Correlated topological insulators: spectroscopic investigations combined with band structure calculations.

相关拓扑绝缘体：光谱研究与能带结构计算相结合。

• 批准号: 324108392
• 负责人: Dr. Andrea Severing
• 金额: --
• 依托单位: Max-Planck-Institut für Chemische Physik fester Stoffe (MPI CPfS)
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2017
• 资助国家: 德国
• 起止时间: 2016-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/324108392?language=en
• 关键词: Correlated; topological; insulators; spectroscopic; investigations

Topological insulators form a novel state of matter providing new opportunities for novel quantum phenomena as well as original spintronics applications. Topological insulators have an insulating bulk and due to topological considerations necessarily a metallic surface with surface charge carriers that are protected against backscattering by time reversal symmetry. So far only semiconductors were considered to exhibit this behavior but recent theoretical studies predict that also strongly correlated systems can show nontrivial topological properties, thereby allowing the emergence of surface phenomena with even more exotic properties. The challenge is now to discover such correlated materials. Theory suggests that Kondo insulators are promising candidates for exhibiting topological nontrivial surface states. Subject of this project is to find out whether Kondo insulators which are known today fulfill the conditions for nontrivial topology. We will achieve this by investigating the bulk with modern x-ray methods and combine it with band structure calculations using the notion that the topological nature of the surface is a bulk property.

拓扑绝缘体形成了一种新的物质状态，为新的量子现象和原始的自旋电子学应用提供了新的机会。拓扑绝缘体具有绝缘体块，并且由于拓扑考虑，必须具有具有表面电荷载流子的金属表面，所述表面电荷载流子通过时间反转对称性被保护免受背散射。到目前为止，只有半导体被认为表现出这种行为，但最近的理论研究预测，强关联系统也可以表现出非平凡的拓扑性质，从而允许出现具有更奇异性质的表面现象。现在的挑战是发现这种相关材料。理论表明，近藤绝缘体是表现出拓扑非平凡表面态的有希望的候选者。本计画的主题是要找出目前已知的近藤绝缘子是否满足非平凡拓扑的条件。我们将实现这一点，通过调查与现代X射线方法的散装和联合收割机它与带结构计算使用的概念，即拓扑性质的表面是一个散装财产。

项目成果

4f Crystal Field Ground State of the Strongly Correlated Topological Insulator SmB_{6}.

• DOI: 10.1103/physrevlett.120.016402
• 发表时间: 2017-06
• 期刊: Physical review letters
• 影响因子: 8.6
• 作者: M. Sundermann;Hasan Yavacs;Kai-bao Chen;Dae-Jeong Kim;Z. Fisk;D. Kasinathan;M. Haverkort;P. Thalmeier-P