Controlling of UV light by using III-nitride based photonic crystals with nano-antenna

使用带有纳米天线的III族氮化物光子晶体控制紫外光

• 批准号: 15360008
• 负责人: HIRAMATSU Kazumasa
• 金额: $ 8.58万
• 依托单位: Mie University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 2003
• 资助国家: 日本
• 起止时间: 2003 至 2005
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-15360008/
• 关键词: III-nitride semiconductors; photonic crystals; nano antenna; ultraviolet light; gratings; electron beam lithography; reactive ion etching; AlGaN epitaxial growth; 窒化ガリウム; ナノ構造; 反射防止構造; 電子ビームリソグタフィ; 自然形成; 電子ビームリソグラフィ

Photonic crystals have the distribution of index which is as same as light wavelength or smaller than light wavelength. Its periodicity is able to control optical constant such as transmission, reflectance and absorption, or polarization. In this research, the fabrication of photonic crystas with III-nitride semiconductors, which is transparent for visible and ultraviolet and studied on light emitting devices or detectors, and the characteristics of transmission, reflectance, absorption and polarization are cleared. Furthermore, the effect of controlling of UV light is confirmed by UV detectors.Under the backgrounds and purposes, we obtained the following results.1. Fabrication of nanotips of GaN and SiO_2 by using reactive ion etching and controlling of visible light2. Fabrication of pyramid structure of Si by using reactive ion etching3. Fabrication of stripe structure of AlN and crystal growth of high quality AlGaN epitaxial layers4. Characterization of GaN and AlGaN UV detectors5. Fabrication of nano order pattern by using electron beam lithography6. Fabrication of gratings on polymer films by using electron beam lithography and plane light emitting of LEDBased on these results, we believe that high performance UV LED and UV detectors with controlling UV light can be realized.

光子晶体的折射率分布与光波长相同或小于光波长。它的周期性能够控制光学常数，如透射率、反射率和吸收，或偏振。本论文研究了在发光器件或探测器上用III-氮化物半导体制备对可见光和紫外光透明的光子晶体，以及光子晶体的透射率、反射率、吸收和偏振特性。此外，紫外光探测器对紫外光的控制效果也得到了证实。在此背景和目的下，我们取得了以下成果。反应离子刻蚀法制备GaN和SiO_2纳米针尖及可见光控制。反应离子刻蚀法制备硅金字塔结构3。AlN条状结构的制备及高质量AlGaN外延层的晶体生长GaN和AlGaN紫外探测器的特性5。利用电子束光刻技术制作纳米级图形6。基于这些结果，我们相信可以实现高性能的紫外光LED和控制紫外光的紫外光探测器。

项目成果

Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer

通过使用坚固的 AlN 外延层降低具有高 AlN 摩尔分数的 AlGaN 中的位错密度

• 发表时间: 2005
• 期刊: Material Research Society Symposium Proceedings Vol.831
• 作者: M.Hashimoto;A.Yanase;R.Asano;H.Tanaka;H.Bang;K.Akimoto;H.Asahi;Akira Ishiga
• 通讯作者: Akira Ishiga

Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360-10nm) using Synchrotron Radiation

使用同步辐射对具有宽检测波长范围 (360-10nm) 的 III 氮化物肖特基紫外探测器进行表征

• 发表时间: 2004
• 期刊: Mat.Res.Soc.Symp.Proc. 798
• 作者: A.Motogaito;K.Hiramatsu;Y.Shibata;H.Watanabe;H.Miyake;K.Fukui;Y.Ohuchi;K.Tadatomo;Y.Hamamura
• 通讯作者: Y.Hamamura

Enhance emission efficiency of InGaN films with Si doping

通过 Si 掺杂提高 InGaN 薄膜的发射效率

• 发表时间: 2006
• 期刊: Physica Status Solidi (C) (印刷中)
• 作者: S.Sugishita;A.Shoji;Y.Mukai;T.Nishiguchi;K.Michikami;T.Isshiki;S.Ohshima;Dabing Li
• 通讯作者: Dabing Li

n-type conductivity control of AlGaN with high Al mole fraction

高Al摩尔分数AlGaN的n型电导率控制

• 发表时间: 2006
• 期刊: Physica Status Solidi (c) (印刷中)
• 作者: H.Asahi;Y.K.Zhou;M.Hashimoto;M.S.Kim;X.J.Li;S.Emura;S.Hasegawa;Takuya Katsuno
• 通讯作者: Takuya Katsuno

ファセット制御技術による高品質窒化物半導体の作製

使用晶面控制技术制造高质量氮化物半导体

• 发表时间: 2006
• 期刊: 応用物理 第75巻 第4号
• 作者: S.Nishida;T.Yamanaka;S.Hasegawa;H.Asahi;三宅秀人
• 通讯作者: 三宅秀人