Nanoscale-multiple-junctions : Transport control and development of new functions
Nanoscale-multiple-junctions : Transport control and development of new functions
批准号:
18063010
负责人:
TABE Michiharu
金额:
$30.46万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research on Priority Areas
财政年份:
2006
资助国家:
日本
项目状态:
已结题
起止时间:
2006 至 2009
中文摘要
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英文摘要
We have fabricated and studied multi-tunnel junctions SOI-MOSFETs by using donor potentials as quantum dots. As a result, 1) photons are detected as current level switching in random telegraph signal, 2) single-electron transfer in random potential landscape is realized, and 3) single dopant potentials in channel are detected by low-temperature Kelvin Probe Force Microscope.
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Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer
用于单电子转移的硅纳米结构中掺杂剂诱导的量子点阵列的设计
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[M. Hiramatsu, M. Hori, Daniel Moraru]
通讯作者:
Daniel Moraru
Single-Electron Devices:Interaction with Individual Dopants
单电子器件:与单个掺杂剂的相互作用
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[八木 岐諭・木下 基・宍戸 厚・山口 仁宏・吉田 善一・池田 富樹, Hideki Watanabe, 妹尾 達彦〔共著〕, Ayaho MIYAMOTO, K. Asakura, D. Moraru, 新宮 学〔共著〕, Ayaho MIYAMOTO, Kouhei Tsumoto, 樋口 直之・宍戸 厚・池田 富樹, 阪東恭子, Michiharu Tabe]
通讯作者:
Michiharu Tabe
Effects of parameter randomness on quantized-electron transfer in 1D multiple-tunnel-junction arrays
参数随机性对一维多隧道结阵列中量子化电子转移的影响
DOI:
--
发表时间:
2007
期刊:
影响因子:
--
作者:
[D. Moraru, Y. Ono, H. Inokawa, K. Yokoi, H. Ikeda, and M. Tabe]
通讯作者:
and M. Tabe
Inter-Dopant Coupling Tuning for Single-Electron Transfer
单电子转移的掺杂剂间耦合调谐
DOI:
--
发表时间:
2009
期刊:
影响因子:
--
作者:
[山崎謙治, 山口浩司, D.Moraru]
通讯作者:
D.Moraru
DOI:
--
发表时间:
2008
期刊:
影响因子:
--
作者:
[加藤真也, 椎葉充晴, 立川康人, 市川温, Michiharu Tabe]
通讯作者:
Michiharu Tabe
共 123 条
Dopant-atom-controlled tunnel diodes using Si nano-pn junctions
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批准号:25630144
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.58万
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财政年份:2013
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负责人:TABE Michiharu
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依托单位:
Toward room temperature operation of Si single-dopant devices by P and B codoping techniques
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批准号:22656082
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项目类别:Grant-in-Aid for Challenging Exploratory Research
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资助金额:$2.34万
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财政年份:2010
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负责人:TABE Michiharu
-
依托单位:
Si single-electron transfer devices using potential fluctuation by a few dopants
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批准号:20246060
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项目类别:Grant-in-Aid for Scientific Research (A)
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资助金额:$28.87万
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财政年份:2008
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负责人:TABE Michiharu
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依托单位:
Silicon single-electron devices : Time-space control of transport and development of new functions
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批准号:16106006
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项目类别:Grant-in-Aid for Scientific Research (S)
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资助金额:$61.82万
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财政年份:2004
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负责人:TABE Michiharu
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依托单位:
Development of thermally-stable structures of thin SOI active layers
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批准号:12555087
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.27万
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财政年份:2000
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负责人:TABE Michiharu
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依托单位:
Fabrication and electron transport properties of two-dimensionally-coupled dots of single crystalline Si
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批准号:12450125
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$6.98万
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财政年份:2000
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负责人:TABE Michiharu
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依托单位:
ULTRA-SMALL LOCOS PROCESS FOR Si QUANTUM DOT FORMATION
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批准号:07455137
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项目类别:Grant-in-Aid for Scientific Research (B)
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资助金额:$2.37万
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财政年份:1995
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负责人:TABE Michiharu
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依托单位: