HBT modeling and circuit design for low-power mm-wave applications

低功耗毫米波应用的 HBT 建模和电路设计

• 批准号: 285829242
• 负责人: Professor Dr.-Ing. Michael Schröter
• 金额: --
• 依托单位: Professur für Elektronische Bauelemente und Integrierte Schaltungen
• 依托单位国家: 德国
• 项目类别: Research Grants
• 财政年份: 2016
• 资助国家: 德国
• 起止时间: 2015-12-31 至 2019-12-31
• 项目状态: 已结题
• 来源: https://gepris.dfg.de/gepris/projekt/285829242?language=en
• 关键词: HBT; modeling; circuit; design; low

The increasing demand for bandwidth (and higher carrier frequency) not only in mobile devices but also in densely packed processor arrays in data servers requires power efficient operation of the associated high-frequency front-end. Recent technology developments have led to transistor power gain cut-off frequencies (fmax) of 500 GHz for SiGe HBTs and up to 1 THz for InP HBTs, while maintaining reasonable transit frequency values of 300 GHz and 560 GHz, respectively. Such technologies are enabling emerging commercial mm-wave (and even sub-mm-wave) applications in the field of communications and sensing.This project aims at utilizing the high speed of advanced HBT technologies for significantly reducing the power consumption in mm-wave circuits by operating the transistors (partially) in deep saturation. The related work will comprise the design, fabrication and measurement of low-power mm-wave circuits with emphasis on the optimization for and exploration of the minimum possible supply voltage and power dissipation for a given operating frequency (94 GHz) under the constraint of meeting at least minimum specifications for other relevant figures of merit (such as linearity, noise, gain etc.). Since for the mentioned advanced prototyping HBT technologies saturation is not being properly considered and covered by existing compact models, the circuit design work is supported by physics-based geometry scalable compact model development for both SiGe and InP HBTs. The developed model will enable the above mentioned circuit optimization and the exploration (of the possible use) of special physical effects in mm-wave circuits.

不仅在移动的设备中，而且在数据服务器中密集封装的处理器阵列中，对带宽（和更高的载波频率）的需求不断增加，这要求相关联的高频前端的功率高效操作。最近的技术发展使得SiGe HBT的晶体管功率增益截止频率（fmax）为500 GHz，InP HBT的截止频率高达1 THz，同时分别保持300 GHz和560 GHz的合理渡越频率值。该项目旨在利用先进HBT技术的高速性，通过使晶体管（部分）处于深度饱和状态，显著降低毫米波电路的功耗。相关工作将包括低功率毫米波电路的设计、制造和测量，重点是在满足其他相关品质因数（如线性度、噪声、增益等）的最低规格的约束下，优化和探索给定工作频率（94 GHz）的最小可能电源电压和功耗。由于对于所提到的先进原型HBT技术，饱和没有被适当地考虑并且被现有紧凑模型覆盖，因此电路设计工作由SiGe和InP HBT的基于物理的几何可缩放紧凑模型开发支持。所开发的模型将使上述电路优化和探索（可能的用途）的特殊物理效应的毫米波电路。

项目成果

3.2-mW Ultra-Low-Power 173–207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation

• DOI: 10.1109/jssc.2019.2959510
• 发表时间: 2020-06
• 期刊: IEEE Journal of Solid-State Circuits
• 影响因子: 5.4
• 作者: Yaxin Zhang;W. Liang;Xiaodi Jin;Mario Krattenmacher;Sophia Falk;P. Sakalas;B. Heinemann;M. Schröter

Modeling High-Current Effects in Bipolar Transistors: A Theory Review

双极晶体管中高电流效应的建模：理论回顾

• DOI: 10.1109/bcicts.2018.8551078
• 发表时间: 2018
• 期刊: 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
• 作者: M. Schröter;S. Falk
• 通讯作者: S. Falk

96 GHz 4.7 mW low-power frequency tripler with 0.5 V supply voltage

96GHz 4.7mW 低功耗频率三倍频器，电源电压为 0.5V

• DOI: 10.1049/el.2017.2523
• 发表时间: 2017
• 期刊: Electronics Letters
• 影响因子: 1.1
• 作者: W. Liang;A. Mukherjee;P. Sakalas;A. Pawlak;M. Schröter
• 通讯作者: M. Schröter

12-mW 97-GHz Low-Power Downconversion Mixer With 0.7-V Supply Voltage

具有 0 7V 电源电压的 12mW 97GHz 低功耗下变频混频器

• DOI: 10.1109/lmwc.2019.2901410
• 发表时间: 2019
• 期刊: IEEE Microwave and Wireless Components Letters
• 影响因子: 3
• 作者: Y. Zhang;W. Liang;P. Sakalas;A. Mukherjee;X. Jin;J. Krause;M. Schröter
• 通讯作者: M. Schröter

82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency

使用双平衡 Gilbert 单元的 82 GHz 直接上变频混频器，并在毫米波频率下进行灵敏度分析

• DOI: 10.1109/bcicts45179.2019.8972765
• 发表时间: 2019
• 期刊: 2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
• 作者: A. Omar;A. Mukherjee;W. Liang;Y. Zhang;P. Sakalas;M. Schröter
• 通讯作者: M. Schröter