Fabrication of GaAs-based tailored quantum confined semiconductor structures in functional environment (Z01)

在功能环境中制造基于 GaAs 的定制量子限制半导体结构 (Z01)

• 批准号: 269989752
• 金额: --
• 依托单位: Institut für Experimentelle Physik VI: Lehrstuhl Angewandte Festkörperphysik
• 依托单位国家: 德国
• 项目类别: CRC/Transregios
• 财政年份: 2015
• 资助国家: 德国
• 起止时间: 2014-12-31 至 2017-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/269989752?language=en
• 关键词: Fabrication; GaAs; based; tailored; quantum

In this project we will provide tailored GaAs-based ultra-pure semiconducting heterostructures (quantum wells and dots) in functional environments. It is thus the essential material and technology basis of numerous projects in the ICRC, creating custom-tailored systems. For fabrication, rapid thermal annealing and focused ion beam implantation will be combined with molecular beam epitaxy, including In-flush techniques. For characterization photoluminescence, Hall measurements, capacitance-voltage spectroscopy and Fourier transform infrared spectroscopy will be employed. Complementarily doped, monolithic epitaxial gates will control the carrier densities in the heterostructures.

在这个项目中，我们将提供定制的GaAs基超纯半导体异质结构（量子威尔斯和点）的功能环境。因此，它是红十字国际委员会众多项目的重要物质和技术基础，创造了量身定制的系统。对于制造，快速热退火和聚焦离子束注入将结合分子束外延，包括内冲洗技术。用于表征 将采用光致发光、霍尔测量、电容电压光谱和傅里叶变换红外光谱。互补掺杂的单片外延栅极将控制异质结构中的载流子密度。