课题基金 / 基金详情

Nanoscale-multiple-junctions : Transport control and development of new functions

Nanoscale-multiple-junctions : Transport control and development of new functions
纳米级多结:传输控制和新功能的开发
批准号:
18063010
负责人:
TABE Michiharu
金额:
$30.46万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2009

项目摘要

项目成果

TABE Michiharu的其他基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
We have fabricated and studied multi-tunnel junctions SOI-MOSFETs by using donor potentials as quantum dots. As a result, 1) photons are detected as current level switching in random telegraph signal, 2) single-electron transfer in random potential landscape is realized, and 3) single dopant potentials in channel are detected by low-temperature Kelvin Probe Force Microscope.
期刊论文(157)
专著(0)
科研奖励(0)
会议论文
Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer
用于单电子转移的硅纳米结构中掺杂剂诱导的量子点阵列的设计
DOI: --
发表时间: 2008
期刊:
影响因子: --
作者: [M. Hiramatsu, M. Hori, Daniel Moraru]
通讯作者: Daniel Moraru
Single-Electron Devices:Interaction with Individual Dopants
单电子器件:与单个掺杂剂的相互作用
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [八木 岐諭・木下 基・宍戸 厚・山口 仁宏・吉田 善一・池田 富樹, Hideki Watanabe, 妹尾 達彦〔共著〕, Ayaho MIYAMOTO, K. Asakura, D. Moraru, 新宮 学〔共著〕, Ayaho MIYAMOTO, Kouhei Tsumoto, 樋口 直之・宍戸 厚・池田 富樹, 阪東恭子, Michiharu Tabe]
通讯作者: Michiharu Tabe
Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays
参数随机性对一维多隧道结阵列中量子化电子转移的影响
DOI: --
发表时间: 2007
期刊:
影响因子: --
作者: [D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, and M. Tabe]
通讯作者: and M. Tabe
Inter-Dopant Coupling Tuning for Single-Electron Transfer
单电子转移的掺杂剂间耦合调谐
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [山崎謙治, 山口浩司, D.Moraru]
通讯作者: D.Moraru
123
    Dopant-atom-controlled tunnel diodes using Si nano-pn junctions
    • 批准号:
      25630144
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.58万
    • 财政年份:
      2013
    • 负责人:
      TABE Michiharu
    • 依托单位:
    Toward room temperature operation of Si single-dopant devices by P and B codoping techniques
    • 批准号:
      22656082
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.34万
    • 财政年份:
      2010
    • 负责人:
      TABE Michiharu
    • 依托单位:
    Si single-electron transfer devices using potential fluctuation by a few dopants
    • 批准号:
      20246060
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $28.87万
    • 财政年份:
      2008
    • 负责人:
      TABE Michiharu
    • 依托单位:
    Silicon single-electron devices : Time-space control of transport and development of new functions
    • 批准号:
      16106006
    • 项目类别:
      Grant-in-Aid for Scientific Research (S)
    • 资助金额:
      $61.82万
    • 财政年份:
      2004
    • 负责人:
      TABE Michiharu
    • 依托单位: