Honeycomb nitrides layers as playground for Xenes formation
Honeycomb nitrides layers as playground for Xenes formation
批准号:
21K04883
负责人:
Anton V.Visikovs
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2021
资助国家:
日本
项目状态:
已结题
起止时间:
2021-04-01 至 2024-03-31
中文摘要
(1)在本研究期间,我们成功地在SiC(0001)表面生长了蜂窝状二维氮化硅层。通过低能电子衍射(LEED)分析确定了表面结构,并与先前的计算预测相吻合。扫描隧道显微镜(STM)测量结果也证实了这一结果。(2)根据研究计划,我们还打算尝试用相邻的台阶状SiC表面生长纳米结构。在此基础上,我们研究了邻近碳化硅的形态和阶跃动力学。这伴随着石墨烯在表面生长的研究。(3)新的计算方法(具有未展开带结构计算的紧密结合模型)正在开发中,以加深认识。
英文摘要
(1) During this research period we have successfully grown honeycomb 2D silicon nitride layer on SiC(0001) surface. The structure of the surface has been determined by low-energy electron diffraction (LEED) analysis and match the one previously predicted by calculation. The results are also confirmed by scanning-tunneling microscopy (STM) measurements.(2) According to research plan we intended also to try the growth of nanostructures using vicinal stepped surfaces of SiC. In anticipation of it, we have investigated the morphology and step dynamics of vicinal SiC. This was accompanied with study of graphene growth on the surface.(3) New computational approaches (tight-binding models with unfolded band structure calculations) are in development to deepen insights.
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