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Development of thermally-stable structures of thin SOI active layers

薄 SOI 有源层热稳定结构的开发

基本信息

批准号：
12555087
负责人：
TABE Michiharu
金额：
$ 6.27万
依托单位：
Shizuoka University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555087/
关键词：
SOI MOSFET thermal agglomeration Si islands patterning シリコンアイランド化自己配列

项目摘要

In this work, thermal agglomeration phenomenon was studied for thin silicon-on insulator (SOI) layers in order to realize thermally-stable structures of SOI-MOSFETs.As the fundamental properties of the agglomeration phenomenon, the followings were typically found; (1) For (001) SOI layers, self-assembled Si islands aligned in the <310> directions are formed on the square region of the exposed SiO_2 layer, whose sides are almost parallel to the <110> directions. (2) Each of the islands is single-crystalline and surrounded by the facet planes. (3) Decreasing the SOI thickness, the islanding occurs at the lower temperature and smaller islands are formed with a higher density.According to the one-dimensional computer simulation, the ordered alignment of the islands is explained by the mechanism that the diffusion of surface Si atoms is enhanced due to the generation of the explained by the mechanism that the diffusion of surface Si atoms is enhanced due to the generation of the local distribution of surface chemical potential, or the sum of the strain and surface energies. Two-dimensional analysis is necessary for the entire understanding.Effect of the patterning the SOI layer was also studied. The patterning of the SOI layer causes the reduction of the onset temperature for the islanding, since the islanding preferentially occurs at the pattern edges. However, the islanding seems to be restrained for submicron-scale patterns, according to the preliminary experiment. Further studies on the patterning might lead to the thermally-stable SOI structures.

为了实现SOI MOSFET的热稳定结构，本文研究了薄绝缘体上硅（SOI）层的热团聚现象，发现其基本特征是：（1）对于（001）SOI层，<310>在暴露的SiO_2层的正方形区域上形成了沿方向排列的自组装Si岛，其边几乎与方向平行<110>; (2)每个岛都是单晶的，并被小平面包围。(3)随着SOI厚度的减小，在较低的温度下发生岛化，形成的岛更小，密度更高。根据一维计算机模拟，岛的有序排列由表面Si原子的扩散由于局部的产生而增强的机制解释，表面化学势的分布，或应变和表面能的总和。二维分析是必要的整个理解。图形化的SOI层的影响也进行了研究。SOI层的图案化导致岛化的起始温度的降低，因为岛化优先发生在图案边缘。然而，根据初步实验，对于亚微米尺度的图案，孤岛化似乎受到抑制。进一步的图形化研究可能会导致热稳定的SOI结构。