Fabrication of GaAs-based tailored quantum confined semiconductor structures in functional environment (Z01)

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In this project we will provide tailored GaAs-based ultra-pure semiconducting heterostructures (quantum wells and dots) in functional environments. It is thus the essential material and technology basis of numerous projects in the ICRC, creating custom-tailored systems. For fabrication, rapid thermal annealing and focused ion beam implantation will be combined with molecular beam epitaxy, including In-flush techniques. For characterization photoluminescence, Hall measurements, capacitance-voltage spectroscopy and Fourier transform infrared spectroscopy will be employed. Complementarily doped, monolithic epitaxial gates will control the carrier densities in the heterostructures.