Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth Technique

选择性区域生长技术制备氮化物半导体埋入金属结构并降低位错密度

• 批准号: 11450012
• 负责人: HIRAMATSU Kazumasa
• 金额: $ 9.02万
• 依托单位: Mie University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1999
• 资助国家: 日本
• 起止时间: 1999 至 2001
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-11450012/
• 关键词: GaN; AlN; selective area growth; tungsten; tungsten nitride; Schottky junction; metal mask buried structure; air-bridge structure

A buried tungsten (W) structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window regions is excellent. GaN with a striped W metal pattern is easily decomposed above low temperature of 500 ℃ by the catalytic effect of W. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that employing an AlGaN/GaN underlying heterostructure with narrow W stripe mask width (L/S = 2/2 μm) leads the epilayer to be free from damage, resulting in a good W-buried structure.

采用低压金属有机物气相外延（LP-MOVPE）技术，通过横向外延生长（ELO）成功地获得了GaN埋钨（W）结构。窗口区GaN生长的选择性很好。在500 ℃以上的低温下，由于W的催化作用，具有条纹状W金属图案的GaN容易分解。掩埋W掩模是困难的，因为在掩模下的GaN外延层中发生严重的损伤。结果表明，采用窄W条掩模宽度（L/S = 2/2 μm）的AlGaN/GaN底层异质结构可以使外延层免受损伤，从而获得良好的W埋层结构。

项目成果

Kazumasa Hiramatsu et al.: "Effects of reactor pressure in MOVPE growth and fabrication of GaN dot structure using facet controlled technique"Proc. the fifth symposium on atomic-scale surface and interface dynamics. 101-104 (2001)

Kazumasa Hiramatsu 等人：“反应器压力对 MOVPE 生长和使用面控制技术制造 GaN 点结构的影响”Proc。

Kazumasa Hiramatsu et al.: "Fabrication and characterization of low defect density GaN using facet controlled epitaxial lateral overgrowth (FACELO)"Journal of Crystal Growth. 221. 316-326 (2000)

Kazumasa Hiramatsu 等人：“使用面控制外延横向过度生长 (FACELO) 制造低缺陷密度 GaN 的制造和表征”《晶体生长杂志》。

Hideto Miyake et al.: "Fabrication of GaN layer with Low Dislocation Density using Facet controlled ELO technique"Materials Research Society Symposium Proceedings. 639. G5.3.1-G5.3.6 (2001)

Hideto Miyake 等人：“使用 Facet 控制 ELO 技术制造具有低位错密度的 GaN 层”材料研究学会研讨会论文集。

Hideto Miyake et al.: "Fabrication and Optical Characterization of Facet-Controlled ELO (FACELO) GaN by LP-MOVPE"Physica Status Solidi(a). 188 No.2. 725-728 (2001)

Hideto Miyake 等人：“通过 LP-MOVPE 进行刻面控制 ELO (FACELO) GaN 的制造和光学表征”Physica Status Solidi(a)。

Hideto Miyake et al.: "Effects of reactor pressure on epitaxial lateral overgrowth of GaN via low-pressure metalorganic vapor phase epitaxy"Japanese Journal of Applied Physics. 38. L1000-L1002 (1999)

Hideto Miyake 等人：“通过低压金属有机气相外延，反应器压力对 GaN 外延横向过度生长的影响”日本应用物理学杂志。