Defects in pure-silica glass: study on non-radical defects and development of optical fibers for adverse environments.

对1.9 eV（红色）发射的光致测量被传送到射线辐射的高纯度硅胶玻璃。4.8-eV吸收和1.9-eV吸收的4.8-eV吸收的时间衰减在两个不同的defect站点上出现，以及两个defect站点之间的能量转移。与电子自旋共振观测相比，认为对1.9-eV发光是一个非桥接氧洞中心（NBOHC： Si-O·）的负责任的建议。4.8-eV吸收带增加，当样本在氧大气层prior到辐照时，建议对负责任的物质与某些形式的超量氧有关。缺陷被暂时识别为负电荷的非桥接氧（ Si-O^-），当一个过氧化连接陷阱a-诱导的电子、Si-O-Si + e^- Si-O^- + ·O-Si两者都有缺陷的责任，对4.8-eV吸收必须存在于玻璃杯对4.8-eV波段激发的1.8-eV发光。

Photoluminescence measurements of the 1.9-eV (red) emission were carried out on high-purity silica glasses subjected to -ray irradiation. The time decay of the 4.8-eV-excited-luminescence indicates that the 4.8-eV absorption and the 1.9-eV luminescence arise at two different defect sites, and that an energy transfer occurs between the two defects. comparison with electron spin resonance observations suggests that the defect responsible for the 1.9-eV luminescence is the non-bridging oxygen hole center (NBOHC: Si-O・). The 4.8-eV absorption band increases when the sample is heated in an oxygen atmosphere prior to -irradiation, suggesting that the defect responsible is related to some form of excess oxygen. The defect is tentatively identified as a negatively charged non-bridging oxygen ( Si-O^-) which is formed when a peroxy linkage traps a -induced electron, Si-O-O-Si + e^- Si-O^- + ・O-Si .Both the NBOHC and the defect responsible for the 4.8-eV absorption must be present in the glass for the 4.8-eV band excited 1.8-eV luminescence to occur.