E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing
E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing
批准号:
1639958
负责人:
Mykhailo Povolotskyi
金额:
$43.49万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-10-01 至 2019-09-30
中文摘要
点击翻译按钮获取中文摘要
英文摘要
Microprocessors containing billions of transistor switches are at the heart of PCs, cell phones, computer servers answering our internet searches, and supercomputers modeling the weather and designing new drugs and aircraft. Modern machinery is controlled by microprocessors; a typical car uses 50. After 50 years of rapid improvement, since 2000 progress has stalled, primarily because the transistors consume too much energy when they switch. As transistors are made smaller, more fit on a chip, and the energy consumed increases. The battery is drained quickly and chip becomes hot. Slowing the switching reduces heating, but then the software runs slowly. In this program, a new transistor design will be investigated. If successful, these transistors will consume 100 times less switching energy, allowing faster, more powerful chips. The challenge is the power supply voltage; reducing the voltage by 2:1 reduces the switching energy 4:1. Between ~1990-2005, voltages were reduced from 5 to 1 Volt. Unfortunately, with normal (MOS) transistor switches, below ~0.7 Volts the transistor's switching becomes imperfect, with the transistor not turning completely off. This finite off-state leakage current increases energy consumption, hence it has not been possible to supplies much below 0.7 Volts. Ten years ago, tunnel transistors were proposed, as these can turn off nearly completely even at supplies as low as 0.3 Volts. Unfortunately, tunnel transistors do not turn on well, and microprocessors using them will therefore operate slowly. This limitation becomes much worse if the supply is dropped to 0.1 Volts. This program will research a new design, the triple-heterojunction tunnel transistor. This has added semiconductor junction layers which increased the on-current by as much as 100:1. If successful, rapidly-switching microprocessors will be feasible with even a 0.07V supply, and would consume as little as 1% of the energy of today's technology.
期刊论文(3)
专著(0)
科研奖励(0)
会议论文
A tunnel FET design for high-current, 120 mV operation
适用于高电流、120 mV 操作的隧道 FET 设计
DOI:
10.1109/iedm.2016.7838511
发表时间:
2016
期刊:
2016 IEEE International Electron Devices Meeting (IEDM
影响因子:
--
作者:
[Long, P., Huang, J. Z., Povolotskyi, M., Verreck, D., Charles, J., Kubis, T., Klimeck, G., Rodwell, M. J.W., Calhoun, B. H.]
通讯作者:
Calhoun, B. H.
DOI:
10.1109/ted.2017.2690669
发表时间:
2017-01
期刊:
IEEE Transactions on Electron Devices
影响因子:
3.1
作者:
[Jun Z. Huang;P. Long;M. Povolotskyi;H. Ilatikhameneh;T. Ameen;R. Rahman;M. Rodwell;Gerhard Klimeck]
通讯作者:
Jun Z. Huang;P. Long;M. Povolotskyi;H. Ilatikhameneh;T. Ameen;R. Rahman;M. Rodwell;Gerhard Klimeck
A high-current InP-channel triple heterojunction tunnel transistor design
大电流InP沟道三异质结隧道晶体管设计
DOI:
10.1109/drc.2017.7999437
发表时间:
2017
期刊:
2017 75th Annual Device Research Conference (DRC
影响因子:
--
作者:
[Long, Pengyu, Povolotskyi, Michael, Huang, Jun Z., Charles, James, Kubis, Tillmann, Klimeck, Gerhard, Rodwell, Mark J.]
通讯作者:
Rodwell, Mark J.
Collaborative Research: nm Electron Wave Devices for Low-Power VLSI Electronics
-
批准号:1509394
-
项目类别:Standard Grant
-
资助金额:$24.0万
-
财政年份:2015
-
负责人:Mykhailo Povolotskyi
-
依托单位:
国内基金
海外基金
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