Study on localized surface plasmon resonance on III-nitride semiconduvtors in deep-UV region
Study on localized surface plasmon resonance on III-nitride semiconduvtors in deep-UV region
批准号:
25600090
负责人:
HIRAMATSU Kazumasa
金额:
$2.58万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2013
资助国家:
日本
项目状态:
已结题
起止时间:
2013-04-01 至 2015-03-31
中文摘要
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英文摘要
期刊论文(44)
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科研奖励(0)
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DOI:
10.7567/jjap.53.05fl09
发表时间:
2014-04
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[M. Katagiri;H. Fang;H. Miyake;K. Hiramatsu;H. Oku;H. Asamura;K. Kawamura]
通讯作者:
M. Katagiri;H. Fang;H. Miyake;K. Hiramatsu;H. Oku;H. Asamura;K. Kawamura
AlN Grown on a- and n-Plane Sapphire Substrates:by Low-Pressure Hydride Vapor Phase Epitaxy
在 a 面和 n 面蓝宝石衬底上生长 AlN:低压氢化物气相外延
DOI:
10.7567/jjap.52.08jb31
发表时间:
2013
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Naoki Goriki, Hideto Miyake, Kazumasa Hiramatsu, Toru Akiyama, Tomonori Ito, and Osamu Eryu]
通讯作者:
and Osamu Eryu
光学フィルタへの応用に向けた金属2次元回折格子構造の作製と光学特性評価
二维金属衍射光栅结构的制作及其应用于滤光片的光学性能评估
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[鬼頭壮宜, 元垣内敦司, 三宅秀人, 平松和政]
通讯作者:
平松和政
Surface treatment of GaN substrates by thermal cleaning
GaN衬底的热清洗表面处理
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume]
通讯作者:
O. Eryu and T. Hashizume
GaN growth on carbonized-Si substrate by MOVPE
通过 MOVPE 在碳化硅衬底上生长 GaN
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[K. Izumi, H. Miyake, K. Hiramatsu, H. Oku, H. Asamura and K. Kawamura]
通讯作者:
H. Asamura and K. Kawamura
共 38 条
Nano-void epitaxy of III-nitride semiconductors and controlling light emitting properties of deep-UV light
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批准号:24360008
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$12.4万
-
财政年份:2012
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra
-
批准号:21360007
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$11.65万
-
财政年份:2009
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Study on light emitting diode for lighting controlling the luminous intensity distribution by nano-photonics structures
-
批准号:18360008
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.15万
-
财政年份:2006
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负责人:HIRAMATSU Kazumasa
-
依托单位:
Controlling of UV light by using III-nitride based photonic crystals with nano-antenna
-
批准号:15360008
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.58万
-
财政年份:2003
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity
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批准号:11555094
-
项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$4.35万
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财政年份:1999
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负责人:HIRAMATSU Kazumasa
-
依托单位:
Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth Technique
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批准号:11450012
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.02万
-
财政年份:1999
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
海外基金