CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power Computing

提案编号：2047880首席研究员：阿西夫我汗标题：职业生涯：反铁电负电容晶体管的超低功耗计算机构：格鲁吉亚理工学院非技术摘要：社会正在经历一个前所未有的增长，其数字足迹，无论是在Facebook上上传照片或直播教学模块的形式，以大量的全球观众在YouTube或征用通过Twitter的革命。然而，现代计算的这种便利性在能源使用和环境影响方面带来了高昂的成本：今天，全球信息基础设施，即，数据中心排放的温室气体与内华达州或荷兰或马来西亚等国家一样多，占全球电力需求的1%左右。根据科学估计，这一比例在未来15-20年内可能会飙升至20%。这一困境的核心在于，我们的尖端数字硬件早就应该在能效方面进行主要升级了在其最基本的构建模块：晶体管的水平上。 该项目旨在探索一种节能晶体管概念-负电容场效应晶体管，它将使用一类新的纳米级材料制成，称为反铁电氧化物。技术摘要该项目旨在通过探索节能晶体管概念，即负电容场效应晶体管（NCFET）。创新的主要主张是使用一类新的纳米级材料，称为反铁电氧化物，以实现这种晶体管技术。基本的假设是，由于反铁电体中的一种独特的物理现象：电场诱导的非极性到极性相变，反铁电NCFs可以导致晶体管中的能量降低到基本的热力学极限以下，远远超过传统的对应物：基于铁电的NCFs。与这些研究活动紧密结合的是一个5年计划，以试点可持续的，所有级别的教育课程，可扩展到州和国家层面，以创造一个稳定的国内半导体劳动力管道。拟议的大学预科活动包括通过与当地学校合作，通过实践、推广活动和教师培训，提高高中课堂对半导体相关主题的认识和兴趣。对于高等教育，该项目将进行正式和学术研究，以了解不同教学技术的功效，如在线、远程和混合教学模式，在新的社会经济现实中，该奖项反映了NSF的法定使命，并被认为值得通过使用基金会的智力价值和更广泛的影响审查标准。

Proposal Number: 2047880Principal Investigator: Asif I KhanTitle: CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power ComputingInstitution: Georgia Institute of TechnologyNontechnical Abstract:The society is experiencing an unprecedented growth of its digital footprint—be it in the form of uploading a photo on Facebook or live-streaming a teaching module to a massive global audience in YouTube or commandeering a revolution via Twitter. This convenience of modern computing, however, comes with a steep cost in terms of energy use and environmental impact: today, the global information infrastructure, i.e., data centers, emit as much greenhouse gases as that of the state of Nevada or a country such as Netherlands or Malaysia and constitute around 1% of world-wide electricity demand. According to scientific estimates, this fraction may balloon up to 20% in the next 15-20 years. At the core of this predicament lies the fact that our cutting-edge digital hardware has long been overdue for a prime upgrade in terms of their energy efficiencies—at the level of its most fundamental, building blocks: the transistors. The proposed research aims to explore an energy-efficient transistor concept - negative capacitance field-effect transistor, which will be made using a new class of nanometer-scale materials, called the antiferroelectric oxides.Technical AbstractThe project aims at addressing the generational, global challenge of energy efficiency of information processing electronics by exploring an energy-efficient transistor concept, namely the negative capacitance field-effect transistor (NCFET). The main claim of innovation is the use of a new class of nanometer-scale materials, called the antiferroelectric oxides, to enable this transistor technology. The underlying hypothesis is that owing to a unique physical phenomenon in antiferroelectrics: the electric field-induced non-polar-to-polar phase transition, antiferroelectric NCFETs can lead to a reduction of the energy in transistors below the fundamental, thermodynamic limit, much more than that is allowable in their conventional counterparts: ferroelectric based NCFETs. Tightly integrated with these research activities is a 5-year plan to pilot sustainable, all-level educational curricula that is scalable to the state and the national levels for creating a steady pipeline of domestic semiconductor workforce. Proposed pre-college activities include increasing awareness and excitement for semiconductor related topics in high-school classrooms through hands-on, outreach activities and teacher training via partnership with local schools. For higher-level education, the project will undertake formal and scholarly studies to understand the efficacy of different pedagogical techniques, such as online, remote and hybrid mode of teaching, in the new socio-economic realities of the post-pandemic world for undergraduate and graduate semiconductor courses.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.