Full photon statistics of collective effects in semiconductor nanostructures

嵌入到光学微腔中的半导体纳米结构对于腔增强型纳米光子器件的基础研究及其未来的应用，例如在光子量子技术中都具有极大的兴趣。研究和理解少光子操作和集体效应不仅需要分析发射光的强度，还需要分析二阶光子的自相关函数。这两个量构成了光子统计的前两个矩。对于全面的表征和理解，能够访问完整的光子统计信息是非常有益的，这相当于了解所有时刻。利用光子数分辨跃迁边缘传感器，我们打算测量和理论分析特殊设计的半导体量子点系统的全光子统计特性，这些系统表现出集体效应：(I)均匀介质和光学微柱中的超辐射量子点；(Ii)具有量子点增益的双模微柱激光器。在这两种情况下，我们都应用了一种先进的确定性生长技术来控制集体发射过程中涉及的量子点的数量和位置。对于后者，我们打算探索光子统计，特别是在所谓的例外点，这是开放系统中最近引起极大关注的光谱奇点。

Semiconductor nanostructures embedded into optical microcavities are of enormous interest both for fundamental research of cavity-enhanced nanophotonic devices and their future applications for instance in photonic quantum technology. The study and understanding of few-photon operation and collective effects require an analysis of not only the emitted light intensity but also the second-order photon autocorrelation function. Both quantities constitute the first two moments of the photon statistics. For a comprehensive characterization and understanding it is highly beneficial to have access to the full photon statistics, which would equivalent of knowing all moments. Using photon-number resolving transition edge sensors we intend to measure and theoretically analyze the full photon statistics of specifically designed semiconductor quantum dot systems exhibiting collective effects: (i) superradiant quantum dots in an homogeneous medium and in optical micropillars and (ii) bimodal micropillar lasers with quantum dot gain. In both cases we apply an advanced deterministic growth technique to control the number and position of the quantum dots involved in the collective emission process. For the latter we intend to explore the photon statistics in particular at a so-called exceptional point, which is a spectral singularity in open systems that attracted great attention recently.