GOALI: Low dislocation density semi-polar III-nitride substrates for polarization free ultraviolet

目标：用于无偏振紫外的低位错密度半极性III族氮化物衬底

• 批准号: 1128563
• 负责人: Asif Khan
• 金额: $ 39万
• 依托单位: University South Carolina Research Foundation
• 依托单位国家: 美国
• 项目类别: Continuing Grant
• 财政年份: 2011
• 资助国家: 美国
• 起止时间: 2011-10-01 至 2014-09-30
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1128563&HistoricalAwards=false
• 关键词: GOALI; Low; dislocation; density; semi

The objective of this program is to develop low dislocation density semi-polar AlGaN templates and substrate technology and demonstrate their feasibility for fabricating polarization-free high power, high-efficiency deep ultraviolet light emitting diodes (UVLEDs). Another leading objective is to integrate scientific research with innovative educational programs aimed at training high school, undergraduate level, graduate level students and post-doctoral researchers at University of South Carolina.The intellectual merit is to understand and fabricate the polarization free deep UVLEDs with emission wavelengths from 250 to 365 nm for applications in water/air purification, analytical scientific instrumentation, bio-agent detection systems, and emerging medical instrumentation. Although the polar (c-plane) based deep UV devices are able to penetrate some niche markets, the output power is far below that which is required for penetration of the largest UV market segments. Polarization free, semi-polar deep UVLEDs have great potential to overcome the current issues faced by polar UVLEDs for integration in systems.The broader impacts are very significant as this program will create high tech jobs in the state of South Carolina. The proposed research activity will also help to support the research at the University of South Carolina at Columbia. The knowledge created will be broadly disseminated. The funds will provide learning opportunity for under-represented groups. Moreover the application of deep UVLEDs in air-water purification will provide a tremendous benefit to society in general. The proposed technology is thus transformative in nature.

本计划的目标是开发低位错密度半极性AlGaN模板和衬底技术，并证明其用于制造无偏振高功率，高效率深紫外发光二极管（UVLED）的可行性。另一个主要目标是将科学研究与创新教育计划相结合，旨在培养南卡罗来纳州大学的高中生、本科生、研究生和博士后研究人员。智力价值是理解和制造发射波长为250至365 nm的无偏振深紫外LED，用于水/空气净化、分析科学仪器、生物制剂检测系统和新兴的医疗仪器。虽然基于极面（c平面）的深紫外设备能够渗透一些利基市场，但输出功率远低于渗透最大的紫外细分市场所需的功率。无偏振、半极性的深紫外LED具有很大的潜力来克服目前极性紫外LED在系统集成方面所面临的问题。更广泛的影响是非常重要的，因为该计划将在南卡罗来纳州创造高科技就业机会。拟议的研究活动还将有助于支持哥伦比亚的南卡罗来纳州大学的研究。 所创造的知识将得到广泛传播。 这些资金将为代表性不足的群体提供学习机会。此外，深UVLED在空气-水净化中的应用将为社会带来巨大的利益。 因此，所提出的技术本质上是变革性的。