CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power Computing

职业：用于超低功耗计算的反铁电负电容晶体管

• 批准号: 2047880
• 负责人: Asif Khan
• 金额: $ 50万
• 依托单位: Georgia Tech Research Corporation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2021
• 资助国家: 美国
• 起止时间: 2021-03-15 至 2026-02-28
• 项目状态: 未结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=2047880&HistoricalAwards=false
• 关键词: CAREER; Antiferroelectric; Negative; Capacitance; Transistors

Proposal Number: 2047880Principal Investigator: Asif I KhanTitle: CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power ComputingInstitution: Georgia Institute of TechnologyNontechnical Abstract:The society is experiencing an unprecedented growth of its digital footprint—be it in the form of uploading a photo on Facebook or live-streaming a teaching module to a massive global audience in YouTube or commandeering a revolution via Twitter. This convenience of modern computing, however, comes with a steep cost in terms of energy use and environmental impact: today, the global information infrastructure, i.e., data centers, emit as much greenhouse gases as that of the state of Nevada or a country such as Netherlands or Malaysia and constitute around 1% of world-wide electricity demand. According to scientific estimates, this fraction may balloon up to 20% in the next 15-20 years. At the core of this predicament lies the fact that our cutting-edge digital hardware has long been overdue for a prime upgrade in terms of their energy efficiencies—at the level of its most fundamental, building blocks: the transistors. The proposed research aims to explore an energy-efficient transistor concept - negative capacitance field-effect transistor, which will be made using a new class of nanometer-scale materials, called the antiferroelectric oxides.Technical AbstractThe project aims at addressing the generational, global challenge of energy efficiency of information processing electronics by exploring an energy-efficient transistor concept, namely the negative capacitance field-effect transistor (NCFET). The main claim of innovation is the use of a new class of nanometer-scale materials, called the antiferroelectric oxides, to enable this transistor technology. The underlying hypothesis is that owing to a unique physical phenomenon in antiferroelectrics: the electric field-induced non-polar-to-polar phase transition, antiferroelectric NCFETs can lead to a reduction of the energy in transistors below the fundamental, thermodynamic limit, much more than that is allowable in their conventional counterparts: ferroelectric based NCFETs. Tightly integrated with these research activities is a 5-year plan to pilot sustainable, all-level educational curricula that is scalable to the state and the national levels for creating a steady pipeline of domestic semiconductor workforce. Proposed pre-college activities include increasing awareness and excitement for semiconductor related topics in high-school classrooms through hands-on, outreach activities and teacher training via partnership with local schools. For higher-level education, the project will undertake formal and scholarly studies to understand the efficacy of different pedagogical techniques, such as online, remote and hybrid mode of teaching, in the new socio-economic realities of the post-pandemic world for undergraduate and graduate semiconductor courses.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.

提案编号：2047880主要研究员：ASIF I Khan标题：Career：用于超低功耗计算的反铁电负电容晶体管机构：佐治亚理工学院非技术摘要：社会正在经历其数字足迹前所未有的增长--无论是通过在Facebook上上传照片的形式，还是通过YouTube向全球大量观众直播教学模块的形式，或者通过Twitter发起一场革命。然而，现代计算的这种便利也伴随着能源使用和环境影响方面的高昂成本：今天，全球信息基础设施，即数据中心，排放的温室气体与内华达州或荷兰或马来西亚等国一样多，约占全球电力需求的1%。根据科学估计，这一比例在未来15-20年内可能会膨胀到20%。这种困境的核心在于，我们的尖端数字硬件早就应该在能效方面进行重大升级--在其最基本的组成部分：晶体管的层面上。本研究旨在探索一种新的高能效晶体管概念--负电容场效应晶体管，它将由一种新型纳米材料--反铁电氧化物制成。技术摘要该项目旨在通过探索一种高能效晶体管概念，即负电容场效应晶体管(NCFET)，来解决信息处理电子设备在能源效率方面面临的新一代全球性挑战。创新的主要主张是使用了一种新的纳米级材料，称为反铁电氧化物，使这种晶体管技术成为可能。基本的假设是，由于反铁电体中一种独特的物理现象：电场诱导的非极性到极性的相变，反铁电NCFET可以导致晶体管中的能量降低到基本的热力学极限以下，远远超过它们的传统同行：铁电NCFET。与这些研究活动紧密结合的是一项五年计划，该计划旨在试点可持续的所有级别的教育课程，该课程可根据州和国家层面进行扩展，以建立稳定的国内半导体劳动力管道。拟议的大学前活动包括通过动手、外展活动和与当地学校合作进行教师培训，在高中课堂上提高对半导体相关主题的认识和兴奋。对于高等教育，该项目将进行正式和学术研究，以了解不同的教学技术，如在线、远程和混合教学模式，在大流行后本科生和研究生半导体课程的新社会经济现实中的有效性。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

项目成果

A Ge-Channel Ferroelectric Field Effect Transistor With Logic-Compatible Write Voltage

• DOI: 10.1109/led.2022.3231123
• 发表时间: 2023-02
• 期刊: IEEE Electron Device Letters
• 影响因子: 4.9
• 作者: D. Das;Prasanna Venkatesan Ravindran;Chinsung Park;Nujhat Tasneem;Zheng Wang;Hang Chen;W. Chern