DMREF: Doping and Defects in Diamond for Electronics

与目前使用的宽禁带半导体材料相比，金刚石的电子性能优越。对于电子应用，金刚石的高电子和空穴迁移率值可以实现高速和大电流操作，其低介电常数有助于高频操作，其宽带隙支持高击穿电场，其高导热性支持大电流操作。基于金刚石的功率和高频电子器件将在当前半导体电子器件不允许的功率体制下工作。其影响是，金刚石独特的半导体特性将使一种新的、更节能的、更高功率、更高电压和更高温度的电子设备成为可能，并将改变交通、制造和能源领域的应用。为了实现金刚石在电子二极管和晶体管中的潜力，关键是电场击穿强度要大，并实现所需的p型和n型掺杂谱。在二极管和晶体管器件中，在横向和垂直方向上形成具有所需变化的掺杂谱线是形成半导体结和控制电场和击穿电压的关键。该项目的目标是推进所需的科学和工程知识，以形成金刚石电子器件所需的掺杂轮廓，并减少金刚石中的缺陷，从而实现金刚石器件的全部高压电位。另一个目标是培训钻石技术方面的研究生和暑期本科生实习生。在金刚石材料中形成具有横向和纵向变化的掺杂谱线是形成半导体结和控制金刚石二极管和晶体管器件中电场和击穿电压的关键。该项目的第一个目标是通过离子注入与退火相结合的方法，开发在电子领域形成受控掺杂的工艺、技术诀窍和理解。金刚石退火将在(1)高压和高温条件下进行研究，(2)低压和高温亚稳态条件下进行研究，金刚石表面覆盖氢以阻止或减缓金刚石向石墨的转化。该项目的第二个目标是开发工艺，技术诀窍和理解，以减少金刚石中的点和位错缺陷，从而产生具有更高击穿电压和更低泄漏电流的电子器件。第三个目标是开发计算工具和对金刚石材料性质的理解，以预测掺杂谱，预测掺杂激活的退火过程结果，并预测金刚石电子器件的特性。

Diamond's electronic properties are superior compared to currently used wide bandgap semiconductor materials. For electronic applications, diamond's high electron and hole mobility values enable high speed and high current operation, its low dielectric constant contributes to high frequency operation, its wide bandgap supports a high breakdown electric field and its high thermal conductivity supports high current operation. Diamond-based power and high frequency electronics will operate at power regimes not allowed by current semiconductor electronic devices. The impact is that the exceptional semiconductor properties of diamond will enable a new and more energy efficient class of higher-power, higher-voltage, and higher temperature electronic devices and will transform applications in transportation, manufacturing and energy sectors. To realize the potential of diamond for electronic diodes and transistors it is crucial that the electric field breakdown strength be large and that desired p-type and n-type doping profiles be achieved. The formation of doping profiles with desired variation in both the lateral and vertical directions are key to forming semiconductor junctions and controlling the electric field and breakdown voltages in diode and transistor devices. The goal of this project is to advance the scientific and engineering knowledge needed to form desired doping profiles for diamond electronic devices and to reduce the defects in diamond such that the full high voltage potential of diamond devices is achieved. An additional goal is to train graduate students and summer undergraduate student interns in diamond technology.The formation of doping profiles in diamond material with desired variation in both the lateral and vertical directions are key to forming semiconductor junctions and controlling the electric field and breakdown voltages in diamond diode and transistor devices. The first objective of this project is develop the processes, know-how and understanding of forming controlled doping profiles in diamond for electronics by using ion implantation coupled with annealing. Diamond annealing will be studied at (1) high pressure and high temperature conditions and (2) metastable conditions of low pressure and high temperature with the surface of the diamond covered with hydrogen to prevent/slow the conversion of diamond to graphite. The second objective of this project is to develop processes, know-how and understanding to reduce point and dislocation defects in the diamond yielding electronic devices with higher breakdown voltages and lower leakage currents. The third objective is to develop the computation tools and diamond material properties understanding to predict doping profiles, to predict annealing process results for dopant activation, and to predict diamond electronic device characteristics.