Controlling of UV light by using III-nitride based photonic crystals with nano-antenna
Controlling of UV light by using III-nitride based photonic crystals with nano-antenna
批准号:
15360008
负责人:
HIRAMATSU Kazumasa
金额:
$8.58万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (B)
财政年份:
2003
资助国家:
日本
项目状态:
已结题
起止时间:
2003 至 2005
中文摘要
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英文摘要
Photonic crystals have the distribution of index which is as same as light wavelength or smaller than light wavelength. Its periodicity is able to control optical constant such as transmission, reflectance and absorption, or polarization. In this research, the fabrication of photonic crystas with III-nitride semiconductors, which is transparent for visible and ultraviolet and studied on light emitting devices or detectors, and the characteristics of transmission, reflectance, absorption and polarization are cleared. Furthermore, the effect of controlling of UV light is confirmed by UV detectors.Under the backgrounds and purposes, we obtained the following results.1. Fabrication of nanotips of GaN and SiO_2 by using reactive ion etching and controlling of visible light2. Fabrication of pyramid structure of Si by using reactive ion etching3. Fabrication of stripe structure of AlN and crystal growth of high quality AlGaN epitaxial layers4. Characterization of GaN and AlGaN UV detectors5. Fabrication of nano order pattern by using electron beam lithography6. Fabrication of gratings on polymer films by using electron beam lithography and plane light emitting of LEDBased on these results, we believe that high performance UV LED and UV detectors with controlling UV light can be realized.
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Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer
通过使用坚固的 AlN 外延层降低具有高 AlN 摩尔分数的 AlGaN 中的位错密度
DOI:
--
发表时间:
2005
期刊:
Material Research Society Symposium Proceedings Vol.831
影响因子:
--
作者:
[M.Hashimoto, A.Yanase, R.Asano, H.Tanaka, H.Bang, K.Akimoto, H.Asahi, Akira Ishiga]
通讯作者:
Akira Ishiga
Characterization of III-nitride Based Schottky UV Detectors with Wide Detectable Wavelength Range (360-10nm) using Synchrotron Radiation
使用同步辐射对具有宽检测波长范围 (360-10nm) 的 III 氮化物肖特基紫外探测器进行表征
DOI:
--
发表时间:
2004
期刊:
Mat.Res.Soc.Symp.Proc. 798
影响因子:
--
作者:
[A.Motogaito, K.Hiramatsu, Y.Shibata, H.Watanabe, H.Miyake, K.Fukui, Y.Ohuchi, K.Tadatomo, Y.Hamamura]
通讯作者:
Y.Hamamura
Enhance emission efficiency of InGaN films with Si doping
通过 Si 掺杂提高 InGaN 薄膜的发射效率
DOI:
--
发表时间:
2006
期刊:
Physica Status Solidi (C) (印刷中)
影响因子:
--
作者:
[S.Sugishita, A.Shoji, Y.Mukai, T.Nishiguchi, K.Michikami, T.Isshiki, S.Ohshima, Dabing Li]
通讯作者:
Dabing Li
n-type conductivity control of AlGaN with high Al mole fraction
高Al摩尔分数AlGaN的n型电导率控制
DOI:
--
发表时间:
2006
期刊:
Physica Status Solidi (c) (印刷中)
影响因子:
--
作者:
[H.Asahi, Y.K.Zhou, M.Hashimoto, M.S.Kim, X.J.Li, S.Emura, S.Hasegawa, Takuya Katsuno]
通讯作者:
Takuya Katsuno
ファセット制御技術による高品質窒化物半導体の作製
使用晶面控制技术制造高质量氮化物半导体
DOI:
--
发表时间:
2006
期刊:
応用物理 第75巻 第4号
影响因子:
--
作者:
[S.Nishida, T.Yamanaka, S.Hasegawa, H.Asahi, 三宅秀人]
通讯作者:
三宅秀人
共 18 条
Study on localized surface plasmon resonance on III-nitride semiconduvtors in deep-UV region
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批准号:25600090
-
项目类别:Grant-in-Aid for Challenging Exploratory Research
-
资助金额:$2.58万
-
财政年份:2013
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Nano-void epitaxy of III-nitride semiconductors and controlling light emitting properties of deep-UV light
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批准号:24360008
-
项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$12.4万
-
财政年份:2012
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Creation of the modulated facet structures of III-nitride semiconductors and development of the white LEDs with wide and continuous wavelength spectra
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批准号:21360007
-
项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$11.65万
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财政年份:2009
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负责人:HIRAMATSU Kazumasa
-
依托单位:
Study on light emitting diode for lighting controlling the luminous intensity distribution by nano-photonics structures
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批准号:18360008
-
项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.15万
-
财政年份:2006
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
Development of New Electronic Emitters using GaN/AIN Super Lattice Structures with Negative Electron Affinity
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批准号:11555094
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项目类别:Grant-in-Aid for Scientific Research (B)
-
资助金额:$4.35万
-
财政年份:1999
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负责人:HIRAMATSU Kazumasa
-
依托单位:
Fabrication of Buried Metal Structure and Reduction of Dislocation Density for Nitride Semiconductors by Selective Area Growth Technique
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批准号:11450012
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$9.02万
-
财政年份:1999
-
负责人:HIRAMATSU Kazumasa
-
依托单位:
海外基金