Honeycomb nitrides layers as playground for Xenes formation

蜂窝氮化物层作为 Xenes 形成的游乐场

• 批准号: 21K04883
• 负责人: Anton V.Visikovs
• 金额: $ 2.75万
• 依托单位: Kyushu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2021
• 资助国家: 日本
• 起止时间: 2021-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21K04883/
• 关键词: 2D materials; silicon carbide; honeycomb lattice; spin-orbit interaction; surface physics; 2D material; nitride; SiC; spintronics

(1) During this research period we have successfully grown honeycomb 2D silicon nitride layer on SiC(0001) surface. The structure of the surface has been determined by low-energy electron diffraction (LEED) analysis and match the one previously predicted by calculation. The results are also confirmed by scanning-tunneling microscopy (STM) measurements.(2) According to research plan we intended also to try the growth of nanostructures using vicinal stepped surfaces of SiC. In anticipation of it, we have investigated the morphology and step dynamics of vicinal SiC. This was accompanied with study of graphene growth on the surface.(3) New computational approaches (tight-binding models with unfolded band structure calculations) are in development to deepen insights.

（1）在这一研究期间，我们成功地种植了SIC（0001）表面上的Honeycomb 2D氮化硅层。表面的结构已通过低能电子衍射（LEED）分析确定，并与先前通过计算预测的分析相匹配。 （2）根据研究计划，我们还旨在使用SIC的替代阶梯表面尝试纳米结构的生长，还可以通过扫描接触显微镜（STM）测量来证实结果。考虑到这一点，我们已经研究了阴道SIC的形态和步骤动力学。这伴随着对表面上石墨烯生长的研究。（3）开发的新计算方法（具有未折叠带结构计算的紧密结合模型）正在加深见解。