Experimental characterization and modeling of most advanced Silicon-Germanium HBT technologies from 4 K to 423 K
最先进的硅-锗 HBT 技术(4 K 至 423 K)的实验表征和建模
基本信息
- 批准号:377861290
- 负责人:
- 金额:--
- 依托单位:
- 依托单位国家:德国
- 项目类别:Research Grants
- 财政年份:
- 资助国家:德国
- 起止时间:
- 项目状态:未结题
- 来源:
- 关键词:
项目摘要
Recent technology development of silicon-germanium-carbon (SiGeC) heterojunction bipolar transistors (HBTs) has led to maximum operating frequencies of 500 GHz and beyond at 1.6 V breakdown voltage (BVCEO) even for industry prototyping processes. BiCMOS technology, resulting from combining high-speed HBT circuits with moderate-cost digital CMOS, has enabled a large variety of commercial and emerging mm- and sub-mm-wave applications, such as broadband wireless communications, imaging and sensing. SiGeC HBTs have increasingly also found their way into applications operating under extreme conditions in terms of bias and temperatures. Many explorations in space, material physics, chemistry, and technology development benefit from operating electronic circuits and devices at cryogenic temperatures. In particular, SiGeC HBTs have been shown to operate at 4 K with significantly improved performance which has made them attractive for emerging applications such as quantum computing, where speed can be traded for lower noise and energy efficiency. Unfortunately, models for the design of cryogenic high-frequency (HF) circuits do presently not exist. In the first phase of this project the suitability of the existing HBT compact model was experimentally demonstrated for the temperature range of 150 K to 423 K, and first low-temperature measurements revealed serious model deficiencies in the range of 4 K to 150 K. The main objectives of this second phase of the project thus address both these deficiencies and the increasing need for accurate models for emerging low-temperature applications: (1) Theory development for and simulator implementation of a physics-based geometry scalable non-linear compact model for SiGeC HBTs that accurately captures the operation at low (including cryogenic) temperatures from 4 K to 150 K with special emphasis on the saturation region for extremely low-power mm-wave applications. (2) Design and fabrication of test chips with HBTs and passive devices (relevant to mm-wave circuits) for model parameter determination as well as with selected circuit building blocks for cryogenic applications and model verification. (3) Experimental DC and HF characterization of high-speed and high-voltage SiGeC HBTs, fabricated with different advanced process technologies, versus bias, frequency, and geometry in the temperature range of 4 K to 150 K for compact model verification and parameter extraction. The results of this project enable mm- and sub-mm-wave circuit and system design for emerging applications operating at low and, in particular, cryogenic temperatures. The developed model will be used, among others, by IHP customers, such as Google and MIT, for designing circuits for quantum computing.
硅-锗-碳(SiGeC)异质结双极晶体管(HBT)的最新技术发展已经导致即使对于工业原型工艺,在1.6 V击穿电压(BVCEO)下的最大工作频率也达到500 GHz及以上。BiCMOS技术是将高速HBT电路与中等成本的数字CMOS相结合而产生的,它已经实现了各种商业和新兴的毫米波和亚毫米波应用,例如宽带无线通信、成像和传感。SiGeC HBT也越来越多地进入在偏置和温度方面的极端条件下工作的应用。许多太空探索、材料物理、化学和技术发展都受益于在低温下操作电子电路和设备。特别是,SiGeC HBT已被证明在4K下工作,性能显著提高,这使得它们对量子计算等新兴应用具有吸引力,在这些应用中,速度可以换取更低的噪声和能效。不幸的是,目前还不存在用于设计低温高频(HF)电路的模型。 在该项目的第一阶段,现有的HBT紧凑型模型的适用性进行了实验证明的温度范围为150 K至423 K,第一次低温测量发现严重的模型缺陷的范围为4 K至150 K。因此,该项目第二阶段的主要目标是解决这些缺陷以及对新兴低温应用的准确模型的日益增长的需求:(1)SiGeC HBT的基于物理学的几何可缩放非线性紧凑模型的理论开发和模拟器实现,该模型准确地捕获在低电压下的操作。(包括低温)温度从4 K到150 K,特别强调极低功率毫米波应用的饱和区。(2)设计和制造带有HBT和无源器件(与毫米波电路相关)的测试芯片,用于模型参数确定,以及用于低温应用和模型验证的选定电路构建模块。(3)在4 K至150 K的温度范围内,对采用不同先进工艺技术制造的高速和高压SiGeC HBT进行直流和高频特性实验,并对偏置、频率和几何结构进行分析,以进行紧凑的模型验证和参数提取。 该项目的结果使毫米波和亚毫米波电路和系统设计的新兴应用在低,特别是低温下运行。开发的模型将被谷歌和麻省理工学院等IHP客户用于设计量子计算电路。
项目成果
期刊论文数量(0)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
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Professor Dr.-Ing. Michael Schröter其他文献
Professor Dr.-Ing. Michael Schröter的其他文献
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{{ truncateString('Professor Dr.-Ing. Michael Schröter', 18)}}的其他基金
HBT modeling and circuit design for low-power mm-wave applications
低功耗毫米波应用的 HBT 建模和电路设计
- 批准号:
285829242 - 财政年份:2016
- 资助金额:
-- - 项目类别:
Research Grants
Theoretical and experimental exploration of InP heterojunction bipolar transistor (HBT) characteristics for device and circuit design
用于器件和电路设计的 InP 异质结双极晶体管 (HBT) 特性的理论和实验探索
- 批准号:
110304428 - 财政年份:2009
- 资助金额:
-- - 项目类别:
Research Grants
Theoretical and experimental investigation of advanced SiGe HBTs under extreme operating conditions and compact model development
极端工作条件下先进 SiGe HBT 的理论和实验研究以及紧凑模型开发
- 批准号:
21377206 - 财政年份:2006
- 资助金额:
-- - 项目类别:
Research Grants
Theoretical an experimental investigation of noise in advanced SiGe BiCMOS process technologies
先进 SiGe BiCMOS 工艺技术中噪声的理论和实验研究
- 批准号:
5445768 - 财政年份:2005
- 资助金额:
-- - 项目类别:
Research Grants
Exploration of SiGe HBTs for power amplifiers in the 200 GHz to 500 GHz frequency range
200 GHz 至 500 GHz 频率范围内功率放大器的 SiGe HBT 探索
- 批准号:
462053628 - 财政年份:
- 资助金额:
-- - 项目类别:
Research Grants
Investigation of the long-term degradation of the high-frequency behavior of SiGe heterojunction bipolar transistors and circuits
SiGe异质结双极晶体管和电路高频行为长期退化的研究
- 批准号:
391631565 - 财政年份:
- 资助金额:
-- - 项目类别:
Research Grants
Experimental characterization and compact modeling of high-field effects in CNTFET channels
CNTFET 通道中高场效应的实验表征和紧凑建模
- 批准号:
464113502 - 财政年份:
- 资助金额:
-- - 项目类别:
Research Grants
Compact Modeling and Device Simulation of TerahertzInGaAs/InP Heterojunction Bipolar Transistors
太赫兹InGaAs/InP异质结双极晶体管的紧凑建模和器件仿真
- 批准号:
438512651 - 财政年份:
- 资助金额:
-- - 项目类别:
Research Grants
Ultra-scaled SiGeC HBTs beyond the existing roadmap - A simulation based study
超越现有路线图的超大规模 SiGeC HBT - 基于模拟的研究
- 批准号:
466103046 - 财政年份:
- 资助金额:
-- - 项目类别:
Research Grants
Modeling of non-linear large-signal dynamic effects in SiGe heterojunction bipolar transistors
SiGe 异质结双极晶体管非线性大信号动态效应建模
- 批准号:
317219111 - 财政年份:
- 资助金额:
-- - 项目类别:
Research Grants
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