CAREER: Opportunistic Through-Silicon-Via Utilization: Device, Circuit and Design Automation Perspectives

职业：机会性硅通孔利用：器件、电路和设计自动化视角

• 批准号: 1559026
• 负责人: Yiyu Shi
• 金额: $ 37.56万
• 依托单位: University of Notre Dame
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2015
• 资助国家: 美国
• 起止时间: 2015-09-01 至 2019-02-28
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1559026&HistoricalAwards=false
• 关键词: CAREER; Opportunistic; Through; Silicon; Via

The three-dimensional integrated circuit (3D IC) stacks multiple dies in the vertical dimension using Through-Silicon-Vias (TSVs), which results in significantly reduced footprint, power and latency. While many challenges still exist related to 3D ICs, this project targets the one challenge that will become increasingly important in the next 5 to 10 years and may potentially end the production of 3D ICs: TSVs are quite large in size, yet their diameters do not scale with the devices due to the limitations of wafer handling and aspect ratios. On the other hand, a large number of TSVs are needed to deliver signal and power, to dissipate heat, and to provide redundancy. Moreover, foundries impose a minimum TSV density rule to maintain the planarity of the wafer during chemical and mechanical polishing (CMP). This project tackles the challenge by reconfiguring idle TSVs as devices for various circuits and systems. An opportunistic computer-aided design (CAD) framework will also be put forward for optimum utilization of the TSV devices. The proposed research will pioneer a new and transformative direction for the advancement of 3D ICs at all the design levels - devices, circuits and CAD - with no change required in current semiconductor processes. The PI will also leverage the collaboration with Industrial Technology Research Institute to set up an extensive international internship program for U.S. undergraduates and graduates, which will benefit the general 3D IC research community. In addition, the PI will develop various activities for undergraduates and underrepresented minorities within the research framework, full-filled 3D Tetris contests for Rolla local high school students, and a web 2.0-based 3D forum for collaborative research in the 3D IC community.

三维集成电路（3D IC）使用硅通孔（TSV）在垂直维度上堆叠多个管芯，这导致显著减小的占用面积、功率和延迟。虽然3D IC仍存在许多挑战，但该项目针对的是未来5至10年将变得越来越重要并可能终止3D IC生产的一个挑战：TSV尺寸相当大，但由于晶圆处理和纵横比的限制，它们的直径与器件不成比例。另一方面，需要大量TSV来传递信号和功率、散热以及提供冗余。此外，代工厂施加最小TSV密度规则以在化学和机械抛光（CMP）期间保持晶片的平面性。该项目通过将空闲TSV重新配置为各种电路和系统的器件来应对挑战。一个机会的计算机辅助设计（CAD）框架也将提出TSV器件的最佳利用。拟议的研究将为3D IC在所有设计层面（器件、电路和CAD）的进步开辟一个新的变革方向，而不需要改变当前的半导体工艺。PI还将利用与工业技术研究院的合作，为美国本科生和研究生建立一个广泛的国际实习计划，这将有利于一般的3D IC研究社区。此外，PI将在研究框架内为本科生和代表性不足的少数族裔开发各种活动，为罗拉当地高中生举办内容丰富的3D俄罗斯方块比赛，以及基于Web 2.0的3D论坛，用于3D IC社区的合作研究。