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E2CDA: Type II: Memory, Logic, and Logic in Memory Using Three Terminal Magnetic Tunnel Junctions

E2CDA: Type II: Memory, Logic, and Logic in Memory Using Three Terminal Magnetic Tunnel Junctions
E2CDA:类型 II:使用三端子磁性隧道结的存储器、逻辑和存储器中的逻辑
批准号:
1639921
负责人:
Marc Baldo
金额:
$40.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-10-01 至 2019-09-30
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中文摘要
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英文摘要
Modern processors dissipate at least 100× more energy when reading memory than performing simple arithmetic. The origin of this "memory wall" is the increasing gap between processor and memory speeds. Systems dissipate power making up for this speed gap with support logic such as caches, and further power is consumed in unused processor cycles while waiting for memory. One potential solution is to use spin rather than charge to store and process information. The dual capabilities of spintronics in logic and memory will be used to address the "memory wall" in two tasks: first by reducing memory write times from ~10ns to 1-10ps, and second by incorporating some logical functions directly within memory arrays. The focus will be to demonstrate multiply and accumulate circuits the foundation of all logic systems, but optimized here for convolutional neural networks. Industrial connections will be fostered through research visits from industrial researchers and the placement of students for internships and eventual employment. The additional aims of the educational mission are: 1) to inspire career interest of K-12 students in science and engineering; 2) to provide undergraduate students with cutting-edge research opportunities; and 3) to prepare students for future engineering careers through curriculum development and interdisciplinary collaboration. The technical goals of this program will be realized using new techniques for the interrogation and electrical manipulation of synthetic antiferromagnets, thereby enhancing the speed of magnetic tunnel junction logic and memory. Overcoming the material challenges of integrating topological and magnetic insulators will reduce the energy dissipation towards thermodynamic limits. The combination of low switching energy via efficient spin current generation in topological insulators, and fast switching in synthetic antiferromagnets is expected to deliver energy-delay products below 1fJ.ps.
期刊论文(8)
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会议论文
A logic-in-memory design with 3-terminal magnetic tunnel junction function evaluators for convolutional neural networks
用于卷积神经网络的具有三端磁隧道结函数评估器的内存逻辑设计
DOI: 10.1109/nanoarch.2017.8053724
发表时间: 2017
期刊: 2017 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH
影响因子: --
作者: [Dutta, Sumit, Siddiqui, Saima A., Buttner, Felix, Liu, Luqiao, Ross, Caroline A., Baldo, Marc A.]
通讯作者: Baldo, Marc A.
DOI: 10.1103/physrevlett.119.077702
发表时间: 2017-08-18
期刊: PHYSICAL REVIEW LETTERS
影响因子: 8.6
作者: [Han, Jiahao, Richardella, A., Liu, Luqiao]
通讯作者: Liu, Luqiao
DOI: 10.1103/physrevapplied.6.054001
发表时间: 2016-11-02
期刊: PHYSICAL REVIEW APPLIED
影响因子: 4.6
作者: [Finley, Joseph, Liu, Luqiao]
通讯作者: Liu, Luqiao
The Spatial Resolution Limit for an Individual Domain Wall in Magnetic Nanowires
磁性纳米线中单个畴壁的空间分辨率极限
DOI: 10.1021/acs.nanolett.7b03199
发表时间: 2017
期刊: Nano Letters
影响因子: 10.8
作者: [Dutta, Sumit, Siddiqui, Saima A., Currivan-Incorvia, Jean Anne, Ross, Caroline A., Baldo, Marc A.]
通讯作者: Baldo, Marc A.
7
    Low energy magnetic domain wall logic
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