CAREER: Integration of 2D materials for broadband silicon photonics

职业：宽带硅光子学二维材料的集成

• 批准号: 1915018
• 负责人: Mo Li
• 金额: $ 8.99万
• 依托单位: University of Washington
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2018
• 资助国家: 美国
• 起止时间: 2018-09-01 至 2020-03-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1915018&HistoricalAwards=false
• 关键词: CAREER; Integration; 2D; materials; broadband

The objective of this research is to investigate the integration of novel two-dimensional materials in silicon-based, planar photonic circuits to achieve broadband optoelectronic devices operating in the near- to mid-infrared spectral range. The two-dimensional materials to be studied include graphene and monolayer transition metal dichalcogenides of various types. The approach is to develop fabrication processes and conduct characterization and measurement of two-dimensional materials integrated optoelectronic devices. The specific research goals include development of broadband and highly efficient photodetectors and modulators for the near- and mid-infrared, investigation and utilization of nonlinear optical phenomena in two-dimensional materials, and demonstration of waveguide integrated and coupled two-dimensional light emitters. Intellectual Merit: The optoelectronic properties of two-dimensional materials have not been widely utilized for integrated optoelectronic devices. The proposed research will demonstrate practical optoelectronic devices based on two-dimensional materials with unprecedented performances. The integrated approach will also provide effective near-field means to investigate the optoelectronic properties of the two-dimensional materials. The research results will be the first steps to incorporating two-dimensional materials in large scale integrated, silicon-based photonic circuits and systems for optical communication and computation. Broader Impacts: The project will impact the industry and the scientific community by providing new materials for optoelectronic devices. The education and outreach activities will encourage high-schools students to pursue a career in science and engineering, disseminate the knowledge learned in the project through undergraduate participation in research and curriculum development, and recruit minority students to participate in research.

本研究的目的是研究新型二维材料在硅基平面光子电路中的集成，以实现在近中红外光谱范围内工作的宽带光电器件。待研究的二维材料包括石墨烯和各种类型的单层过渡金属二硫属化物。该方法是开发二维材料集成光电子器件的制造工艺并进行表征和测量。具体的研究目标包括开发宽带和高效率的近红外和中红外光电探测器和调制器，二维材料中非线性光学现象的研究和利用，以及波导集成和耦合二维光发射器的演示。智力成果：二维材料的光电特性尚未被广泛用于集成光电器件。拟议的研究将展示基于二维材料的实用光电器件，具有前所未有的性能。该集成方法也将为研究二维材料的光电特性提供有效的近场手段。研究结果将是将二维材料纳入大规模集成硅基光子电路和光通信和计算系统的第一步。更广泛的影响：该项目将通过为光电器件提供新材料来影响工业和科学界。教育和外联活动将鼓励高中学生从事科学和工程职业，通过本科生参与研究和课程编制传播在项目中学到的知识，并招募少数民族学生参与研究。

项目成果

Waveguide-integrated black phosphorus photodetector with high responsivity and low dark current

• DOI: 10.1038/nphoton.2015.23
• 发表时间: 2015-04-01
• 期刊: NATURE PHOTONICS
• 影响因子: 35
• 作者: Youngblood, Nathan;Chen, Che;Li, Mo
• 通讯作者: Li, Mo

Ultrafast photocurrent measurements of a black phosphorus photodetector

• DOI: 10.1063/1.4975360
• 发表时间: 2017-01-30
• 期刊: APPLIED PHYSICS LETTERS
• 影响因子: 4
• 作者: Youngblood, Nathan;Li, Mo
• 通讯作者: Li, Mo

Midinfrared Electro-optic Modulation in Few-Layer Black Phosphorus

• DOI: 10.1021/acs.nanolett.7b03050
• 发表时间: 2017-10-01
• 期刊: NANO LETTERS
• 影响因子: 10.8
• 作者: Peng, Ruoming;Khaliji, Kaveh;Li, Mo
• 通讯作者: Li, Mo

Three-Dimensional Integration of Black Phosphorus Photodetector with Silicon Photonics and Nanoplasmonics

• DOI: 10.1021/acs.nanolett.6b04332
• 发表时间: 2017-02-01
• 期刊: NANO LETTERS
• 影响因子: 10.8
• 作者: Chen, Che;Youngblood, Nathan;Li, Mo
• 通讯作者: Li, Mo