Si single-electron transfer devices using potential fluctuation by a few dopants

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In this work, the following results have been obtained.(1) Even under existence of many phosphorous donors, a single donor determines sub-threshold characteristics.(2) In a device, where three phosphorous atoms determine the sub-threshold characteristics, single-electron transfer has been demonstrated.(3) By low-temperature Kelvin probe force microscopy, individual charged donors and acceptors were observed, and then potential change due to electron injection into the dopant was observed.