Collaborative Research: Mechanisms and Processing Strategies for Sn Whisker Mitigation
Collaborative Research: Mechanisms and Processing Strategies for Sn Whisker Mitigation
批准号:
1335491
负责人:
Indranath Dutta
金额:
$28.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2013
资助国家:
美国
项目状态:
已结题
起止时间:
2013-09-01 至 2018-08-31
中文摘要
锡晶须在细间距镀锡电互连线上的生长在无铅电子元件中造成灾难性的短路问题。在过去,这个问题通过添加百分之几的铅来缓解,由于世界范围内禁止铅,这不再被允许。本研究的目的是通过两种不同的机制来开发用于减轻锡晶须生长的稳健策略。提出的一种途径是通过在电镀浴中添加掺杂剂来改变电镀化学,以模拟使铅能够赋予锡晶须生长抗性的机制。另一个是修改沉积条件,以促进近等轴晶粒结构,而不是通常普遍的柱状晶粒,允许吸收质量流而不生长晶须。为了实现这一目标,该项目将整合合金设计/微观结构的智能组件与可交付的制造组件。为了帮助合金设计,将进行分子动力学(MD)模拟,以深入了解掺杂元素对锡中晶界能和扩散率的影响。本研究的预期成果将是降低镀锡过程中的应力,以及深入了解晶须形成的关键机制,包括工艺条件对晶须尺寸和密度的影响。如果成功,本文提出的工艺技术将对电子制造业产生重大影响。这些结果将特别适用于电力、航天和军事电子行业,这些行业的寿命以数十年为单位,使得晶须形成成为一个严重的问题。这项工作将通过促进发现、与行业互动、在会议上传播成果以及指导本科生和高中生,将新墨西哥州理工大学和华盛顿州立大学的研究和研究生培训结合起来。它将为学生提供工业相关技术的实践经验,其中材料加工,微观结构,力学和热力学都在一个具有世界影响力的单一问题中联系在一起。
英文摘要
The growth of tin whiskers on fine pitched tin-plated electrical interconnect lines poses catastrophic short circuit problems in lead-free electronic components. In the past, this problem was mitigated by adding a few percent lead, which is no longer permissible due to a world-wide ban on lead. This research is aimed at developing robust strategies for mitigating tin-whisker growth by two different mechanisms. One path proposed is to alter the plating chemistry by adding dopants in the electroplating bath to emulate mechanisms that enable lead to impart whisker growth resistance to tin. Another is to modify deposition conditions to promote a near-equiaxed grain structure instead of typically prevalent columnar grains, allowing absorption of mass flow without whisker growth. To achieve this, the project will integrate an intellectual component of alloy-design/microstructure with a deliverable manufacturing component. To aid alloy-design, molecular dynamics (MD) simulations will be performed to provide insight into the influence of dopant elements on grain boundary energy and diffusivity in tin. The expected outcomes will be stress reduction in the tin plating as well as insight into the key mechanisms of whisker formation, including the impact of process conditions on the size and density of whiskers produced.If successful, the process technology proposed here will have significant impact on the electronics manufacturing industry. The results will be particularly relevant for the power, space and military electronics industries, where lifetimes are measured in decades making whisker formation an egregious problem. The work will integrate research and graduate student training at New Mexico Tech and Washington State University by fostering discovery, interactions with the industry, dissemination of results in conferences, as well as mentoring of undergraduate and high school students. It will provide students with hands-on experience in an industrially relevant technology, where materials processing, microstructure, mechanics, and thermodynamics are all tied together in a single problem of world-wide impact.
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会议论文
Influence of Electric Field and Stress on Diffusional Sliding at Hetero-Interfaces
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批准号:1309843
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项目类别:Continuing Grant
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资助金额:$39.6万
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财政年份:2013
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负责人:Indranath Dutta
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依托单位:
Collaborative Research: Electromagnetic Pulse Cutting of Metallic Components
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批准号:1232458
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项目类别:Standard Grant
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资助金额:$17.65万
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财政年份:2012
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负责人:Indranath Dutta
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A Breakthrough Nanolithography Technique Using 'Electro-Fountain Pens'
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批准号:1100900
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项目类别:Standard Grant
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资助金额:$28.5万
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财政年份:2011
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负责人:Indranath Dutta
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依托单位:
EAGER/Collaborative Research: Electromagnetic Pulse Induced Cutting (EPIC) of Metallic Components
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批准号:1103199
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项目类别:Standard Grant
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资助金额:$5.0万
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财政年份:2011
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负责人:Indranath Dutta
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依托单位:
EAGER: Fracture of Microelectronic Lead Free Solder Joints under Dynamic Loading Conditions
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批准号:0939392
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项目类别:Continuing Grant
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资助金额:$22.66万
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财政年份:2009
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负责人:Indranath Dutta
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依托单位:
GOALI: Effects of Processing and Microstructure on the Fracture Properties of Microelectronic Lead Free Solder Joints under Dynamic Loading Conditions
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批准号:0705734
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项目类别:Interagency Agreement
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资助金额:$26.07万
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财政年份:2007
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负责人:Indranath Dutta
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依托单位:
Interfacial Creep in Thin Film Interconnect Structures in Micro-Systems
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批准号:0513874
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项目类别:Continuing Grant
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资助金额:$40.07万
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财政年份:2005
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负责人:Indranath Dutta
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依托单位:
GOALI: Creep and Microstructural Coarsening of Lead-Free Solders in Micro-Electronic Packaging Applications
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批准号:0209464
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项目类别:Interagency Agreement
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资助金额:$25.22万
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财政年份:2002
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负责人:Indranath Dutta
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依托单位:
Interfacial Creep in Multi-Component Materials Systems
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批准号:0075281
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项目类别:Interagency Agreement
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资助金额:$13.91万
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财政年份:2000
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负责人:Indranath Dutta
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依托单位:
An Analytical and Experimental Study of Longitudinal Creep in Countinous Fiber Composites
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批准号:9423668
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项目类别:Standard Grant
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资助金额:$13.91万
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财政年份:1995
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负责人:Indranath Dutta
-
依托单位:
国内基金
海外基金
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