ULTRA-SMALL LOCOS PROCESS FOR Si QUANTUM DOT FORMATION

用于硅量子点形成的超小型 LOCOS 工艺

• 批准号: 07455137
• 负责人: TABE Michiharu
• 金额: $ 2.37万
• 依托单位: SHIZUOKA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (B)
• 财政年份: 1995
• 资助国家: 日本
• 起止时间: 1995 至 1996
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-07455137/
• 关键词: silicon nitridation; silicon quantum dot; photoelectron spectroscopy; scanning tunneling microscopy

I have studied SiN nucleation on Si (111) 7x7 surface by thermal nitridation in vacuum and its masking effects against thermal oxidation for Si quantum dot formation. As oxidation conditions, etching mode oxidation in vacuum and film growth mode oxidation in a furnace were employed. As a result, following facts were found.1. The nitrides, of which the thickness is about 0.5nm, have strong immunity against etching mode oxidation, resulting Si pillar formation. The height linearly increases with oxidation time.2. The nitrides also work as oxidation masks for furnace-oxidation by taking the sample out of vacuum to the air. This result indicates that the proposed process is useful and effective in pillar and dot formation.3. The size and density of pillars are corresponding to those of SiN nuclei and nm-scale structure is obtained by nitridation in a relatively low temperature range of 600-650C.The next step is to apply this process to SOI substrates for fabricating Si dot arrays, which is being studied.

研究了真空热氮化SiN在Si（111）7 x7表面的成核及其对热氧化的掩蔽作用。作为氧化条件，采用真空中的蚀刻模式氧化和炉中的膜生长模式氧化。结果发现以下事实。厚度约为0.5nm的氮化物对蚀刻模式氧化具有很强的免疫力，导致Si柱形成。随着氧化时间的延长，膜层高度线性增加.氮化物也可以作为氧化掩模，通过将样品从真空中取出到空气中进行真空氧化。这一结果表明所提出的工艺是有用的和有效的柱和点的形成.在600- 650 ℃的较低温度范围内氮化，得到了与SiN核尺寸和密度相对应的纳米级结构。下一步，将该工艺应用于SOI衬底上，制备Si点阵，这一工作正在研究中。

项目成果

田部道晴: "Si清浄表面のN_2ガスによる熱窒化" 表面科学. 17・7. 19-24 (1996)

Michiharu Tabe：“用 N_2 气体进行硅清洁表面的热氮化”表面科学 17・7（1996）。

M.Tabe: "Nanometer scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridation" Applied Physics Letters. vol.69-15. 2222-2224 (1996)

M.Tabe：“利用氮化早期形成的氮化硅岛对硅进行纳米级局部氧化”《应用物理快报》。

田部 道晴: "Si清浄表面のN_2ガスによる熱窒化" 表面科学. 17・7. 19-24 (1996)

Michiharu Tabe：“用 N_2 气体进行硅清洁表面的热氮化”表面科学 17・7（1996）。

田部道晴: "Nanometer-scale local oxidation of silicon using silicon nitride islands formed in the early stages of nitridation" Applied Physics Letters. 69・15. 2222-2224 (1996)

Michiharu Tabe：“利用氮化早期形成的氮化硅岛对硅进行纳米级局部氧化”《应用物理快报》69・15（1996）。

M.Tabe: "Initial stages of nitridation of Si (111) surfaces : X-ray photoelectron spectroscopy and scanning tunneling microscopy studies" Surface Science. (to be published). (1997)

M.Tabe：“Si (111) 表面氮化的初始阶段：X 射线光电子能谱和扫描隧道显微镜研究”表面科学。