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Automatic Impedance Matching Control Concepts for Sub-THz Amplifiers

Automatic Impedance Matching Control Concepts for Sub-THz Amplifiers
亚太赫兹放大器的自动阻抗匹配控制概念
批准号:
254847389
负责人:
Professor Dr.-Ing. Frank Ellinger
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2014
资助国家:
德国
项目状态:
已结题
起止时间:
2013-12-31 至 2016-12-31

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中文摘要
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英文摘要
AIM studies novel approaches for the control of the small signal impedance matching of amplifiers operating up to sub-THz frequencies (100-300 GHz). To enable full integration of the control unit and the amplifier on a single chip, we explore novel concepts, which require e.g. only one test frequency for the self-calibration to get maximum gain. The automatic control shall enable higher yield and performance, lower costs, simpler design and multi-standard operation for sub-THz circuits. Accordingly, the impedance matching networks and impedance control devices are investigated and optimized. Theories and models are extended regarding the effects and losses arising at such high frequencies. Very fast BiCMOS technology is applied for the verification of the concepts.
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会议论文
A wideband square-law power detector with high dynamic range and combined logarithmic amplifier for 100 GHz F-Band in 130 nm SiGe BiCMOS
宽带平方律功率检测器,具有高动态范围和组合对数放大器,适用于 130 nm SiGe BiCMOS 中的 100 GHz F 频段
DOI: 10.1109/bctm.2017.8112924
发表时间: 2017
期刊: 2017 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
影响因子: --
作者: [P. Stärke, V. Rieß, D. Fritsche, C. Carta, F. Ellinger]
通讯作者: F. Ellinger
DOI: 10.1109/lmwc.2017.2724006
发表时间: 2017-07
期刊: IEEE Microwave and Wireless Components Letters
影响因子: 3
作者: [Paul Stärke;D. Fritsche;C. Carta;F. Ellinger]
通讯作者: Paul Stärke;D. Fritsche;C. Carta;F. Ellinger
170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier
170 GHz SiGe-BiCMOS 损耗补偿分布式放大器
DOI: 10.1109/jssc.2015.2444878
发表时间: 2015
期刊: IEEE Journal of Solid-State Circuits
影响因子: 5.4
作者: [P. V. Testa, G. Belfiore, R. Paulo, C. Carta, F. Ellinger]
通讯作者: F. Ellinger
A 173–200 GHz quadrature voltage-controlled oscillator in 130 nm SiGe BiCMOS
采用 130 nm SiGe BiCMOS 的 173â200 GHz 正交压控振荡器
DOI: 10.1109/asscc.2017.8240225
发表时间: 2017
期刊: 2017 IEEE Asian Solid-State Circuits Conference (A-SSCC)
影响因子: --
作者: [P. Stärke, V. Rieß, C. Carta, F. Ellinger]
通讯作者: F. Ellinger
6
    Low-loss on-chip resonators enabling high-performance amplifiers and oscillators
    • 批准号:
      426291622
    • 项目类别:
      Research Grants
    • 资助金额:
      $0.0万
    • 财政年份:
      2019
    • 负责人:
      Professor Dr.-Ing. Frank Ellinger
    • 依托单位:
    Adaptive Millimetre-wave Integrated TranSmitters
    Electronic-Photonic Integrated Digital-to-Analogue Converter
    Bendable wireless sensors and millimetre-wave transmitters using thinned SiGe BiCMOSAcronym: Bend-IT
    海外基金