Wireless Indium-Gallium-Zink-Oxide TranSceivers and Devices On Mechanically-Flexible Thin-Film Substrates (W I S D O M II)

在第一阶段，研究了一种完全集成的柔性非晶铟镓锌氧化物（IGZO）薄膜晶体管（TFT）电路技术。这些器件集成在可弯曲的50微米薄聚酰亚胺箔上。对于栅极长度为0.5µm的TFTs，最大振荡频率（fmax）可达300 MHz，传输频率（fT）可达135 MHz。这些结果是箔上IGZO tft的世界纪录值。此外，还设计了栅极长度为2 μ m、更高产率和85/40 MHz fmax/fT的tft，使集成电路至少具有20个晶体管。基于后一种技术，成功地演示和测量了用于数据通信的全集成变送器。它们基于一个开/关键控（OOK）调制器，工作在4 MHz左右，在3 V时仅消耗0.7 mA。此外，我们还设计了一个完全集成的无线可弯曲湿度传感器芯片，设想了智能尿布的应用。该芯片包括传感器、判决电路、OOK发射机、倍频器和天线。开发了可扩展的紧凑模型，该模型在直流和高频特性的测量和模拟之间具有良好的一致性。W I S D O M II（新的第二阶段）的重点将是开发一种完全集成的可弯曲IGZO收发器，工作频率高达100 MHz和1 Mb/ S，由优化的发射器和接收器组成。我们想推工作频率，例如：混合集成我们的高速但产量较低的晶体管，用于速度相关级，最高可达3个tft，以及更高产量但较慢的晶体管，用于需要较低速度的其余电路，最多可达50个tft，发射机中的倍频器（例如× 8），可实现四倍频的正交振荡器，首先是变频器，其次是放大器接收器，以及正反馈，以提高最高频率的增益，同时保持稳定性。此外，我们希望提高TFT速度，例如通过进一步减少栅极长度（例如使用聚焦离子束技术），主动控制掺杂水平和陷阱，以及减少接触寄生。根据FFlexCOM视力我们要表明,无线通信是可能的只用一块可弯曲的塑料薄膜没有刚性芯片构思完整的通信收发器可以很容易地集成在纺织品。

In W I S D O M (first phase) a fully integrated flexible, amorphous Indium-Gallium-Zinc-Oxide (IGZO) thin-film transistor (TFT) circuit technology was developed. The devices are integrated on a bendable 50 µm thin polyimide foil. A maximum frequency of oscillation (fmax) of up to 300 MHz and a transit frequency (fT) of up to 135 MHz were measured for TFTs with gate length of 0.5 µm. These results are world record values for IGZO TFTs on foil. Moreover, TFTs with gate length of 2 µm, higher yield and 85/40 MHz fmax/fT were designed enabling ICs with at least 20 transistors. Based on the latter technology, fully integrated transmitters for data communication are successfully demonstrated and measured. They are based on an on/off keying (OOK) modulator operating around 4 MHz which consumes only 0.7 mA at 3 V. Moreover, a fully integrated wireless bendable moisture sensor chip was designed envisioning e.g. the application for smart diapers. The chip includes the sensor, a decision circuit, an OOK transmitter, a frequency doubler and an antenna. Scalable compact models with good agreement between measured and simulated DC and high frequency characteristics were developed.The focus of W I S D O M II (new, second phase) will be on the development of a fully integrated bendable IGZO transceiver operating up to 100 MHz and 1 Mb/s, which consists of an optimized transmitter and receiver. We want to push the operating frequencies e.g. by: hybrid integration of our high speed but lower yield transistors for the speed relevant stages with up to 3 TFTs and the higher yield but slower transistors for the rest of the circuits requiring lower speed with up to 50 TFTs, frequency multipliers (e.g. × 8) in transmitters, quadrature oscillators enabling frequency quadruplication, frequency converter first and amplifier second receivers, and positive feedback to boost gain at highest frequencies while maintaining stability. Moreover, we want to improve the TFT speed, e.g. by further reduction of the gate length (e.g. with focussed ion beam techniques), active control of doping levels and traps, as well as reduction of contact parasitics. According to the FFlexCOM vision we want to show that wireless communication is possible using just a piece of bendable plastic foil without any rigid chips envisioning full communication transceivers which can be easily integrated in textiles.