Nano-void epitaxy of III-nitride semiconductors and controlling light emitting properties of deep-UV light
Nano-void epitaxy of III-nitride semiconductors and controlling light emitting properties of deep-UV light
批准号:
24360008
负责人:
HIRAMATSU Kazumasa
金额:
$12.4万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2012
资助国家:
日本
项目状态:
已结题
起止时间:
2012-04-01 至 2015-03-31
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Fabrication of AlGaN multiple quantum wells on sapphire with lattice-relaxation layer
具有晶格弛豫层的蓝宝石上 AlGaN 多量子阱的制备
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[Kazuhiro Nakahama, Fumitsugu Fukuyo, Hideto Miyake, Kazumasa Hiramatsu, Harumasa Yoshida, Yuji Kobayashi]
通讯作者:
Yuji Kobayashi
Stady on surface thermal stability of free-standing GaN substrates
自支撑式GaN衬底表面热稳定性研究
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[S. Okada, H. Miyake, K. Hiramatsu, R. Miyagawa, O. Eryu and T. Hashizume]
通讯作者:
O. Eryu and T. Hashizume
MOVPE法によるAlN成長におけるc面サファイア微傾斜角度の影響
c面蓝宝石微倾斜角对MOVPE法生长AlN的影响
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[鈴木周平, 林家弘, 三宅秀人, 平松和政, 福山博之]
通讯作者:
福山博之
Study of AlN growth conditions for hydride vapor phase epitaxy
氢化物气相外延AlN生长条件的研究
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[D. Yasui, H. Miyake, K. Hiramatsu and T. Kawamura]
通讯作者:
K. Hiramatsu and T. Kawamura
Selective Area Growth of Semipolar (20-21) and (20-2-1) GaN substrates by Metalorganic Vapor Phase Epitaxy
通过金属有机气相外延选择性区域生长半极性 (20-21) 和 (20-2-1) GaN 衬底
DOI:
10.7567/jjap.52.08jc06
发表时间:
2013
期刊:
Japanese Journal of Applied Physics
影响因子:
1.5
作者:
[Daiki Jinno, Bei Ma, Hideto Miyake, Kazumasa Hiramatsu, Yuuki Enatsu, and Satoru Nagao]
通讯作者:
and Satoru Nagao
共 88 条
Study on localized surface plasmon resonance on III-nitride semiconduvtors in deep-UV region
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批准号:25600090
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.58万
-
财政年份:2013
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra
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批准号:21360007
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.65万
-
财政年份:2009
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Study on light emitting diode for lighting controlling the luminous intensity distribution by nano-photonics structures
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批准号:18360008
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.15万
-
财政年份:2006
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负责人:HIRAMATSU Kazumasa
-
依托单位:
Controlling of UV light by using III-nitride based photonic crystals with nano-antenna
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批准号:15360008
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$8.58万
-
财政年份:2003
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity
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批准号:11555094
-
项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.35万
-
财政年份:1999
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负责人:HIRAMATSU Kazumasa
-
依托单位:
Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth Technique
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批准号:11450012
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$9.02万
-
财政年份:1999
-
负责人:HIRAMATSU Kazumasa
-
依托单位: