Honeycomb nitrides layers as playground for Xenes formation

蜂窝氮化物层作为 Xenes 形成的游乐场

• 批准号: 21K04883
• 负责人: Anton V.Visikovs
• 金额: $ 2.75万
• 依托单位: Kyushu University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2021
• 资助国家: 日本
• 起止时间: 2021-04-01 至 2024-03-31
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-21K04883/
• 关键词: 2D materials; silicon carbide; honeycomb lattice; spin-orbit interaction; surface physics; 2D material; nitride; SiC; spintronics

(1) During this research period we have successfully grown honeycomb 2D silicon nitride layer on SiC(0001) surface. The structure of the surface has been determined by low-energy electron diffraction (LEED) analysis and match the one previously predicted by calculation. The results are also confirmed by scanning-tunneling microscopy (STM) measurements.(2) According to research plan we intended also to try the growth of nanostructures using vicinal stepped surfaces of SiC. In anticipation of it, we have investigated the morphology and step dynamics of vicinal SiC. This was accompanied with study of graphene growth on the surface.(3) New computational approaches (tight-binding models with unfolded band structure calculations) are in development to deepen insights.

(1)在本研究期间，我们成功地在碳化硅(0001)表面生长了蜂窝状2D氮化硅薄膜。通过低能电子衍射(LEED)分析确定了表面的结构，并与先前通过计算预测的结构相吻合。这一结果也得到了扫描隧道显微镜(STM)测量的证实。(2)根据研究计划，我们还打算尝试利用邻近的阶梯状表面生长纳米结构。在此基础上，我们研究了邻近碳化硅的形貌和台阶动力学。伴随着对石墨烯在表面生长的研究。(3)新的计算方法(紧束缚模型和展开的能带结构计算)正在开发中，以深化对石墨烯的认识。