Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth Technique

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A buried tungsten (W) structure with GaN is successfully obtained by epitaxial lateral overgrowth (ELO) technique via low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The selectivity of GaN growth on the window regions is excellent. GaN with a striped W metal pattern is easily decomposed above low temperature of 500 ℃ by the catalytic effect of W. It is difficult to bury the W mask because severe damage occurs in the GaN epilayer under the mask. It is found that employing an AlGaN/GaN underlying heterostructure with narrow W stripe mask width (L/S = 2/2 μm) leads the epilayer to be free from damage, resulting in a good W-buried structure.