CSR: Small: Collaborative Research: Cross-Layer Design Techniques for Robustness of the Next-Generation Nonvolatile Memories

CSR：小型：协作研究：下一代非易失性存储器鲁棒性的跨层设计技术

• 批准号: 1342566
• 负责人: Hai Li
• 金额: $ 19.2万
• 依托单位: University of Pittsburgh
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2013
• 资助国家: 美国
• 起止时间: 2013-02-01 至 2015-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1342566&HistoricalAwards=false
• 关键词: CSR; Small; Collaborative; Research; Cross

The objective of the research is to develop design technologies that can alleviate the general robustness issues of the next-generation nonvolatile memories while maintaining and even improving the generic memory specifications such as density, power and performance. Comprehensive solutions are integrated from architecture, circuit and device layers for the improvement on the density, cost and reliability of emerging nonvolatile memories. The design techniques include 1) a new write endurance improvement technique for multi-level cell devices to prolong the lifetime of the new nonvolatile memories by applying the coding and wear-leveling techniques that are monitored and controlled by self-contained circuits; 2) self-reference and other adaptive sensing techniques to overcome the impacts of process variations and device wear-out mechanisms for yield improvement.; and 3) a new interleaved 3D-stacking memory integration scheme and peripheral circuit design to increase the number of stacks integrated within a certain height. The broader impact of the research lies in revealing the importance of applying cross-layer design techniques to resolve the robustness issues of the next-generation NVMs and the attentions to the robust design context. The system architects, the circuit designers and the device integration engineers can be well bridged and educated by the research innovations. The developed techniques can be directly transferred to industry applications under the close collaborations with several industry partners, and directly impact the future computing systems. The activities in the collaboration also include the tutorials in the major conferences on the technical aspects of the projects and new course development.

研究的目的是开发设计技术，可以减轻下一代非易失性存储器的一般鲁棒性问题，同时保持甚至提高通用存储器的规格，如密度，功率和性能。从架构、电路和器件层集成了全面的解决方案，以提高新兴非易失性存储器的密度、成本和可靠性。该设计技术包括：1）一种新的用于多级单元器件的写耐久性改进技术，通过应用由自包含电路监视和控制的编码和损耗均衡技术来延长新的非易失性存储器的寿命; 2）自参考和其他自适应感测技术，以克服工艺变化和器件损耗机制的影响，从而提高成品率。以及3）新的交错3D堆叠存储器集成方案和外围电路设计，以增加在一定高度内集成的堆叠的数量。该研究的更广泛的影响在于揭示了应用跨层设计技术来解决下一代NVM的鲁棒性问题的重要性以及对鲁棒设计上下文的关注。研究创新可以很好地沟通和教育系统架构师、电路设计师和器件集成工程师。在与多个行业合作伙伴的密切合作下，开发的技术可以直接转移到行业应用中，并直接影响未来的计算系统。合作的活动还包括在主要会议上就项目的技术方面和新课程开发提供辅导。