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Fastest Digital-to-Analog-Converter with low power consumption in FDSOI-CMOS Technology for Ultra-Broadband Data Transmission

Fastest Digital-to-Analog-Converter with low power consumption in FDSOI-CMOS Technology for Ultra-Broadband Data Transmission
采用 FDSOI-CMOS 技术的低功耗最快数模转换器,用于超宽带数据传输
批准号:
276016065
负责人:
Professor Dr.-Ing. Manfred Berroth
金额:
$0.0万
依托单位国家:
德国
项目类别:
Research Grants
财政年份:
2015
资助国家:
德国
项目状态:
已结题
起止时间:
2014-12-31 至 2021-12-31

项目摘要

项目成果

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中文摘要
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英文摘要
In the first project period of two years with the topic “Ultrafast digital-to-analog converters in FDSOI CMOS for ultra-broadband communication” new circuit topologies for ultrafast and high bandwidth digital-to-analog converters (DACs) in CMOS technology have been investigated. The research activities culminated in the design of a 128 GS/s 8 bit DAC demonstrator IC including a 256 kByte on-chip memory in a 28 nm FDSOI CMOS technology which has been assigned for tape-out.Concerning new topologies, a voltage-based 8 bit segmented DAC core with conversion rates up to 64 GS/s has to be mentioned at first. The DAC output consists of 15 unary output stages for the four MSBs and a binary weighted network for the four LSBs. One unary output stage consists of a CMOS inverter and a series resistance. The binary weighted part consists of four CMOS inverters and a four-stage R-2R network. The implemented DAC core shows the feasibility of ultrafast DAC cores in a voltage-based concept, and may replace traditional current-based approaches that need larger supply voltages. The low supply voltage of slightly above 1 V is the main advantage of this new architecture and is compatible with the core CMOS logic supply voltage. The power dissipation of the 64 GS/s core is only around 1,17 W. Another important innovative concept that is required for the realization of the 64 Gbit/s driver chains and the 32 GHz clock paths are CMOS inverter based driver chains with resistive negative feedback to increase the bandwidth. The second key component of the demonstrator IC is an analog multiplexer (AMUX) combining the output signals of the two 64 GS/s DAC cores by time interleaving to a single 128 GS/s output. Such a fast AMUX has been realized for the first time in CMOS technology within this project.In case of a successful demonstration of the 128 GS/s conversion rate, this IC would be the fastest monolithic electronic DAC to the best of the authors’ knowledge. Furthermore, the predicted output bandwidth of 32 GHz would be the highest one ever demonstrated in CMOS technology.The first aim of the project continuation is to start operation of the DAC and to characterize in detail the different parts of the IC and the output signal quality. As there are different linear and nonlinear effects in the implemented DAC chip which distort the output signal and reduce resolution, distortion compensation procedures shall be investigated and implemented to increase performance. Finally, different applications of the AWG module shall be demonstrated by applying these compensation methods. A broad spectrum of applications ranging from very broadband optical link signals to micro- and mm-wave signals, e.g. for mobile and data communication of the 5th generation (5G), will be demonstrated during this project.
期刊论文(2)
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会议论文
Multi-Phase Clock Path Circuit up to 57 GHz Including 5 bit Programmable Phase Interpolators for Time-Interleaved Broadband Data Converters in a 28 nm FD-SOI CMOS Technology
高达 57 GHz 的多相时钟路径电路,包括用于采用 28 nm FD-SOI CMOS 技术的时间交错宽带数据转换器的 5 位可编程相位内插器
DOI: 10.23919/eumic50153.2022.9783934
发表时间: 2021
期刊: 2021 16th European Microwave Integrated Circuits Conference (EuMIC)
影响因子: --
作者: [D. Widmann, T. Tannert, X.-Q. Du, M. Grözing, M. Berroth]
通讯作者: M. Berroth
High-Speed Serializer for a 64 GS s−1 Digital-to-Analog Converter in a 28 nm Fully-Depleted Silicon-on-Insulator CMOS Technology
适用于采用 28 nm 全耗尽绝缘体上硅 CMOS 技术的 64âGSâsâ1 数模转换器的高速串行器
DOI: 10.5194/ars-16-99-2018
发表时间: 2018
期刊: Advances in Radio Science
影响因子: 0.4
作者: [D. Widmann, M. Gözing, M. Berroth]
通讯作者: M. Berroth
Radio frequency multilevel switching mode power amplifiers with pulse-position and pulse-width modulation for efficient power amplification of broadband mobile communication signals
Tailored nanostructures and thin-film-processing for temperature stable organic silicon-hybrid-modulators
Electronic Analog Multiplexer for High-Speed Communication Systems (ELAMUR)
Selective optical sensor arrays in a silicon hybrid platform (SOSAS)
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