EAGER: Quantum Manufacturing: 3D Microfabricated Ion Traps

工程量子设备有望给通信、传感和计算带来革命性的变化，但如果这些系统要对现实世界的问题有用，它们的大小必须增加几个数量级。特别值得一提的是，囚禁原子离子是量子信息处理的主要平台。这些离子被捕获在直流和射频电势中，由激光控制，并进行光学测量。然而，目前的离子捕获方法面临着可伸缩性和陷阱质量(例如，陷阱电位的深度和一致性)之间的权衡。这项早期概念探索研究(AGER)量子制造奖支持开发一种新的离子陷阱架构，在不牺牲可制造性的情况下提供电气和光学控制。将探索硅制造技术，以创造增加光学访问的电极，多晶片对准和键合工艺将提高陷阱质量，并将直接制造薄聚焦光学元件并与陷阱电极对准。这些进步将使捕获、控制和测量数以千计的单个离子跨越厘米级的设备成为可能。这项工作代表了定义囚禁离子量子计算机制造过程的第一步。此外，不断增长的量子行业将需要一支训练有素的劳动力来设计、制造和测试这些下一代设备。通过参与研究，学生将接受相关技能的培训，并培养量子素养。将特别努力通过与华盛顿大学现有的努力一起扩大代表不足人群的参与。该项目旨在开发一种制造工艺，能够可靠地将高保真、可扩展的量子计算所需的电气和光学组件与囚禁离子集成在一起，缩小陷阱特性和设计可扩展性之间的差距。研究将集中在开发一种可重复制造的离子陷阱工艺，同时具有高陷阱深度、电压效率和光学访问。先进硅制造技术的研究和开发将实现悬垂电极和背面布线。多层晶片陷阱将提供高质量的陷阱潜力，静电模拟将告知制造公差。最后，将设计用于改进收集和控制的平面聚焦光学器件，并通过在晶片捕获电极两侧的手柄晶片上直接图案化来将其光刻对准电极。该奖项反映了NSF的法定使命，并通过使用基金会的智力优势和更广泛的影响审查标准进行评估，被认为值得支持。

Engineered quantum devices promise to revolutionize communication, sensing, and computation, but these systems must increase in size by orders of magnitude if they are to be useful for real-world problems. In particular, trapped atomic ions are a leading platform for quantum information processing. These ions are trapped in dc and rf electric potentials, controlled with lasers, and measured optically. However, current approaches to ion trapping face a tradeoff between scalability and trap quality (e.g., the depth and uniformity of the trapping potential). This EArly-concept Grant for Exploratory Research (EAGER) Quantum Manufacturing award supports development of a new ion trap architecture providing both electrical and optical control, without sacrificing manufacturability. Silicon fabrication techniques will be explored to create electrodes that increase optical access, a multi-wafer alignment and bonding process will improve trap quality, and thin focusing optics will be directly fabricated and aligned with the trapping electrodes. These advancements will enable trapping, controlling, and measuring thousands of individual ions across a centimeter-scale device. This work represents the first steps towards defining the manufacturing process for a trapped ion quantum computer. Additionally, the growing quantum industry will need a trained workforce to design, build, and test these next-generation devices. By participating in the research, students will be trained in pertinent skills and develop a quantum literacy. Special effort will be made to broaden participation of underrepresented populations by joining with existing efforts at the University of Washington.This project aims to develop a manufacturing process capable of reliably integrating electrical and optical components necessary for high fidelity, scalable quantum computing with trapped ions, closing the gap between the trapping characteristics and the scalability of the design. Research will focus on development of a reproducible fabrication process for ion traps with simultaneously high trap depth, voltage efficiency, and optical access. Research in and development of advanced Silicon fabrication techniques will achieve overhanging electrodes and backside routing. Multi-layer wafer traps will provide high quality trapping potentials, and electrostatic simulations will inform manufacturing tolerances. Finally, planar focusing optics for improved collection and control will be designed and lithographically aligned to electrodes by direct patterning of handle wafer on either side of the wafer trapping electrodes.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.