Dopant-atom-controlled tunnel diodes using Si nano-pn junctions
Dopant-atom-controlled tunnel diodes using Si nano-pn junctions
批准号:
25630144
负责人:
TABE Michiharu
金额:
$2.58万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Challenging Exploratory Research
财政年份:
2013
资助国家:
日本
项目状态:
已结题
起止时间:
2013-04-01 至 2015-03-31
中文摘要
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英文摘要
期刊论文(74)
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Single-dopant Atom Devices for The Future of Nanoelectronics
纳米电子学未来的单掺杂原子器件
DOI:
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影响因子:
--
作者:
[Michiharu Tabe, Daniel Moraru, Earfan Hamid, Takeshi Mizuno]
通讯作者:
Takeshi Mizuno
静岡大学 電子工学研究所 田部道晴研究室
静冈大学电子研究所田部道晴实验室
DOI:
--
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--
作者:
[]
通讯作者:
KPFM observation of donors in transistor channels doped with different concentrations
不同浓度掺杂晶体管沟道中施主的KPFM观察
DOI:
--
发表时间:
2015
期刊:
影响因子:
--
作者:
[Krzysztof Tyszka, Daniel Moraru, Takeshi Mizuno, Ryszard Jablonski, Michiharu Tabe]
通讯作者:
Michiharu Tabe
Impact of Doping Concentration Regimes on Low-Temperature Tunneling in Nanoscale SOI-FETs
掺杂浓度制度对纳米级 SOI-FET 低温隧道效应的影响
DOI:
--
发表时间:
2014
期刊:
影响因子:
--
作者:
[Daniel Moraru, Yuuki Takasu, Takahiro Tsutaya, Arup Samanta, Le The Anh, Muruganathan Manoharan, Takeshi Mizuno, Hiroshi Mizuta, Michiharu Tabe]
通讯作者:
Michiharu Tabe
Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs
纳米级 SOI-MOSFET 施主态加深的实验和从头开始研究
DOI:
--
发表时间:
2013
期刊:
Transactions of the Materials Research Society of Japan
影响因子:
--
作者:
[Daniel Moraru, Earfan Hamid, Youhei Kuzuya, Takeshi Mizuno, Le The Anh, Hiroshi Mizuta, Michiharu Tabe]
通讯作者:
Michiharu Tabe
共 67 条
Toward room temperature operation of Si single-dopant devices by P and B codoping techniques
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批准号:22656082
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.34万
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财政年份:2010
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负责人:TABE Michiharu
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依托单位:
Si single-electron transfer devices using potential fluctuation by a few dopants
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批准号:20246060
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.87万
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财政年份:2008
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负责人:TABE Michiharu
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依托单位:
Nanoscale-multiple-junctions : Transport control and development of new functions
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批准号:18063010
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项目类别:Grant-in-Aid for Scientific Research on Priority Areas
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资助金额:$30.46万
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财政年份:2006
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负责人:TABE Michiharu
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依托单位:
Silicon single-electron devices : Time-space control of transport and development of new functions
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批准号:16106006
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$61.82万
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财政年份:2004
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负责人:TABE Michiharu
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依托单位:
Development of thermally-stable structures of thin SOI active layers
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批准号:12555087
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.27万
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财政年份:2000
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负责人:TABE Michiharu
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依托单位:
Fabrication and electron transport properties of two-dimensionally-coupled dots of single crystalline Si
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批准号:12450125
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.98万
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财政年份:2000
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负责人:TABE Michiharu
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依托单位:
ULTRA-SMALL LOCOS PROCESS FOR Si QUANTUM DOT FORMATION
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批准号:07455137
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$2.37万
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财政年份:1995
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负责人:TABE Michiharu
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依托单位: