I-Corps: High Density Memristive Devices for Non-Volatile Memory Applications

I-Corps：用于非易失性存储器应用的高密度忆阻器件

• 批准号: 1242417
• 负责人: Rashmi Jha
• 金额: $ 5万
• 依托单位: University of Toledo
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2012
• 资助国家: 美国
• 起止时间: 2012-07-01 至 2013-12-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1242417&HistoricalAwards=false
• 关键词: Corps; Density; Memristive; Devices; Non

The objective of this proposal is to develop high-density, low-power, and low-cost memristive/Resistive Random Access Memory (ReRAM) devices for Non-Volatile Memory (NVM) market. The memristive/ReRAM devices are identified on the semiconductor roadmap as a leading potential replacement for the present flash memories and an enabling technology for Terabytes/cm2 data "storage on chip" almost 3 orders of magnitude denser than the current technology. However, the major challenges to commercialization remain in addressing critical issues including: (i) electroforming, (ii) tight control of compliance current, (iii) reducing switching energy, (iv) device-to-device variability, (v) endurance and cycle-to-cycle variability, and (vi) demonstration of 1Diode 1ReRAM (1D1R) crossbar structures. This gap in knowledge persists due to a lack of fundamental understanding on switching and charge transport mechanism in these devices. The fundamental studies through previous NSF-funded research in this area led the team to a potential solution that addresses these challenges. The current market for NVM is around 26 billion USD and is projected to grow at 14% annually, reaching 51.2 billion USD by 2015. These NVM devices are becoming increasingly important for massive data storage in smart-phone, tablets, notebooks, digital cameras, video recording, and thumb-drives. The current NAND-flash technology will be unable to meet this demand due to fundamental scaling limits. The proposed innovation will provide high-density, low-power memristive/ReRAM devices based memories with additional performance benefits of fast write/erase/read times, endurance of 105 cycles, and 10 years of retention. These devices demonstrate Multi-Level Cell (MLC) storage that will provide an attractive solution for low-cost per bit storage. The demonstration of 1kb memory in 1D1R configuration will significantly enhance the scientific and technological understanding and will have significant impact on developing high-density memory by 3-D stacking. If successful, this will have a direct impact on economic development and job creation in Northwest Ohio and help maintain the US leadership in this emerging technology.

该提案的目标是为非易失性存储器（NVM）市场开发高密度、低功耗和低成本的记忆/电阻随机存取存储器（ReRAM）设备。记忆体/ReRAM器件在半导体路线图上被确定为当前闪存的主要潜在替代品，并且是一种使能技术，可以实现兆兆字节/平方厘米的数据“芯片存储”，几乎比当前技术密度高3个数量级。然而，商业化的主要挑战仍然是解决关键问题，包括：(i)电铸，（ii）严格控制合规电流，（iii）减少开关能量，（iv）设备间的可变性，(v)耐用性和周期间的可变性，以及（vi） 1Diode 1ReRAM （1D1R）交叉杆结构的演示。由于对这些器件的开关和电荷输运机制缺乏基本的了解，这种知识差距仍然存在。通过之前nsf在该领域资助的基础研究，该团队找到了解决这些挑战的潜在解决方案。目前NVM的市场规模约为260亿美元，预计将以每年14%的速度增长，到2015年将达到512亿美元。这些NVM设备对于智能手机、平板电脑、笔记本电脑、数码相机、视频录制和拇指驱动器中的海量数据存储变得越来越重要。由于基本的规模限制，目前的nand闪存技术将无法满足这一需求。提出的创新将提供高密度、低功耗的基于记忆/ReRAM器件的存储器，具有快速写入/擦除/读取时间、105周期的耐用性和10年的保留时间等额外的性能优势。这些设备展示了多级单元（MLC）存储，将为低成本的每比特存储提供一个有吸引力的解决方案。1kb内存1D1R配置的演示将显著增强科学和技术的认识，并将对通过3d堆叠开发高密度内存产生重大影响。如果成功，这将对俄亥俄州西北部的经济发展和就业创造产生直接影响，并有助于保持美国在这一新兴技术方面的领导地位。