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E2CDA: Type I: Collaborative Research: Interconnects Beyond Cu

E2CDA: Type I: Collaborative Research: Interconnects Beyond Cu
E2CDA:I 类:协作研究:铜以外的互连
批准号:
1740270
负责人:
Katayun Barmak
金额:
$26.22万
依托单位:
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2017
资助国家:
美国
项目状态:
已结题
起止时间:
2017-09-15 至 2022-08-31

项目摘要

项目成果

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中文摘要
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英文摘要
When electrons move through wires, they are scattered by vibrating atoms and wire imperfections. This scattering is the source of the electrical resistance and results in power consumption. For the wires used in modern electronics (interconnects) this is already a bottleneck to computing performance and is worsening as the wires (along with the transistors) are made smaller. The aim of this program is to make the wires so small ( 10-nm in width and height) and so structurally perfect that quantum size effects arise and the electrons can travel in a ballistic fashion without scattering. This can result in orders of magnitude improvements in resistance and computing energy efficiency and enable a revolution in electronics. In addition to the societal benefit of improved computing, the program will support education and research at the undergraduate, graduate and post-doctoral levels at four institutions, Columbia University, Massachusetts Institute of Technology, Rensselaer Polytechnic Institute and the University of Central Florida. The outreach effort will include: (1) The Harlem Schools Partnership (HSP) for STEM education at CU, (2) MIT's Materials Day for industry outreach, (3) the Discovery Engineering program for high-school girls at RPI, and (4) the techCAMP "Future of Information" at UCF.To achieve its goal of ballistic conduction in metallic nanowires, the project will include the preparation and atomic scale characterization of single crystal metallic films and lines as well as experimental measurement of electron transport behavior, with ruthenium as the metal of choice for the initial studies. The stability of the metallic lines will also be investigated, since this is critical to the reliability of interconnects in computing systems. A theoretical and computational physics modeling effort will aim to provide a quantitative understanding of ballistic transport in the size and defect limits, and serve to identify preferred metals for ballistic conductance of interconnects for future efforts. The computational models and codes developed will be made available on the Nanohub (https://nanohub.org/). The project will additionally provide a proof-of-principle demonstration of how the proposed metallic conductors can be fabricated for technology implementation by the semiconductor industry.
期刊论文(8)
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会议论文
Erratum: “Electrodeposition of Cu(111) onto a Ru(0001) seed layer for epitaxial Cu interconnects” J. Appl. Phys. 130, 135301 (2021)
勘误表: – 将 Cu(111) 电沉积到 Ru(0001) 种子层上,用于外延 Cu 互连 – J. Appl.
DOI: 10.1063/5.0097197
发表时间: 2022
期刊: Journal of Applied Physics
影响因子: 3.2
作者: [Gusley, Ryan R., Cumston, Quintin, Coffey, Kevin R., West, Alan C., Barmak, Katayun]
通讯作者: Barmak, Katayun
DOI: 10.1116/6.0000018
发表时间: 2020-05-01
期刊: JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
影响因子: 2.9
作者: [Barmak, Katayun, Ezzat, Sameer, Coffey, Kevin R.]
通讯作者: Coffey, Kevin R.
Electrodeposition of Epitaxial Co on Ru(0001)/Al 2 O 3 (0001)
Ru(0001)/Al 2 O 3 (0001)上外延Co电沉积
DOI: 10.1149/2.1091915jes
发表时间: 2019
期刊: Journal of The Electrochemical Society
影响因子: 3.9
作者: [Gusley, Ryan, Sentosun, Kadir, Ezzat, Sameer, Coffey, Kevin R., West, Alan C., Barmak, Katayun]
通讯作者: Barmak, Katayun
DOI: 10.1063/5.0063418
发表时间: 2021-10
期刊: Journal of Applied Physics
影响因子: 3.2
作者: [Ryan R. Gusley;Quintin Cumston;K. Coffey;A. West;K. Barmak]
通讯作者: Ryan R. Gusley;Quintin Cumston;K. Coffey;A. West;K. Barmak
7
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