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Plasmons in III-Nitrides and III-Nitride Plasma Wave Terahertz Detectors

Plasmons in III-Nitrides and III-Nitride Plasma Wave Terahertz Detectors
III 族氮化物和 III 族氮化物等离子体波太赫兹探测器中的等离子体激元
批准号:
0801395
负责人:
Asif Khan
金额:
$30.09万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2008
资助国家:
美国
项目状态:
已结题
起止时间:
2008-05-01 至 2012-04-30

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AbstractECCS-0801395Y. Deng, University of South Carolina Research FdnObjective: The objective of the proposal is to fundamentally understand plasma wave oscillations in III-nitride materials and field-effect transistors and to develop integrable and tunable deep-submicron/nanoscale III-nitride plasma wave terahertz detectors. Fundamental understanding and exploitation of plasma wave oscillations in III-nitride materials and transistors holds a great promise to revolutionize terahertz electronics and advance the knowledge of mesoscopic and nanoscopic physics in III-nitrides. Intellectual Merit: The objective will be accomplished through four primary tasks: (1) development of theories and models for plasma wave oscillations in III-nitride materials; (2) characterization of plasma wave oscillations in III-nitride materials and validation of corresponding theories and models by experimental data; (3) development of detection theory for deep-submicron/nanoscale III-nitride plasma wave terahertz detectors; and (4) design, fabrication, and test of deep-submicron/nanoscale III-nitride plasma wave terahertz detectors and validation of the detection theory. Broader Impacts: The research will provide new insights and advance the knowledge on III-nitride device physics and material properties. The proposed terahertz detectors have a wide range of potential applications, including wireless communication for above 60 GHz, medical imaging, cancer diagnosis, far-infrared spectrum analysis, chemical-compound and biological-agent identification, etc. The principle investigator will integrate the research project with educational activities by: (1) outreach to students from local high schools, K-8 and the community through a hands-on exhibit at the South Carolina State Museum annually; (2) involvement of undergraduates, graduates, women, and minorities in the research program; (3) improvement of two undergraduate courses and two graduate courses; and (4) development of a new graduate course.
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会议论文
MRI: Development of A New High Temperature Source Metalorganic Chemical Vapor Deposition System (HTS-MOCVD) for Next Generation IIIA/B-Nitrides
CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power Computing
  • 批准号:
    2047880
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $50.0万
  • 财政年份:
    2021
  • 负责人:
    Asif Khan
  • 依托单位:
Synaptic dynamics in ferroelectric devices and their application to deep neural networks
  • 批准号:
    1810005
  • 项目类别:
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  • 资助金额:
    $45.0万
  • 财政年份:
    2018
  • 负责人:
    Asif Khan
  • 依托单位:
GOALI: Low dislocation density semi-polar III-nitride substrates for polarization free ultraviolet
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    2026
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    2026JJ82690
  • 项目类别:
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    2026
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基于废水零排放的FeS-As(III)置换法从污酸中清洁脱砷处理技术研究
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    2026JJ30130
  • 项目类别:
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  • 批准年份:
    2026
  • 负责人:
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