Honeycomb nitrides layers as playground for Xenes formation
Honeycomb nitrides layers as playground for Xenes formation
批准号:
21K04883
负责人:
Anton V.Visikovs
金额:
$2.75万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2021
资助国家:
日本
项目状态:
已结题
起止时间:
2021-04-01 至 2024-03-31
中文摘要
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英文摘要
(1) During this research period we have successfully grown honeycomb 2D silicon nitride layer on SiC(0001) surface. The structure of the surface has been determined by low-energy electron diffraction (LEED) analysis and match the one previously predicted by calculation. The results are also confirmed by scanning-tunneling microscopy (STM) measurements.(2) According to research plan we intended also to try the growth of nanostructures using vicinal stepped surfaces of SiC. In anticipation of it, we have investigated the morphology and step dynamics of vicinal SiC. This was accompanied with study of graphene growth on the surface.(3) New computational approaches (tight-binding models with unfolded band structure calculations) are in development to deepen insights.
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