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GOALI: Low dislocation density semi-polar III-nitride substrates for polarization free ultraviolet

GOALI: Low dislocation density semi-polar III-nitride substrates for polarization free ultraviolet
目标:用于无偏振紫外的低位错密度半极性III族氮化物衬底
批准号:
1128563
负责人:
Asif Khan
金额:
$39.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2011
资助国家:
美国
项目状态:
已结题
起止时间:
2011-10-01 至 2014-09-30

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中文摘要
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英文摘要
The objective of this program is to develop low dislocation density semi-polar AlGaN templates and substrate technology and demonstrate their feasibility for fabricating polarization-free high power, high-efficiency deep ultraviolet light emitting diodes (UVLEDs). Another leading objective is to integrate scientific research with innovative educational programs aimed at training high school, undergraduate level, graduate level students and post-doctoral researchers at University of South Carolina.The intellectual merit is to understand and fabricate the polarization free deep UVLEDs with emission wavelengths from 250 to 365 nm for applications in water/air purification, analytical scientific instrumentation, bio-agent detection systems, and emerging medical instrumentation. Although the polar (c-plane) based deep UV devices are able to penetrate some niche markets, the output power is far below that which is required for penetration of the largest UV market segments. Polarization free, semi-polar deep UVLEDs have great potential to overcome the current issues faced by polar UVLEDs for integration in systems.The broader impacts are very significant as this program will create high tech jobs in the state of South Carolina. The proposed research activity will also help to support the research at the University of South Carolina at Columbia. The knowledge created will be broadly disseminated. The funds will provide learning opportunity for under-represented groups. Moreover the application of deep UVLEDs in air-water purification will provide a tremendous benefit to society in general. The proposed technology is thus transformative in nature.
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CAREER: Antiferroelectric Negative Capacitance Transistors for Ultra-low Power Computing
  • 批准号:
    2047880
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $50.0万
  • 财政年份:
    2021
  • 负责人:
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Synaptic dynamics in ferroelectric devices and their application to deep neural networks
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  • 项目类别:
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  • 资助金额:
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  • 财政年份:
    2018
  • 负责人:
    Asif Khan
  • 依托单位:
Plasmons in III-Nitrides and III-Nitride Plasma Wave Terahertz Detectors
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    82270883
  • 项目类别:
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