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SHF: Small: Collaborative Research: Skyrmion Mediated Eenergy-efficient VCMA Switching of 2-Terminal p-MTJ Memory

SHF：小型：合作研究：Skyrmion 介导的 2 端 p-MTJ 存储器的节能 VCMA 切换

基本信息

批准号：
1909030
负责人：
Jayasimha Atulasimha
金额：
$ 25万
依托单位：
Virginia Commonwealth University
依托单位国家：
美国
项目类别：
Standard Grant
财政年份：
2019
资助国家：
美国
起止时间：
2019-10-01 至 2024-03-31
项目状态：
已结题

来源：
https://www.nsf.gov/awardsearch/showAward?AWD_ID=1909030&HistoricalAwards=false
关键词：
SHF Small Collaborative Research Skyrmion

项目摘要

State of the art magnetic memory devices use electrical current to switch the magnetization of a nano-magnet from 'up' to 'down' state or vice versa and thus encode the binary bits 1 and 0 respectively. Unlike devices based on widely-used CMOS (Complementary Metal Oxide Semiconductor) technology, such a device, based on technology called spin transfer torque random access memory (STT-RAM), is non-volatile, a significant advantage. However, these devices consume about 1000 times the energy that CMOS devices use for switching. If electrical field is used to control magnetization, these devices could be a hundred times more energy-efficient. However, development of such control methods are impeded by the level of errors introduced due to the presence of material defects and room temperature thermal noise in the material. This project seeks to demonstrate new techniques that makes the switching and control process robust to such defects, thus achieving the energy savings needed for this technology to be competitive with CMOS devices. The project would also help mentor undergraduate summer research, various K-12 workshops (including a K-12 research experience for underrepresented sections in partnership with Richmond Minorities in Engineering Program) on nano-magnetic computing. This project aims to demonstrate that forcing the magnetization through an intermediate so-called "magnetic skyrmion state", where the magnetization spirals from pointing up/down at the core to pointing down/up at the periphery of a circular nano-magnet, makes the switching process extremely robust as well as eliminates the need for any extra magnetic field. The development of such device, if successful, could make the energy efficient Voltage Control of Magnetic Anisotropy (VCMA) switching technique viable for practical memory devices while needing only modest changes to existing STT-RAM fabrication process. The key technical approach in this research project will address gaps in knowledge as well as demonstrate a proof of concept for skyrmion mediated nano-magnetic memory device. The project plans to 1) investigate the growth of various material systems and interfaces and characterize their magnetic properties to develop an optimized memory device that is energy efficient, scalable and has low switching error, 2) demonstrate proof of concept VCMA switching of a nano-magnetic memory cell ~100 nm diameter mediated by a skyrmion state and characterize its switching error, and 3) perform rigorous modeling of skyrmion mediated magnetization dynamics in the presence of thermal noise and defects to understand why the intermediate skyrmion state makes the magnetization reversal robust and study further scaling of these devices. Students will be trained on complementary thin film growth, nano-fabrication, magnetic characterization and micromagnetic modeling in this project.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

现有技术的磁存储设备使用电流将纳米磁体的磁化从‘UP’切换到‘DOWN’状态，或从‘DOWN’状态切换到‘DOWN’状态，并因此分别对二进制位1和0进行编码。与基于广泛使用的CMOS(互补金属氧化物半导体)技术的器件不同，这种基于自旋转移扭矩随机存取存储器(STT-RAM)技术的器件是非易失性的，这是一个显著的优势。然而，这些器件所消耗的能量大约是cmos器件用于开关的1000倍。如果使用电场来控制磁化，这些设备的能效可能会提高一百倍。然而，由于材料缺陷和材料中的室温热噪声的存在而引入的误差水平阻碍了这种控制方法的发展。该项目旨在展示新的技术，使开关和控制过程对此类缺陷具有健壮性，从而实现该技术与CMOS器件竞争所需的节能。该项目还将帮助指导本科生暑期研究、各种K-12研讨会(包括与里士满工程少数民族项目合作，为代表性不足的部分提供K-12研究经验)。该项目旨在证明，通过中间所谓的“磁性天光状态”强制磁化，即磁化从指向核心的向上/向下旋转到指向圆形纳米磁体的外围，使得切换过程非常稳健，并且消除了对任何额外磁场的需要。如果这种器件的开发成功，可以使高能效的磁各向异性电压控制(VCMA)开关技术适用于实际的存储器件，而只需要对现有的STT-RAM制造工艺进行轻微的改变。这项研究项目的关键技术方法将解决知识空白，并展示Skyrmion介导型纳米磁存储器件的概念验证。该项目计划1)研究各种材料系统和界面的生长并表征它们的磁性，以开发出一种能量高效、可扩展和低开关误差的优化存储器件，2)展示直径约100 nm的纳米磁存储单元通过天米子态进行VCMA开关的概念证明并表征其开关误差，以及3)在存在热噪声和缺陷的情况下对天米子介导的磁化动力学进行严格的模拟，以了解为什么中间天米态使磁化反转变得健壮，并进一步研究这些器件的尺度。在这个项目中，学生将接受互补薄膜生长、纳米制造、磁性表征和微磁建模方面的培训。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。