Defects in pure-silica glass: study on non-radical defects and development of optical fibers for adverse environments.

纯石英玻璃的缺陷：非自由基缺陷的研究和恶劣环境下光纤的开发。

• 批准号: 62460121
• 负责人: OHKI Yoshimichi
• 金额: $ 4.16万
• 依托单位: WASEDA UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (B)
• 财政年份: 1987
• 资助国家: 日本
• 起止时间: 1987 至 1988
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-62460121/
• 关键词: High-purity silica glass; Defects; Absorption; 光ルミネッセンス; 光ファイバ; 石英ガラス; 光吸収帯; 水素拡散; 耐放射線特性; ノンストイキオメトリ

Photoluminescence measurements of the 1.9-eV (red) emission were carried out on high-purity silica glasses subjected to -ray irradiation. The time decay of the 4.8-eV-excited-luminescence indicates that the 4.8-eV absorption and the 1.9-eV luminescence arise at two different defect sites, and that an energy transfer occurs between the two defects. comparison with electron spin resonance observations suggests that the defect responsible for the 1.9-eV luminescence is the non-bridging oxygen hole center (NBOHC: Si-O・). The 4.8-eV absorption band increases when the sample is heated in an oxygen atmosphere prior to -irradiation, suggesting that the defect responsible is related to some form of excess oxygen. The defect is tentatively identified as a negatively charged non-bridging oxygen ( Si-O^-) which is formed when a peroxy linkage traps a -induced electron, Si-O-O-Si + e^- Si-O^- + ・O-Si .Both the NBOHC and the defect responsible for the 4.8-eV absorption must be present in the glass for the 4.8-eV band excited 1.8-eV luminescence to occur.

用光致发光方法测量了高纯二氧化硅玻璃的1.9 eV红光辐射。4.8 eV激发发光的时间衰减表明，4.8 eV吸收和1.9 eV发光出现在两个不同的缺陷位置，两个缺陷之间发生了能量转移。与电子自旋共振观测结果的比较表明，导致1.9 eV发光的缺陷是非桥氧空穴中心(NBOHC：Si-O·)。当样品在辐照前在氧气气氛中加热时，4.8 eV的吸收带增加，这表明导致缺陷的原因与某种形式的过剩氧有关。该缺陷被初步确定为带负电的非桥氧(Si-O^-)，它是由一个过氧键捕获a诱导的电子Si-O-O-Si+e^-Si-O^-+·O-Si形成的。NBOHC和导致4.8 eV吸收的缺陷都必须存在于玻璃中，才能产生4.8 eV能带激发的1.8 eV发光。

项目成果

R.Tohmon;Y.Shimogaichi;H.Mizuno;Y.Ohki;K.Nagasawa;Y.Hama: Physical Review Letters.

R.Tohmon；Y.Shimogaichi；H.Mizuno；Y.Ohki；K.Nagasawa；Y.Hama：物理评论快报。

K.Nagasawa.;H.Mizuno.;Y.Yamasuka.;R.Tohomon.;Y.Ohki.;Y.Hama: "The Physics and Technology of Amorphous" Plenum Press, 1988 (SiO 2)

K.Nagasawa.;H.Mizuno.;Y.Yamasuka.;R.Tohomon.;Y.Ohki.;Y.Hama：“非晶的物理和技术”Plenum Press，1988 (SiO 2)

R.Tohmon; Y.Shimogaichi; H.Mizuno; Y.Ohki; K.Nagasawa; Y.Hama.: "2.7eV luminescence in as-manufactured high-purity silica glass" Physical Review Letters.

R.托蒙；

R.Tohmon;Y.Yamasaka;K.Nagasawa;Y.Ohki;Y.Hama: Journal of Non-Gystalline Solids. 95&96. 671-678 (1987)

R.Tohmon；Y.Yamasaka；K.Nagasawa；Y.Ohki；Y.Hama：非晶体固体杂志。

K.Nagasawa;H.Mizuno;Y.Yokomachi;R.Tohmon;Y.Ohki;Y.Hama: "The Physics and Technology of Amorphous SiO2(edited by R.A.B.Devine)" Plenum Press, 193-198 (1988)

K.Nagasawa;H.Mizuno;Y.Yokomachi;R.Tohmon;Y.Ohki;Y.Hama：“非晶 SiO2 的物理和技术（由 R.A.B.Devine 编辑）” Plenum Press，193-198 (1988)