CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power Computing
职业:用于超低功耗计算的反铁电负电容晶体管
基本信息
- 批准号:2047880
- 负责人:
- 金额:$ 50万
- 依托单位:
- 依托单位国家:美国
- 项目类别:Continuing Grant
- 财政年份:2021
- 资助国家:美国
- 起止时间:2021-03-15 至 2026-02-28
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
Proposal Number: 2047880Principal Investigator: Asif I KhanTitle: CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power ComputingInstitution: Georgia Institute of TechnologyNontechnical Abstract:The society is experiencing an unprecedented growth of its digital footprint—be it in the form of uploading a photo on Facebook or live-streaming a teaching module to a massive global audience in YouTube or commandeering a revolution via Twitter. This convenience of modern computing, however, comes with a steep cost in terms of energy use and environmental impact: today, the global information infrastructure, i.e., data centers, emit as much greenhouse gases as that of the state of Nevada or a country such as Netherlands or Malaysia and constitute around 1% of world-wide electricity demand. According to scientific estimates, this fraction may balloon up to 20% in the next 15-20 years. At the core of this predicament lies the fact that our cutting-edge digital hardware has long been overdue for a prime upgrade in terms of their energy efficiencies—at the level of its most fundamental, building blocks: the transistors. The proposed research aims to explore an energy-efficient transistor concept - negative capacitance field-effect transistor, which will be made using a new class of nanometer-scale materials, called the antiferroelectric oxides.Technical AbstractThe project aims at addressing the generational, global challenge of energy efficiency of information processing electronics by exploring an energy-efficient transistor concept, namely the negative capacitance field-effect transistor (NCFET). The main claim of innovation is the use of a new class of nanometer-scale materials, called the antiferroelectric oxides, to enable this transistor technology. The underlying hypothesis is that owing to a unique physical phenomenon in antiferroelectrics: the electric field-induced non-polar-to-polar phase transition, antiferroelectric NCFETs can lead to a reduction of the energy in transistors below the fundamental, thermodynamic limit, much more than that is allowable in their conventional counterparts: ferroelectric based NCFETs. Tightly integrated with these research activities is a 5-year plan to pilot sustainable, all-level educational curricula that is scalable to the state and the national levels for creating a steady pipeline of domestic semiconductor workforce. Proposed pre-college activities include increasing awareness and excitement for semiconductor related topics in high-school classrooms through hands-on, outreach activities and teacher training via partnership with local schools. For higher-level education, the project will undertake formal and scholarly studies to understand the efficacy of different pedagogical techniques, such as online, remote and hybrid mode of teaching, in the new socio-economic realities of the post-pandemic world for undergraduate and graduate semiconductor courses.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
提案编号:2047880首席研究员:阿西夫我汗标题:职业生涯:反铁电负电容晶体管的超低功耗计算机构:格鲁吉亚理工学院非技术摘要:社会正在经历一个前所未有的增长,其数字足迹,无论是在Facebook上上传照片或直播教学模块的形式,以大量的全球观众在YouTube或征用通过Twitter的革命。然而,现代计算的这种便利性在能源使用和环境影响方面带来了高昂的成本:今天,全球信息基础设施,即,数据中心排放的温室气体与内华达州或荷兰或马来西亚等国家一样多,占全球电力需求的1%左右。根据科学估计,这一比例在未来15-20年内可能会飙升至20%。这一困境的核心在于,我们的尖端数字硬件早就应该在能效方面进行主要升级了在其最基本的构建模块:晶体管的水平上。 该项目旨在探索一种节能晶体管概念-负电容场效应晶体管,它将使用一类新的纳米级材料制成,称为反铁电氧化物。技术摘要该项目旨在通过探索节能晶体管概念,即负电容场效应晶体管(NCFET)。创新的主要主张是使用一类新的纳米级材料,称为反铁电氧化物,以实现这种晶体管技术。基本的假设是,由于反铁电体中的一种独特的物理现象:电场诱导的非极性到极性相变,反铁电NCFs可以导致晶体管中的能量降低到基本的热力学极限以下,远远超过传统的对应物:基于铁电的NCFs。与这些研究活动紧密结合的是一个5年计划,以试点可持续的,所有级别的教育课程,可扩展到州和国家层面,以创造一个稳定的国内半导体劳动力管道。拟议的大学预科活动包括通过与当地学校合作,通过实践、推广活动和教师培训,提高高中课堂对半导体相关主题的认识和兴趣。对于高等教育,该项目将进行正式和学术研究,以了解不同教学技术的功效,如在线、远程和混合教学模式,在新的社会经济现实中,该奖项反映了NSF的法定使命,并被认为值得通过使用基金会的智力价值和更广泛的影响审查标准。
项目成果
期刊论文数量(2)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage
- DOI:10.1109/led.2022.3231123
- 发表时间:2023-02
- 期刊:
- 影响因子:4.9
- 作者:D. Das;Prasanna Venkatesan Ravindran;Chinsung Park;Nujhat Tasneem;Zheng Wang;Hang Chen;W. Chern
- 通讯作者:D. Das;Prasanna Venkatesan Ravindran;Chinsung Park;Nujhat Tasneem;Zheng Wang;Hang Chen;W. Chern
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Asif Khan其他文献
Fast and cycle-accurate modeling of a multicore processor
多核处理器的快速且周期精确的建模
- DOI:
10.1109/ispass.2012.6189224 - 发表时间:
2012 - 期刊:
- 影响因子:0
- 作者:
Asif Khan;M. Vijayaraghavan;Silas Boyd;Arvind - 通讯作者:
Arvind
Wave function penetration effects on ballistic drain current in double gate MOSFETs fabricated on (1 0 0) and (1 1 0) silicon surfaces
波函数穿透对 (1 0 0) 和 (1 1 0) 硅表面上制造的双栅极 MOSFET 弹道漏极电流的影响
- DOI:
10.1016/j.sse.2008.12.010 - 发表时间:
2009 - 期刊:
- 影响因子:1.7
- 作者:
M. Ashraf;Asif Khan;A. Haque - 通讯作者:
A. Haque
Cycle-accurate modeling of multicore processors on FPGAs
FPGA 上多核处理器的周期精确建模
- DOI:
- 发表时间:
2013 - 期刊:
- 影响因子:0
- 作者:
Asif Khan - 通讯作者:
Asif Khan
Bleeding disorders in the tribe: result of consanguineous in breeding
部落的出血性疾病:近亲繁殖的结果
- DOI:
- 发表时间:
2010 - 期刊:
- 影响因子:3.7
- 作者:
M. Borhany;Zaen;Zeeshan ul Qadr;M. Rehan;A. Naz;Asif Khan;S. Ansari;T. Farzana;M. Nadeem;S. Raza;T. Shamsi - 通讯作者:
T. Shamsi
A Case Study of Instructional Contributions of Community and Government Secondary School Administrators in Pakistan
巴基斯坦社区和政府中学管理人员的教学贡献案例研究
- DOI:
10.22610/jevr.v4i2.100 - 发表时间:
2013 - 期刊:
- 影响因子:0
- 作者:
Asif Khan - 通讯作者:
Asif Khan
Asif Khan的其他文献
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{{ truncateString('Asif Khan', 18)}}的其他基金
MRI: Development of A New High Temperature Source Metalorganic Chemical Vapor Deposition System (HTS-MOCVD) for Next Generation IIIA/B-Nitrides
MRI:开发用于下一代 IIIA/B 氮化物的新型高温源金属有机化学气相沉积系统 (HTS-MOCVD)
- 批准号:
2216107 - 财政年份:2022
- 资助金额:
$ 50万 - 项目类别:
Standard Grant
Synaptic dynamics in ferroelectric devices and their application to deep neural networks
铁电器件中的突触动力学及其在深度神经网络中的应用
- 批准号:
1810005 - 财政年份:2018
- 资助金额:
$ 50万 - 项目类别:
Standard Grant
GOALI: Low dislocation density semi-polar III-nitride substrates for polarization free ultraviolet
目标:用于无偏振紫外的低位错密度半极性III族氮化物衬底
- 批准号:
1128563 - 财政年份:2011
- 资助金额:
$ 50万 - 项目类别:
Continuing Grant
Plasmons in III-Nitrides and III-Nitride Plasma Wave Terahertz Detectors
III 族氮化物和 III 族氮化物等离子体波太赫兹探测器中的等离子体激元
- 批准号:
0801395 - 财政年份:2008
- 资助金额:
$ 50万 - 项目类别:
Continuing Grant
Aluminum Gallium Nitride Heterostructures for High Temperature Transistor and Sensor Applications
用于高温晶体管和传感器应用的氮化铝镓异质结构
- 批准号:
9160469 - 财政年份:1992
- 资助金额:
$ 50万 - 项目类别:
Standard Grant
Fabrication and Measurement of Galium Arsenide-Based Multiple Quantum Well Structures
砷化镓基多量子阱结构的制备和测量
- 批准号:
8861269 - 财政年份:1989
- 资助金额:
$ 50万 - 项目类别:
Standard Grant
Measurement of Electro-Optical Properties of Aluminum-Gallium-Nitride for Integrated Optics Devices (Materials Research)
用于集成光学器件的氮化铝镓电光特性的测量(材料研究)
- 批准号:
8760768 - 财政年份:1988
- 资助金额:
$ 50万 - 项目类别:
Standard Grant
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