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Silicon LPCVD Facility for Nanoelectronics, Quantum Computing & Solar Cells

Silicon LPCVD Facility for Nanoelectronics, Quantum Computing & Solar Cells
用于纳米电子学、量子计算的硅 LPCVD 设施
批准号:
LE160100062
负责人:
Prof Andrew Dzurak
金额:
$46.68万
依托单位国家:
澳大利亚
项目类别:
Linkage Infrastructure, Equipment and Facilities
财政年份:
2016
资助国家:
澳大利亚
项目状态:
已结题
起止时间:
2016-01-01 至 2019-12-31

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中文摘要
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英文摘要
Silicon low-pressure chemical vapor deposition facility: This project aims to complete Australia’s first manufacturing line for nanoscale devices. It aims to establish a low-pressure chemical vapour deposition system to complete the existing silicon complementary metal-oxide semiconductor process line. It is currently impossible to fabricate many devices compatible with industrial manufacture, limiting device reliability and path to commercialisation. The tool is designed to incorporate four furnace tubes for growing thin layers of electronic materials, including polycrystalline-silicon, epitaxial silicon, and silicon-nitride. One unique aspect will be growth of isotopically-enriched silicon-28 that is essential for spin-based quantum computing. The tool would support a wide range of projects nationally in silicon micro/nano-systems, advanced photovoltaics, and quantum technologies.
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The CMOS Quantum Processor: A path to scalable quantum computing
  • 批准号:
    FL190100167
  • 项目类别:
    Australian Laureate Fellowships
  • 资助金额:
    $200.39万
  • 财政年份:
    2019
  • 负责人:
    Prof Andrew Dzurak
  • 依托单位:
The Silicon Single Electron Pump: A New World Standard for Electric Current
  • 批准号:
    DP160104923
  • 项目类别:
    Discovery Projects
  • 资助金额:
    $32.92万
  • 财政年份:
    2016
  • 负责人:
    Prof Andrew Dzurak
  • 依托单位:
Epitaxial growth facility for advanced materials
  • 批准号:
    LE120100188
  • 项目类别:
    Linkage Infrastructure, Equipment and Facilities
  • 资助金额:
    $66.68万
  • 财政年份:
    2013
  • 负责人:
    Prof Andrew Dzurak
  • 依托单位:
Single electron pumping for current measurement standards
  • 批准号:
    DP120104710
  • 项目类别:
    Discovery Projects
  • 资助金额:
    $31.45万
  • 财政年份:
    2012
  • 负责人:
    Prof Andrew Dzurak
  • 依托单位:
国内基金
海外基金
基于LPCVD Si3N4双层叠栅结构的GaN MISHEMT栅可靠性研究
  • 批准号:
    62104067
  • 项目类别:
    青年科学基金项目(C类)
  • 资助金额:
    30.0万元
  • 批准年份:
    2021
  • 负责人:
    陶明
  • 依托单位:
LPCVD-HfC纳米线改性C/C复合材料的制备工艺规律及其抗烧蚀机理
  • 批准号:
    51502028
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    21.0万元
  • 批准年份:
    2015
  • 负责人:
    田松
  • 依托单位:
在垂直冷壁LPCVD反应器中外延生长优质单晶SiC薄膜
  • 批准号:
    50372063
  • 项目类别:
    面上项目
  • 资助金额:
    23.0万元
  • 批准年份:
    2003
  • 负责人:
    王玉霞
  • 依托单位: