Electric field assited magnetization switching and development of efficient memory devices

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Temperature dependence of the critical current density of spin transfer torque switching for the CPP-GMR device with rare earth - transition metal alloys has been investigated to show the possibility of the energy efficient writing by controlling the energy barrier of the magnetization switching, and the reduction of the critical current density with temperature was confirmed. Moreover, the ultra-thin Co films were micro-fabricated by the lithography technique and their hysteresis loops with and without an electric field were measured by the anomalous Hall effect to study the effect of the electric field on the energy barrier of the magnetization switching of the ultra thin Co layer.