SHF: SMALL: GOALI: Design for Manufacturability in Extreme Scaling with Emerging Nanolithography

SHF：小型：GOALI：利用新兴纳米光刻技术实现极限缩放的可制造性设计

• 批准号: 1218906
• 负责人: David Pan
• 金额: $ 36万
• 依托单位: University of Texas at Austin
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-07-01 至 2017-06-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1218906&HistoricalAwards=false
• 关键词: SHF; SMALL; GOALI; Design; Manufacturability

Advancing lithography patterning, which enables feature size scaling, has been a holy grail for the semiconductor industry. There are several leading nanolithography technologies for 14nm, 11nm, 7nm and 1x nm for extreme scaling, including multiple patterning lithography (MPL), extreme ultraviolet lithography (EUVL) and e-beam lithography (EBL). This project aims at developing novel design for manufacturability algorithms, tools, and methodologies for nanometer integrated circuits (IC) manufactured through these emerging nanolithography technologies. The proposed research will synergistically link nanolithography process modeling/abstraction with multi-scale layout optimization. For MPL, robust and scalable multi-objective layout decomposition algorithms and MPL-aware physical design tools will be developed. For next-generation nanolithography such as EUVL and EBL, new design and process integration issues will be studied. Hybrid nanolithography (e.g., combining MPL with EBL) will also be explored to shed light on ultimate nano-patterning for future IC layout design. The proposed solutions will span multiple technology layers and bring together experts from both academia and industry.This proposed project addresses fundamental challenges to bridge the gap between IC design and manufacturing in extreme scaling. Thus its potential impacts to the semiconductor industry and associated information and high-tech industries cannot be overstated. The academia-industry collaboration between University of Texas and IBM promises innovative and high-risk academia research coupled with realistic industry data/benchmarks and timely technology transfer through IBM and its global partners to benefit the overall industry. The highly interdisciplinary nature of this research will be tightly integrated into a variety of curriculum development and diverse student mentoring programs.

推进光刻图案化，实现特征尺寸缩放，一直是半导体行业的圣杯。 有几种领先的纳米光刻技术可用于 14nm、11nm、7nm 和 1x nm 的极端缩放，包括多重图案光刻 (MPL)、极紫外光刻 (EUVL) 和电子束光刻 (EBL)。该项目旨在为通过这些新兴纳米光刻技术制造的纳米集成电路（IC）开发可制造性算法、工具和方法的新颖设计。所提出的研究将协同地将纳米光刻工艺建模/抽象与多尺度布局优化联系起来。对于 MPL，将开发稳健且可扩展的多目标布局分解算法和 MPL 感知的物理设计工具。 对于EUVL和EBL等下一代纳米光刻技术，将研究新的设计和工艺集成问题。混合纳米光刻（例如，将 MPL 与 EBL 相结合）也将被探索，以揭示未来 IC 布局设计的最终纳米图案。拟议的解决方案将跨越多个技术层，并汇集学术界和工业界的专家。该拟议项目解决了缩小 IC 设计和制造之间差距的根本挑战。因此，它对半导体行业以及相关信息和高科技行业的潜在影响怎么强调也不为过。德克萨斯大学和 IBM 之间的学术界与工业界合作承诺通过 IBM 及其全球合作伙伴进行创新和高风险的学术研究，结合现实的行业数据/基准以及及时的技术转让，以使整个行业受益。这项研究的高度跨学科性质将紧密整合到各种课程开发和多样化的学生指导计划中。