golnaz, McConnell, Michael S., Orlov, Alexei O., Rouvimov, Sergei, Snider, Gregory L.]
通讯作者:
Snider, Gregory L.
Dual-Port Reflectometry Technique: Charge identification in nanoscaled single-electron transistors.
双端口反射技术:纳米级单电子晶体管中的电荷识别。
DOI:
10.1109/mnano.2015.2409411
发表时间:
2015
期刊:
IEEE Nanotechnology Magazine
影响因子:
1.6
作者:
[Orlov, Alexei O., Fay, Patrick, Snider, Gregory L., Jehl, Xavier, Barraud, Sylvain, Sanquer, Marc]
通讯作者:
Sanquer, Marc
Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
采用原子层沉积制备的氮化硅隧道势垒单电子晶体管
DOI:
10.1109/ulis.2016.7440045
发表时间:
2016
期刊:
Single-electron transistors featuring silicon nitride tunnel barriers prepared by atomic layer deposition
影响因子:
--
作者:
[Karbasian, Golnaz, Orlov, Alexei O., Mukasyan, Alexander S., Snider, Gregory L.]
通讯作者:
Snider, Gregory L.
共 6 条
海外基金