Point Defects in Ge-doped SiO_2 Glass-Their Structures and Roles in Nonlinear Optical Effects

掺Ge SiO_2 玻璃中的点缺陷——其结构及其在非线性光学效应中的作用

• 批准号: 06452222
• 负责人: OHKI Yoshimichi
• 金额: $ 4.74万
• 依托单位: Waseda University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-06452222/
• 关键词: Ge-doped silica; Silica; SiO_2; Point Defect; Excimer Laser; Photorefractive Effect; Optical Fiber; Grating; 光励起欠陥

(1) The generation mechanism of the absorption changes, which cause a photorefractive change through the Kramers-Kronig relation in Ge-doped SiO_2 glass, has not been clarified yet. In the present paper, we examined the laser-power dependence of the absorption changes around 5 eV,induced by a KrF excimer laser. The induced absorption around 5 eV is composed of three different components, centering at 4.50,5.08, and 5.80 eV.The increasing behavior of each absorption component depends strongly on the energy density. The three absorption components reach different saturation levels, depending on the energy density. Furthermore the absorption induced by a high-power KrF excimer laser is bleached by a laser, the energy density of which is about one-twentieth of the inducing laser. Combining the results of mathematical analysis, it was found that a two-photon process and a one-photon process are, respectively, involved with the induction and the bleach of each absorption. It was also found t … More hat the precursor defects, which causes the absorption change, is of an oxygen-deficient type.(2) Optical absorption change in the microsecond order in oxygen-deficient Ge-doped silica glass was measured as a function of time just after photon irradiation from a KrF excimer laser. The absorption above 3 eV was found to decay with the same time constant as that of the luminescence at 3.1 eV.From this, it is confirmed that the observed absorption change is due to the excitation of electrons from the lowest excited triplet state to an upper state.(3) Defects in buried SiO_2 films in Si formed by implantation of oxygen ions were characterized by photoluminescence (PL) excited by KrF (5.0 eV) excimer laser and synchrotron radiation. Two PL bands were observed at 4.3 and 2.7 eV.The 4.3 eV band has two PL excitation bands at 5.0 and 7.4 eV,and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy. Through the change in the PL intensity with the film thickness, the buried SiO_2 film is considered to contain the oxygen vacancy defects in a high amount throughout the oxide. Less

（1）尚未阐明有损变化的生成机制，这些变化通过GE掺杂的SIO_2玻璃中的Kramers-Kronig关系引起光赋予性变化。在本文中，我们研究了由KRF准分子激光引起的5 eV损耗变化的激光功率依赖性。诱导的损耗在5 eV附近是由三个不同组成部分组成，居中为4.50,5.08和5.80 eV。每个吸收成分的行为增加在很大程度上取决于能量密度。根据能量密度，这三个吸收成分达到不同的饱和水平。此外，由高功率KRF准分子激光器诱导的吸收成分被激光漂白，其能量密度约为诱导激光的20世纪。结合了数学分析的结果，发现一个两光子的过程和一个单光过程分别与每种滥用的诱导和漂白剂有关。还发现……更大的效果是导致荒谬变化的前体缺陷，是氧气缺陷类型的。（2）在微秒级的氧气缺陷型二氧化硅玻璃中，在krf impimer empimer hearadiation之后，在微秒级的氧气缺陷型二氧化硅玻璃中以时间的速度测量了光学意外变化。 The absurdition above 3 eV was found to decay with the same time constant as that of the luminescence at 3.1 eV.From this, it is confirmed that the observed abstraction change is due to the excitement of electrons from the lowest excited triplet state to an upper state.(3) Defects in built SiO_2 films in Si formed by implantation of oxygen ions were characterised by photoluminescence (PL) excited by KrF (5.0 EV）准分子激光和同步辐射。在4.3和2.7 eV处观察到两个PL频段。4.3eV频段在5.0和7.4 eV时具有两个PL激发谱带，其衰减时间为5.0 eV兴奋的4.0 ns，对于7.4 eV兴奋而言，其衰减时间为2.4 ns。发现2.7 EV PL带的衰减时间为9.7 ms。这些结果与4.3 eV和2.7 eV PL波段的结果非常相似，这些结果在缺氧类型的散装二氧化硅玻璃中观察到，并归因于氧空位。通过膜厚度的PL强度的变化，内置的SIO_2膜被认为包含整个氧化物中高量的氧空位缺陷。较少的

项目成果

藤巻真、八木幹太、大木義路、西川広之、栗津浩一、牟田健一、加藤真基重: "“Ge ドープ SiO_2ガラスにおけるKrFエキシマレーザ誘起光吸収のレーザパワー依存性"" 第55回応用物理学会学術講演会(1994年9月21日).

Makoto Fujimaki、Kanta Yagi、Yoshichi Oki、Hiroyuki Nishikawa、Koichi Kuritsu、Kenichi Muta、Makishige Kato：““KrF准分子激光诱导光吸收在Ge掺​​杂SiO_2玻璃中的激光功率依赖性”第55届应用物理学术会议（9月21日， 1994）。

Kwang Soo Seol, Akihito Ieki, Yoshimichi Ohki, Hiroyuki Nishikawa, and Masaharu Tochimori: "Photoluminescence study on defects in buried SiO_2 film formed by implantation of oxygen" Journal of Applied Physics. 79. 412-416 (1996)

Kwang Soo Seol、Akihito Ieki、Yoshimichi Ohki、Hiroyuki Nishikawa 和 Masaharu Tochimori：“氧注入形成的掩埋 SiO_2 薄膜缺陷的光致发光研究”应用物理学杂志。

Makoto Fujimaki, Yoshimichi, Hiroyuki Nishikawa, Koichi Awazu, and Kenichi Muta: "Optical Absorption and Photoluminescence of Defect in Germanium-doped Silica Glass" Materials Research Society Fall Meeting (Nov.30,1994).

Makoto Fujimaki、Yoshimichi、Hiroyuki Nishikawa、Koichi Awazu 和 Kenichi Muta：“掺锗石英玻璃缺陷的光吸收和光致发光”材料研究学会秋季会议（1994 年 11 月 30 日）。

藤巻真、八木幹太、大木義路、西川広之、栗津浩一、牟田健一、加藤真基重: "“Ge ドープ SiO_2ガラスにおけるKrFエキマレーザ誘起吸収のフォトブリーチ"" 第56回応用物理学会学術講演会(1995年8月27日).

Makoto Fujimaki、Kanta Yagi、Yoshimichi Oki、Hiroyuki Nishikawa、Koichi Kuritsu、Kenichi Muta、Makishige Kato：““Ge 掺杂 SiO_2 玻璃中 KrF 准分子激光诱导吸收的光漂白””第 56 届日本应用物理学会学术会议（8 月 27 日） ，1995）。

Hiroyuki Nishikawa and Yoshimichi Ohki: "“Paramagnetic defect centers induced by excimer lasers,γ rays,and mechanical fracturing in amorphous SiO_2"" Dfect and Diffusion Forum. 123-124. 123-134 (1995)

Hiroyuki Nishikawa 和 Yoshimichi Ohki：“准分子激光、γ 射线和非晶 SiO_2 中的机械断裂引起的顺磁缺陷中心”缺陷与扩散论坛。123-124。123-134 (1995)