Aluminum Gallium Nitride Heterostructures for High Temperature Transistor and Sensor Applications

用于高温晶体管和传感器应用的氮化铝镓异质结构

• 批准号: 9160469
• 负责人: Asif Khan
• 金额: $ 4.99万
• 依托单位: APA Optics Inc
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 1992
• 资助国家: 美国
• 起止时间: 1992-01-01 至 1992-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=9160469&HistoricalAwards=false
• 关键词: Aluminum; Gallium; Nitride; Heterostructures; Temperature

The proposed program is aimed at developing aluminum gallium nitride heterostructure devices for high temperature sensor and electronics applications. We will focus on the high electron mobility transistor (or HEMT) for use as a high temperature microwave device or as a sensitive ultraviolet detector. Gallium nitride has a large bandgap of 3.2 eV which gives it a greater breakdown voltage and a higher saturated electron velocity than gallium arsenide. In addition, it is stable in air to around 800oC which makes it ideal for high temperature HEMT device use. HEMT devices are excellent for both power and low noise amplification since they posses a high carrier concentration and enhanced carrier mobility. Their power and noise performance increases with the potential barrier at the heterostructure interface. A Phase I program is proposed to produce high n-doped good optical quality films using a unique atomic layer epitaxy approach. All the present day growth and doping procedures cannot produce low resistivity epilayers. A successful Phase I program combined with our demonstration of high quality films and enhanced electron mobilities in heterojunctions with aluminum concentrations less than 20% will form a strong basis for a Phase II HEMT fabrication effort.

该计划旨在开发铝镓 用于高温传感器的氮化物异质结构器件 电子应用。 我们将重点讨论高电子 迁移率晶体管（或HEMT），用作高温 微波设备或作为灵敏的紫外检测器。 镓 氮化物具有3.2eV的大带隙，这使其具有更大的 击穿电压和更高的饱和电子速度比 砷化镓。 此外，它在空气中稳定， 800摄氏度，非常适合高温HEMT器件使用。 HEMT器件在功率和低噪声方面都很出色 放大，因为它们具有高载流子浓度， 增强载流子迁移率。 它们的功率和噪声性能 随着异质结构处的势垒而增加 接口. 提出了一个第一阶段计划，以生产高n掺杂的良好的 使用独特的原子层外延的光学质量膜 approach. 所有现今的生长和兴奋剂程序 不能产生低电阻率外延层。 成功的第一阶段 计划结合我们的高品质电影的演示， 铝异质结中增强的电子迁移率 低于20%的浓度将形成阶段的强有力基础 II HEMT制造工作。